• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.812-817
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• 2002

• Progress in Superconductivity
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• v.5 no.2
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Journal of the Korean institute of surface engineering
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• v.41 no.3
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• pp.88-93
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• 2008

Ir-Re thin films with Ti interlayer were deposited onto the tungsten carbide substrate by ion beam assisted DC magnetron sputtering. The Ir-Re films were prepared with targets of having two atomic percent of 7:3 and 5:5. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Ir-Re thin film also were examined. The interlayer of pure titanium was formed with 100 nm thickness. The film growth of Ir-30at.%Re was faster than that of Ir-50at.%Re in the same deposition conditions. Ir-Re thin films consisted of dense and columnar structure irrespective of the different target compositions. The values of hardness and adhesion strength of Ir-30at.%Re thin film coated on WC substrate were higher than those of Ir-50at.%Re thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.448-449
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• 2006

For the possible applicative pearl pigment, multi-layered $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ thin film was deposited on glass substrate by using sputtering method. $TiO_2$ and Al or Cr was selected as a possible high and low refraction materials at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ layers show the wavelength range of 430 - 760nm, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well matched with the experimental one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.761-763
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• 1998

In this paper, Co-Cr thin films which are known for a excellent perpendicular magnetic recording media were prepared. Changing target- substrate distance, Ar gas pressure and arriving atoms, the incident angle and c-axis orientation properties by using the facing targets sputtering system. We evaluated the c-axis dispersion angle by measu ring half-height width with Micro area X-Ray Diffractometer, measured the thickness of thin film with Ellipsometer. The magnetic properties were compared measuring in-plane squareness and perpendicular coercivity with vibrating sample Magnetometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1320-1322
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• 1997

The distribution of coercivity in the thickness direction were investigated by using Kerr hysteresis loop tracer for the Co-Cr films deposited by Facing Targets Sputtering apparatus. It $H_{c{\bot}}(S)- H_{c{\bot}}(I)$ correlated strongly with ${\Delta}H_c$, which represents the degree of distribution of coercivity. Furthermore, the Cr content was varied in order to improve the coercivity of intial growth layer $H_{c{\bot}}(I)$ took a maximum value of 750 Oe and the distribution of coercivity became sharper at the Cr content of 25 at.%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.47-48
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• 2007

본 실험에서는 MgO (99.999%)와 ZnO (99.999%)의 두가지 타겟을 사용한 RF co-스퍼터링법을 이용하여 p-type Si (100) 기판 위에 $Zn_{1-x}Mg_xO$ 박막을 증착 하였다. ZnO 타겟의 RF-power은 고정시키고 MgO 타겟의 RF-power를 조절함으로써 Mg 함량을 조절하였다. EDX분석을 통해 MgO RF-power의 증가에 따라 고용되는 Mg의 함량이 증가함을 알 수 있었다. 또한 MgZnO내 Mg 함량이 높아짐에 따라 c-축 격자상수가 감소하는 것을 XRD분석을 통해 알 수 있었고, MgO기반의 2차상은 형성되지 않았다. PL 측정을 통해 Mg함량이 증가 할수록 UV 영역의 파장의 강도는 감소하고 UV 파장의 위치는 blueshift되는 것을 관찰 할 수 있었다.