• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.256-262
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• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.208-214
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• 1993

In order to investigate the origin of an increase in the coercivity with the Ta addition to Co-Cr films, the perpendicular magnetic anisotropy of Co-Cr film and CoCrTa film was measured by a torque magnetometer and VSM. In Co-Cr binary alloy film, the uniaxial anisotropy increased with increasing Cr content. The perpendicular magnetic anisotropy of $Co_{81.7}Cr_{16.7}Ta_{1.6}$ film was larger than that of $Co_{81}Cr_{19}$ film, both of which were deposited at the same substrate temperature of $100^{\circ}C$. The change in the perpendicular magnetic anisotropy with annealing was studied to understand the Ta addition effect. The amount of decrease in perpendicular magnetic anisotropy of the CoCrTa film by the annealing was larger than that of Co-Cr film. And the perpendicular magnetic anisotripies of Co-Cr film and CoCrTa film after annealing were almost the same. The cause of this was interpretated as the enhanced segregation of solute atoms in the Ta added thin film in the as-deposited state. The enhanced segregation of solute atoms increases the perpendicular magnetic anisotropy of the film, and causes the increase of perpendicular coercivity of the film.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.221-228
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• 1993

The general requirements of recording media include recording performance, environmental stability, runnability on the drive or deck, and manufacturability. CoCrMo thin films were prepared using RF sputtering system for a study on chemical stability. Surface degradation of the CoCrMo thin film was studied by SEM, XPS and AES. Surface degradation was found to be dependent of sputtering condition and Mo content. Addition of Mo to CoCr thin film improved dramatically its surface degradation resistance in dilute sulfuric acid, as indicated by active-passive transition appeared in electrochemical polarization curve. Futhermore, the passive current density was decreased with increasing Mo content. The reduction in a number density of corrosion sites by Mo addition vms observed, after accelerated corrosion test. AES survey indicated that corrosion occured on the site with Cr depletion and highly concentrated chloride ions.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.215-220
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• 1993

Microstructural dependence of magnetic property of RF/DC sputtered $Co_{69.0}Ni_{18.5}Cr_{12.5}/Cr$ double layer thin film was studied. Grain size was found to be decreased with substrate temperature in the range of $100-200^{\circ}C$ and Cr underlayer thickness(from $500\;{\AA}-2000\;{\AA}$). The peaks (200) and (1120) of X-ray diffraction patterns were evidently grown with the substrate temperature for the Cr underlayer and magnetic layer, respectively. The CoNiCr magnetic layer was found to be well epitaxialy grown on Cr underlayer, and subsequently the coercivity was enhanced.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.45-50
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• 1994

CoCr 박막에 있어서 C축 결정배향성과 미세구조 변화에 대한 Co73Cr27 씨앗층의 영향이 조사되 었다. 기록밀도가 높고 재생전압도 높은 CoCr 수직기록매체를 개발하기 위해서는 CoCr층의 두께가 엷 으면서 결정배향성이 우수하고 결정립 크기가 적고 균일한 자성기록막 제조가 필요하다. CoCr 단층막 또는 CoCr/퍼말로이 이중막 제조에서 500$\AA$정도의 Co73Cr27 층을 씨앗층으로 만들어 줌으러써 기록층인 CoCr 박막이 $0.2mu$m의 두께에서도 천이층이 거의 없고 결정배향성이 우수한 자성막을 제조할 수 있었 다. 또한 Co73Cr27 씨앗층은 비록 결정립 크기는 증가시켰지만 기록층의 에피택시 성장에 보다 바람직 한 것으로 조사되었다.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.203-209
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• 1999

Effects of Mo and Si addition in Cr underlayer on magnetic properties of CoCrTa/CrMo and CoCrTa/Si thin films media were investigated. Thin films were prepared with DC magnetron sputtering system. The thickness of CoCrTa magnetic layer and Cr underlayer were fixed at 300 $\AA$ and 700 $\AA$, respectively. The substrate heating temperature was kept constant at 26$0^{\circ}C$ for both magnetic layer and underlayer preparation. The coercivity increase of CoCrTa film was realized due to Mo addition in Cr underlayer. Si addition made a small decrease in coercivity. Coercivity increase seems to be attributed by the improvement of preferred orientation of Cr(200) plane. It is found that lattice fit between Cr(200) and CoCrTa(1120) of CrMo underlayer is better than that of CrSi underlayer. This small misfit may also contribute coercivity increase.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.26-30
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• 1999

Sputter deposited Co-Cr thin films been developed continuously as one of the major candidates for high density recording media. In this study, Co-26at%Cr thin films with c-axis oriented normal to substrate surface were prepared by a improved facing targets sputtering system. We find that the effect of microstructural changes of the sputtered Co-Cr thin films on magnetic properties and changes of crystal orientation due to the variation of substrate temperature.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.94-98
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• 2002

Sputtering conditions and various underlayer such as Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo and Hf were investigated for coercivity enhancement of 20 nm Ti/CoCrPt thin films in order to increase the coercivity of the films thinner than 20 nm. Among them, Ag and Mg were effective to increase the coercivity. Particularly 2 nm Ag was very effective to increase the coercivity and nucleation field as well as to reduce ${\alpha}$ value in CoCrPt thin film such that the coercivity of 2 nm Ag/18 nm Ti/10 nm CoCrPt film was 2200 Oe. However, it seemed that other coercivity enhancement mechanism operated in CoCrPt films because Ti (002) preferred texture was not developed with Ag underlayer contrary to a general expectation. And the coercivity and nucleation field were decreased when glass substrate with rougher surface was used.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.314-319
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• 1993

The Effects of additional element X (X = Si, Mo, Cu, Gd) on magnetic properties and microstructure of Co-1Zat%Cr-Zat%Ta/Cr-X magnetic thin film were investigated. The thickness changes of Cr-X underlayer and CoCrTa magnetic layer were in the range of $1000~2000\AA$ and $200~800\AA$. respectively. Substrate temperatures were controlled from $100^{\circ}C$ to $200^{\circ}C$. Increase of coercivity by about 100~200 Oe was observed in CoCrTa/Cr-X thin films compared to those without additional X element. Cu was the most effective additional element for increasing coercivity. CoCrTa/Cr-Cu thin film shows relatively high coercivity in $1500\AA$ underlayer thickness and $600\AA$ magnetic layer thickness.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.69-75
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• 1997

Thin films of $Si0_2(1000{\AA})/CoNiCr(400{\AA})/Cr$ were fabricated as a function of Cr thickness by KF magnetron sputtering. The saturation magnetization, coercive force and squareness with annealing temperature for these films were investigated. The values of saturation magnetization of $SiO_2/CoNiCr/Cr$ thin films decreased as the thickness of Cr underlayer increased, whereas coercive force increased as the thickness of Cr underlayer increased. The value of Ms was 600 emu/cc and the maximum value of Hc was 550 Oe. Especially, the value of saturation magnetization was rapidly decreased $SiO_2/CoNiCr/Cr(1700{\AA})$ thin films as the annealing temperature increased And the coercive force increased as the annealing temperature increased When annealing temperature was $650^{\circ}C$, the Ms was reduced to 90 % of the as-deposited film. And the Hc was showed maximum 1600 Oe. It was thought that Cr diffusion into CoNiCr layer reduced the magnetic moment of CoKiCr layer. In addition. Hc might he increased due to grain growth perpendicular to the film plane.