• Title/Summary/Keyword: Co film

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Efficacy of In-Ovo Vaccination against Marek's Disease in Commercial Broiler (마렉백신의 In-Ovo 접종에 따른 육계에서의 효능 평가)

  • Um, H.J.;Won, M.Y.;Lee, D.W.;Go, D.W.;Mo, I.P.
    • Korean Journal of Poultry Science
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    • v.33 no.4
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    • pp.295-301
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    • 2006
  • This study has been designed to evaluate the efficacy of MD in-ovo vaccination in broiler and to find the contamination level of MD virus in broiler farms. A nested PCR test was used to find the level of filed contamination of pathogenic MD virus in the commercial broiler farms. The positive rate of farms contaminated with pathogenic MD virus was 26.09%. And to evaluate the efficacy of MD vaccination, performance factors such as the mortality, feed conversion rate and body weight at market age has been recorded and compared among farms. There was no difference on these factors between vaccinated and non-vaccinated farms except performance. We need further investigation of the film with low performance index. The B/B ratio, which is common index for the evaluation of bursal changes, was calculated and compared between vaccinated and non-vaccinated group There were significant decreases of B/B ratio in the both group without any statistical difference between groups. The reason of decreased bursal size may be due to other infection such as IBD. From this study, we can know that the contamination rate of fm with pathogenic MD virus was very low and not different from previous study. However, the difference of the contamination rate in different locations recommends periodical monitoring on these areas.

Effect of Post-annealing on the Interfacial adhesion Energy of Cu thin Film and ALD Ru Diffusion Barrier Layer (후속 열처리에 따른 Cu 박막과 ALD Ru 확산방지층의 계면접착에너지 평가)

  • Jeong, Minsu;Lee, Hyeonchul;Bae, Byung-Hyun;Son, Kirak;Kim, Gahui;Lee, Seung-Joon;Kim, Soo-Hyun;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.7-12
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    • 2018
  • The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

Growth Model of Common Ice Plant (Mesembryanthemum crystallinum L.) Using Expolinear Functions in a Closed-type Plant Production System (완전제어형 식물 생산 시스템에서 선형 지수 함수를 이용한 Common Ice Plant의 생육 모델)

  • Cha, Mi-Kyung;Kim, Ju-Sung;Cho, Young-Yeol
    • Horticultural Science & Technology
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    • v.32 no.4
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    • pp.493-498
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    • 2014
  • The objective of this study was to make growth and yield models for common ice plant (Mesembryanthemum crystallinum L.) using expolinear functional equations in a closed-type plant production system. Three-band radiation type fluorescent lamps with a 12-hours photoperiod were used, and the light intensity was $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. Nutrient film systems with three layers were used for plant growth. Environmental conditions, such as air temperature, relative humidity and $CO_2$ concentration were controlled by an ON/OFF operation. Leaf area, shoot fresh and dry weights, light use efficiency of common ice plant as function of days after transplanting, accumulative temperature and accumulative radiation were analyzed. Leaf area, shoot fresh and dry weights per area were described using an expolinear equation. A linear relationship between shoot dry and fresh weights was observed. Light use efficiency of common ice plant was $3.3g{\cdot}MJ^{-1}$ at 30 days after transplanting. It is concluded that the expolinear growth model can be a useful tool for quantifying the growth and yield of common ice plant in a closed plant production system.

Isolation, Identification and Antagonisms of Rhizospheric Antagonists to Cucumber Wilt Pathogen, Fusarium oxysporum f. sp. cucumerinum Owen (오이 덩굴쪼김병균에 대한 오이 근권길항미생물의 분리, 동정 및 길항작용)

  • Jee Hyeong Jin;Kim Hee Kyu
    • Korean Journal Plant Pathology
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    • v.3 no.3
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    • pp.187-197
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    • 1987
  • Bacteria and fungi antagonistic to Fusarium oxysporum f. sp. cucumerinum Owen were effectively isolated with each of modified Triple Layer Agar (TLA) technique from rhizosphere soil where cucumber had been grown healthily in plastic film house. Three predominant bacterial isolates selected were identified as Pseudomonas fluorescens, and P. putida, Serratia sp. and three fungal isolates were Gliocladium sp. Trichoderma harzianum, and T. viride. Antagonistic bacteria inhibited $26-45\%$ of germination and $41-56\%$ of germ tube elongation of microconidia of F. oxysporum f. sp. cucumerinum on Water Agar (WA). P. fluorescens was the strongest inhibitor. Several my co parasitisms were observed on dual culture of WA between antagonistic fungi and F. oxysporum f. sp. cucumerinum such as coiling, penetration, overgrowing, and lysis. Mycelial lysis of the pathogen was the most severe at pH 4.6, followed by 3.6, 5.6 and 6.6 of the medium in decreasing order. At pH 6.6, mycelia of the pathogen were not conspicuously damaged, however, the antagonistic fungi formed abundant chlamydospores especially Gliocladium sp. T. harzianum revealed the most excellent antagonism in vitro.

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Growth of SiC Oxidation Protective Coating Layers on graphite substrates Using Single Source Precursors

  • Kim, Myung-Chan;Heo, Cheol-Ho;Park, Jin-Hyo;Park, Seung-Jun;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.122-122
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    • 1999
  • Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

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Preparation of Activated Carbon Fiber-Ceramic Composites and Its Physical Properties (활성탄소섬유-세라믹복합체의 제조 및 물성)

  • 이재춘;박민진;김병균;신경숙;이덕용
    • Journal of the Korean Ceramic Society
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    • v.34 no.1
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    • pp.56-62
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    • 1997
  • The PAN (Polyacrylonitrile) based carbon fiber-ceramic composites (CFCC) were prepared from mixtures of short carbon fibers, phenolic resin and ceramic binder. The effects of carbonization temperature of a pre-cursor fiber, the stabilized PAN fiber, on the specific surface area and the bending strength of the activated CFCC were studied in this work. The precursor fiber was carbonized at 80$0^{\circ}C$ and 100$0^{\circ}C$, respectively. The CFCC were activated at 85$0^{\circ}C$ in carbon dioxide for 10~90 minutes. As the burn-off of the activated CFCC made of the precursor fiber carbonized at 80$0^{\circ}C$ was increased from 37% to 76%, the specific surface area in-creased from 493m2/g to 1090m2/g, and the bending strength decreased from 4.5MPa to 1.4MPa. These values were about two times larger than those of the activated CFCC of which precursor fiber was car-bonized at 100$0^{\circ}C$. The effects of carbonization temperature of a precursor fiber on the specific surface area and bending strength of the activated CCFC were explained by bonding force between carbon fiber and car-bonized phenolic resin as well as by relative shirnkage between carbon fiber and ceramic film.

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Emulsion Polymerization of Vinyl acetate-Butyl acrylate Copolymer (유화 중합에 의한 비닐 아세테이트-부틸 아크릴레이트 공중합체의 합성 연구)

  • 설수덕;임종민
    • Polymer(Korea)
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    • v.28 no.2
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    • pp.135-142
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    • 2004
  • Poly(vinyl acetate) (PVAc) prepared by emulsion polymerization has broad applications for additives such as paint binder, adhesive for wood and paper due to its low glass transition temperature which help to plasticize substrate resins. Since emulsion polymerization has a disadvantage that surfactant and ionic initiator degrade properties of the product polymer, poly(vinyl acetate-co-butyl acrylate) (VVc-BA) was synthesized using potassium persulfate as catalyst and poly(vinyl alcohol) (PVA) as protective colloid to prevent the degradation. The copolymer latex product was internally plasticized and has enhanced colloid stability, adhesion, tensile strength and elongation. During VAc-BA emulsion polymerization, no coagulation and complete conversion occur with the reactant mixture of 0.7wt% potassium persulfate, 15wt% poly(vinyl alcohol) (PVA-217), and the balanced monomer that the weight ratio of vinyl acetate to butyl acrylate is 19. As the concentrations of PVA increase, the copolymerization becomes faster and polymer particles are more stable, resulting in enhanced mechanical stability of the VAc-BA copolymer. However, the size of the polymer particles decreases with increasing PVA contents. Properties of the VAc-BA copolymer, such as minimum film formation temperature, glass transition temperature, surface morphology, molecular weight and molecular weight distribution, tensile strength and elongation, were characterized using differential scanning calorimeter, transmission electron microscope and other instruments.

Electrical Properties of SrBi$_2$$Nb_2$>$O_9$ Thin Films deposited by RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링법에 의해 증착된 SrBi$_2$$Nb_2$>$O_9$ 박막의 전기적 특성에 관한 연구)

  • Zhao, Jin-Shi;Choi, Hoon-Sang;Lee, Kwan;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.11 no.4
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    • pp.290-293
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    • 2001
  • The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

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Characteristics of the SrBi2Nb2O9 Thin Films Deposited by RF Magnetron Sputtering with Controlling of Bi Contents (RF마그네트론 스퍼터링 법에 의해 증착된 SrBi2Nb2O9 박막의 Bi 량의 조절에 따른 특성분석)

  • Lee, Jong-Han;Choi, Hoon-Sang;Sung, Hyun-Ju;Lim, Geun-Sik;Kwon, Young-Suk;Choi, In-Hoon;Son, Chang-Sik
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.962-966
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    • 2002
  • The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

Dosimetry and Three Dimensional Planning for Stereotactic Radiosurgery with SIEMENS 6-MV LINAC (6-MV선형가속기를 이용한 입체방사선수술의 선량측정 및 3차원적 치료계획)

  • Choi Dong-Rak;Cho Byong Chul;Suh Tae-Suk;Chung Su Mi;Choi Il Bong;Shinn Kyung Sub
    • Radiation Oncology Journal
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    • v.11 no.1
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    • pp.175-181
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    • 1993
  • Radiosurgery requires integral procedure where special devices and computer systems are needed for localization, dose planning and treatment. The aim of this work is to verify the overall mechanical accuracy of our LINAC and develop dose calculation algorithm for LINAC radiosurgery. The alignment of treatment machine and the performance testing of the entire system were extensively carried out and the basic data such as percent depth dose, off-axis ratio and output factor were measured. A three dimensional treatment planning system for stereotactic radiosurgery has been developed. We used an IBM personal computer with C programming language (IBM personal system/2, Model 80386, IBM Co., USA) for calculating the dose distribution. As a result, deviations at isocenter on gantry and table rotation for our treatment machine were acceptable since they were less than 2 mm. According to the phantom experiments, the focusing isocenter were successful by the error of less than 2 mm. Finally, the mechanical accuracy of our three dimensional planning system was confirmed by film dosimetry in sphere phantom.

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