• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.49-52
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cased, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$ and it was distributed in the reeone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.538-541
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• 2003

BSCCO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and PO$_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1664-1667
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• 2007

The belt source evaporation is for the large size AMOLED devices to re-sublimate the organic film deposited on the metal plate. Using the plane source, the PL spectrum of the doped organic film has been studied for the first time. The PL peak of the pure Alq3 film was 512nm and that of the pure Rubrene was 557nm. The PL peak of the 2% Rubrene doped Alq3 film was shifted to $536{\pm}2nm$. The PL peak wavelength measured at the front surface of the film and at the back surface of the film was measured as nearly same as that the doping ratio maintains uniform within the film thickness. In conclusion, the doping control of the organic film becomes real using the belt type plate sublimation deposition.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.526-529
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• 2008

By combining tetraphenylethylene and anthracene, we synthesized 9,10-bis(4-(1,2,2-triphenylvinyl)phenyl) anthracene [BTPPA] and 1,2-di(4'-tert-butylphenyl)-1,2-bis(4'-(anthracene-9-yl)phenyl)ethene [BPBAPE]; both BTPPA and BPBAPE have similar band-gaps, however their PL spectra were shifted by about 30 nm with respect to each other. The fabricated multilayered non-doped OLED devices based on pure BTPPA or BPBAPE exhibited luminance efficiencies of 3.93 cd/A at 6.8 V and 10.33 cd/A at 8.1 V, respectively, at $10\;mA/cm^2$. As the BPBAPE content of the emitting layer increased, the luminance efficiency of the device increased; in addition, the CIE coordinates of the fabricated devices shifted gradually from deep-blue for pure BTPPA to sky-blue for pure BPBAPE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1204-1207
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.127-130
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• 2005

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy and electroluminescence measurements. As the quantum well growth time was changed, the wavelength was varied from 451 to 531 nm. In the varied current conditions, the blue LED with the InN MQW structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN MQW structures do not show the color temperature changes with the variations of applied currents.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.35-40
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• 1981

Thin films of SnO2, SnO2-ZnO and ZnO were prepared by the spray. chemical vapor deposition and vacuum evaporation method. They had good sensitivity to various gases involving toxic gases(i. e. SO2, CO). The change in conductivity of thin film guts sensors prepared was considered as the change in carrier concentration caused by gas absorption. And also the conductivity of the thin film elements had great dependence on atmospheric pressuie around them.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.763-766
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• 2000

The Rapid Prototyping and Tooling technology has been developed. However, most commercial ones currently use resins or waxes as the raw materials. These days. the direct metal deposition methods are researched as a true rapid prototyping and tooling technology. A fundamental study on rapid prototyping and tooling with wire welding technology using $CO_2$ laser radiation was carried out in this paper. The main focus is to develop a simple commercial rapid prototyping and tooling system with the exiting laser welding technology. The process is investigated as a function of laser parameters and process variables. Basic parts were fabricated as out-put and their microstructure, hardness and tensile strength are examined for the reliability. In addition, Its advantages and disadvantages are discussed as a rapid prototyping and tooling system.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.256-259
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• 2003

To develop cleaning process various particles should be deposited on wafer surfaces to measure particle removal efficiencies. The purpose of the article in to evaluate, removal efficient)r of silica and alumina particles from wafer surfaces when they are deposited by dry and wet method. Dry deposition in air and wet spray deposition using solutions are used. van der Waals are considered to calculate the adhesion force of particles on surfaces. Higher adhesion force is measured on alumina particles on silicon when particles are deposited in air.