• Title/Summary/Keyword: Co deposition

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Determination of Si (Li) Detector Efficiency Using Electro-Deposition Sources in 5-15 keV Photon Energy Range (5-15 keV 에너지 범위에서 전기증착 선원을 사용한 Si (Li) 검출기 효율결정)

  • Jeon, Woo-Ju;Park, Tae-Soon;Hwang, Sun-Tae;Joo, Koan-Sik
    • Nuclear Engineering and Technology
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    • v.26 no.4
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    • pp.548-554
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    • 1994
  • The full-energy peak efficiency for a collimated geometry of a Si (Li) detector has been experimentally determined using the electro-deposition sources. The radioactive sources of $^{51}$ Cr, $^{54}$ Mn, $^{57}$ Co and $^{65}$ Zn nuclides are prepared by the electro-deposition method. The measured efficiency values are corrected for the escape losses due to the K X-rays of silicon and the absorptions in materials related to source-to-detector geometry. The corrected efficiency values have turned out to be nearly constant regardless of photon energy.

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Synthesis and Characterization of The Electrolessly Deposited Co(Re,P) Film for Cu Capping Layer (무전해 도금법으로 제조된 Co(Re,P) capping layer제조 및 특성 평가)

  • Han, Won-Kyu;Kim, So-Jin;Ju, Jeong-Woon;Cho, Jin-Ki;Kim, Jae-Hong;Yeom, Seung-Jin;Kwak, Noh-Jung;Kim, Jin-Woong;Kang, Sung-Goon
    • Korean Journal of Materials Research
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    • v.19 no.2
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    • pp.61-67
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    • 2009
  • Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

Capping Intercrystalline Defects of Polycrystalline UiO-66 Membranes by Polydimethylsiloxane Coating (폴리다이메틸실록산 코팅을 통한 다결정성 UiO-66 분리막의 비선택적 결정립계 결함 캡핑)

  • Ik Ji Kim;Hyuk Taek Kwon
    • Clean Technology
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    • v.29 no.1
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    • pp.71-75
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    • 2023
  • In general, the presence of non-selective intercrystalline (grain boundary) defects in polycrystalline metal-organic framework (MOF) or zeolite membranes, which are known to be ca. 1 nm in size, causes lower membrane performance (selectivity) than the intrinsically expected. In this study we show that applying a thin polymeric coating of polydimethylsiloxane (PDMS) on a polycrystalline MOF membrane is effective to cap the non-selective intercrystalline defects and therefore improve membrane performance. To demonstrate the concept, first, polycrystalline UiO-66, one of Zr-based MOFs, membranes were prepared by an in-situ solvothermal growth. By controlling membrane growth condition with respect to growth temperature, we were able to obtain polycrystalline UiO-66 membranes at 150 ℃ with intercrystalline defects of which the quantity is not significant, so it can be plugged by the suggested PDMS deposition. Second, their performances were compared before and after the PDMS deposition. As expected, the PDMS deposition ended up with a noticeable increase in CO2/N2 ideal selectivity from 6 to 14, indicating successful intercrystalline defect plugging. However, the enhancement in CO2/N2 selectivity was accompanied by a significant reduction in CO2 permeance from 5700 to 33 GPU because the PDMS deposition not only plugs defects but also forms a continuous coating on membrane surface, adding an additional transport resistance.

Epitaxial Growth of BSCCO Thin Films Fabricated by Son Beam Sputtering

  • Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.484-488
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    • 1997
  • BSCCO thin film is fabricated cia both processes of co-deposition and layer-by-layer deposition at an ultralow growth rate using ion beam sputtering method. The adsorption of Bi atom and the appearance of Bi-2212 phase shows large differance between both processes. It is found that the resident time of Bi vapor species on the surface of the substrate strongly dominates the film composition and the formation of the structure.

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Li2CO3 분말을 이용한 고밀도 Li1+xCoO2 Target 제조

  • Eun, Yeong-Jin;Yun, Su-Jin;Jo, Seong-Hui;Park, Hyeong-Seok;Lee, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.183-183
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    • 2011
  • 리튬 이온 배터리의 cathode 및 electrolyte 재료로 사용되는 LiCoO2을 sputtering이나 pulsed laser deposition을 이용하여 박막으로 증착하기 위해서는 target이 필요하다. Target은 원료 분말을 가압 성형한 후 고온에서 소결하여 제조된다. LiCoO2 target 제조과정에서 고밀도를 얻기 힘들고 Li 성분의 증발이 일어난다. 또한 Li2O 분말은 흡습성이 매우 크다. 본 연구에서는 시간과 온도를 조절하여 최적화된 소결 과정을 통해 target의 밀도가 이론밀도와 근사한 값을 갖도록 하고, LiCoO2 또는 Co3O4 분말에 각각 흡습성이 낮은 Li2CO3 분말을 첨가하여 Li 성분을 조절하였다. Li과 Co의 조성비가 1:1-2:1인 고밀도의 LiCoO2 target을 제조하여 박막 증착 후 Li과 Co의 조성비가 1:1이 되도록 하였다.

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Low-Temperature Deposition of Ga-Doped ZnO Films for Transparent Electrodes by Pulsed DC Magnetron Sputtering

  • Cheon, Dongkeun;Ahn, Kyung-Jun;Lee, Woong
    • Korean Journal of Materials Research
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    • v.27 no.2
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    • pp.69-75
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    • 2017
  • To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

Numerical Investigation on Wall Flow Control for Preventing Contaminants Deposition inside a Duct (덕트 내 오염물질 퇴적 방지를 위한 벽면유동 제어에 관한 해석적 연구)

  • Lee, Banguk;Lee, Jeekeun
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.25 no.5
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    • pp.261-268
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    • 2013
  • Technologies for preventing contaminants deposition are a key issue in a modern duct system. When particulate matters deposit inside the exhaust pipes, which are widely used in the Urea-SCR system to reduce $NO_x$ emission from heavy duty diesel engines, many problems arise associated with increased flow resistance and corrosion. Therefore, the development of the urea deposition avoidance technologies is being treated as an important issue of the Urea-SCR system. An analytical study was carried out to investigate the effects of the wall flow around the mixer with the variation of the mixer housing surrounding and supporting the mixer, which is designed to increase the wall flow and then to reduce droplet deposition. The housing angles and the position of the mixer were changed:angles of $0^{\circ}$, $1^{\circ}$, $2^{\circ}$, and $3^{\circ}$, and mixer positions of 0 L, 0.5 L, and 1 L. The axial velocity distributions, maximum velocity, the half-width, and momentum distribution of the wall flow were investigated to examine the effect of the mixer-housing assembly geometry.

Impacts of temperature variations on soil organic carbon and respiration at soil erosion and deposition areas

  • Thet Nway Nyein;Dong Kook Woo
    • Proceedings of the Korea Water Resources Association Conference
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    • 2023.05a
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    • pp.447-447
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    • 2023
  • Soil organic carbon (SOC) is a critical indicator of soil fertility. Its importance in maintaining ecological balance has received widespread attention. However, global temperatures have risen by 0.8℃ since the late 1800s due to human-induced greenhouse gas emissions, resulting in severe disruptions in SOC dynamics. To study the impacts of temperature variations on SOC and soil respiration, we used the Soil Carbon and Landscape co-Evolution (SCALE) model, which was capable of estimating the spatial distribution of soil carbon dynamics. The study site was located at Heshan Farm (125°20'10.5"E, 49°00'23.1"N), Nenjiang County in Heilongjiang Province, Northeast China. We validated the model using observed soil organic carbon and soil respiration in 2015 and achieved excellent agreement between observed and modeled variables. Our results showed considerable influences of temperature increases on SOC and soil respiration rates at both erosion and deposition areas. In particular, changes in SOC and soil respiration at the deposition area were greater than at the erosion area. Our study highlights that the impacts of temperature elevations are considerably dependent on soil erosion and deposition processes. Thus, it is important to implement effective soil conservation strategies to maintain soil fertility under global warming.

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Investigation of the Emission Performance in PHOLED by Ir(piq)3 and Zn(BTZ)2 Doping in Emitting Layer

  • Park, Won-Hyeok;Kim, Gang-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.149-149
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    • 2015
  • 본 연구에서는 Host 물질 Alq3와 Dopant 물질 Ir(piq)3, Zn(BTZ)2를 사용한 ITO/NPB/Alq3+ metal complexes/Alq3/LiF/Al 다층 구조의 PHOLED 소자를 제작하고 특성 변화를 파악하였다. Dopant Ir(piq)3를 발광 영역에 도핑하였을 경우에는 소자의 발광 효율이 감소하였다. 이는 Co-deposition 조건에 따른 분자간의 거리가 충분히 가까워지지 않았기 때문이다. 분자간의 거리가 Co-deposition 조건보다 멀게 되면 Host - Dopant 간의 에너지 전달이 제대로 일어날 수 없게 되며, 결과적으로 Host 영역과 Dopant영역에서 각각 발광을 하게 된다. Dopant Zn(BTZ)2를 도핑하였을 경우에는 Host - Dopant 간의 에너지 전달에 의한 효과로 인해, J-V 특성은 50% 이상, L-V 특성은 20% 이상, L-J 특성은 10% 이상 효율이 증가하였다.

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