• IEIE Transactions on Smart Processing and Computing
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• 제6권3호
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• pp.220-227
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• 2017

Technology development is leading to the invention of more sophisticated electronics appliances that require long battery life. Therefore, saving power is a major concern in current-day scenarios. A notable source of power dissipation in sequential structures of integrated circuits is due to the continuous switching of high-frequency clock signals, which do not carry any information, and hence, their switching is eliminated by a method called clock gating. In this paper, we have incorporated a recent clock-gating style named Leakage Control Transistor (LECTOR)-based clock gating to drive a multi-stage sequential architectures, and we focus on its performance under three different process corners (fast-fast, slow-slow, typical-typical) through Monte Carlo simulation at 18 GHz clock with 90 nm technology. This gating is found to be one of the best gated approaches for multi-stage architectures in terms of total power consumption.

• 전자통신동향분석
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• 제35권2호
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• pp.69-78
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• 2020

Small portable devices such as mobile phones and laptops currently display a trend of high power consumption owing to their characteristics of high speed and multifunctionality. Low-power SoC design is one of the important factors that must be considered to increase portable time at limited battery capacities. Popular low power SoC design techniques include clock gating, multi-threshold voltage, power gating, and multi-voltage design. With a decreasing semiconductor process technology size, leakage power can surpass dynamic power in total power consumption; therefore, appropriate low-power SoC design techniques must be combined to reduce power consumption to meet the power specifications. This study examines several low-power SoC design trends that reduce semiconductor SoC dynamic and static power using EDA tools. Low-power SoC design technology can be a competitive advantage, especially in the IoT and AI edge environments, where power usage is typically limited.

• 대한전자공학회논문지SD
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• 제45권6호
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• pp.89-95
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• 2008

본 논문에서는 필터방식 얼굴검출 하드웨어를 저전력 설계하고 그에 따른 전력 소모량을 분석하였다. 얼굴검출 하드웨어는 입력되는 영상에서 얼굴의 위치를 검출하며 내부적으로 6개 모듈과 11개의 모듈 간 버퍼가 삽입되어 각 모듈이 순환 연산한다. 따라서 저전력 설계를 위해 SLEEP 모드와 ACTIVE 모드를 적용하였고, 해당 하드웨어에 모듈별 그리고 레지스터별 클럭게이팅(Clock Gating) 기술을 적용하였다. 추가적으로 모듈간 버퍼는 메모리 파티션을 통해 메모리에서 소비하는 전력양을 줄였으며 게이트 레벨에서도 저전력 설계 기술(Gate level power optimization)을 적용하였다. 이는 삼성 0.18um 공정의 STD130 라이브러리를 사용하여 Synopsis(사)의 Power-Compiler를 통해 구현되었으며 동사의 Prime-Power에 의해 소비 전력량을 측정하였다. 그 결과 저전력 설계 기술을 적용하기 전과 비교하여 ACTIVE 모드일 경우 약 68%의 전력 소모를 줄였다.

• ETRI Journal
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• 제25권6호
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• pp.510-516
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• 2003

In this paper, we describe the development of a platform-based SoC of a 32-bit smart card. The smart card uses a 32-bit microprocessor for high performance and two cryptographic processors for high security. It supports both contact and contactless interfaces, which comply with ISO/IEC 7816 and 14496 Type B. It has a Java Card OS to support multiple applications. We modeled smart card readers with a foreign language interface for efficient verification of the smart card SoC. The SoC was implemented using 0.25 ${\mu}m$ technology. To reduce the power consumption of the smart card SoC, we applied power optimization techniques, including clock gating. Experimental results show that the power consumption of the RSA and ECC cryptographic processors can be reduced by 32% and 62%, respectively, without increasing the area.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1288-1291
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• 2002

In this paper, we present a design of mpeg-4 video codec chip to reduce the power consumption using frame level clock gating and motion estimation skip scheme. It performs 30 grames/s of codec (encoding and decoding) mode with quarter-common intermediate format(QCIF) at 27MHz. A novel low-power techniques were implemented in architectural level, which is 35% of the power dissipation for a conventional CMOS design. This chip performs MPEG-4 Simple Profile Level 2(Simple@L2) and H.263 base mode. Its contains 388,885 gates, 662k bits memory, and the chip size was 9.7 mm x 9.7 mm which was fabricated using 0.35 micron 3-layers metal CMOS technology.