• Title/Summary/Keyword: Clamping voltage ratio

Search Result 31, Processing Time 0.035 seconds

Clamping Voltage Characteristics of ZPCCE-Based Varistors with Sintering Temperature (소결온도에 따른 ZPCCE계 바리스터의 제한전압특성)

  • 남춘우;박종아;김명준;유대훈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.8
    • /
    • pp.835-839
    • /
    • 2004
  • The surge characteristics of ZnO varistors consisting of $ZnO-{Pr}_6{O}_11-CoO-{Cr}_2{O}_3-{Er}_2{O}_3$ceramics were investigated at various sintering temperatures. As sintering temperature raises, the varistor voltage was decreased from 341.2 to 223.1 V/mm, the nonlinear exponent was decreased from 64,9 to 44.1. On the other hand, the leakage current exhibited a minimum(0.64 $\mu$A) at 134$0^{\circ}C$, The clamping capability was slightly deteriorated with increasing sintering temperature. On the whole, the ZPCCE-based ZnO varistors exhibited good clamping voltage characteristics as exhibiting the clamping voltage ratio of 1.85 ∼ 1.92 approximately at surge current of 100 A.

Electrical Properties and Clamping Voltage Characteristics of ZPCCY-Based Varistor Ceramics (ZPCCY계 바리스터 세라믹스의 전기적 성질 및 제한전압 특성)

  • Nahm Choon-Woo;Park Jong-Ah
    • Korean Journal of Materials Research
    • /
    • v.15 no.3
    • /
    • pp.143-148
    • /
    • 2005
  • The microstructure, electrical properties, and clamping voltage characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3(ZPCCY)-based$ varistor ceramics sintered at $1350^{\circ}C$ were investigated as a function of sintering time from 1 to 3 h. With increasing sintering time, the average grain size and density increased in the range of $11.4\~16.0\;{\mu}m$ and $5.34\~5.54g/cm^3$, respectively, in accordance of increasing sintering time. The nonlinear exponent decreased in the range of $60\~26$ and the leakage current increased in the range of $1.3\~10.7\;{\mu}A$ with increasing sintering time. The clamping voltage ratio increased in the range $1.58\~1.65$ for ratio surge current of 10 A as the sintering time increased.

Clamping Voltage Characteristics and Accelerated Aging Behavior of CoCrTb-doped Zn/Pr-based Varistors with Sintering Temperature

  • Nahm, Ghoon-Woo
    • Transactions on Electrical and Electronic Materials
    • /
    • v.10 no.4
    • /
    • pp.125-130
    • /
    • 2009
  • The clamping voltage characteristics and accelerated aging behavior of CoCrTb-doped Zn/Pr-based varistors were investigated for different sintering temperatures. The best clamping voltage characteristics were obtained for the varistors sintered at $1330^{\circ}C$, with a clamping voltage ratio (K) of 1.63 at a surge current of 5 A and 1.75 at a surge current of 10 A. The varistors sintered at $1330^{\circ}C$ exhibited the highest stability, with -0.1% in $%{\Delta}E_{1\;mA}$, -0.2% in $%{\Delta}{\alpha}$, and +15.5% in $%{\Delta}J_L$ for E-J characteristics under a stress state of 0.90 $E_{1\;mA/120^{\circ}C$ /24 h. Furthermore, it exhibited $%{\Delta}{\varepsilon}_{APP}$' of -0.7% and $%{\Delta}tan{\delta}$ of +5.7% for dielectric characteristics under the same stress state.

Electrical Properies, Clamping Voltage Characteristics, and Stability of Dysprosia-doped ZnO-Pr6O11Based Varistors (디스프로시아가 첨가된 ZnO-Pr6O11계 바리스터 전기적 성질, 제한전압특성 및 안정성)

  • Nahm, Choon-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.1
    • /
    • pp.50-56
    • /
    • 2005
  • The electrical properties, clamping voltage characteristics, and stability of dysprosia-doped ZnO-P $r_{6}$ $O_{11}$-based varistors were investigated with different dysprosia contents from 0 to 2.0 mol%. The incorporation of dysprosia in varistor ceramics greatly increased the varistor voltage from 50 to 481.0 V/mm. It was found that the dysprosia is good additive improving a nonlinearity, in which the nonlinear exponent is above or near 50, and the leakage current is below 1.0 $\mu$A. The dysprosia-doped varistors exhibited superior clamping voltage characetristics, in which clamping voltage ratio is above or neat 2 at surge current of 50 A. The 0.5 mol% dysprosia-doped varistors only exhibited high stability, with the rate of varistor voltage of -0.9%, under DC acceleraetd aging stress, 0.95 $V_{lmA}$/15$0^{\circ}C$/24 h.h.h.h.

Electrical and Clamping Voltage Characteristics of ZPCCY-Based Varistor Ceramics (ZPCCY계 바리스터 세라믹스의 전기적 특성 및 제한전압 특성)

  • Park, Jong-Ah;Kim, Myung-Jun;Yoo, Dea-Hoon;Nahm, Choon-Woo
    • Proceedings of the KIEE Conference
    • /
    • 2004.07c
    • /
    • pp.1582-1584
    • /
    • 2004
  • The microstructure, electrical, and clamping voltage characteristics of ZPCCY-based varistor ceramics were investigated in the sintering time range of 1${\sim}$3 h. Increasing sintering time promoted the densification, in which the average grain size and density are increased in the range of $11.4{\sim}16.0{\mu}m$ and $5.34{\sim}5.54g/cm^3$, respectively. The nonlinear exponent decresed in the range of 60${\sim}$26 and the leakage current increased in the range of $1.3{\sim}10.7{\mu}A$ with increase of sintering time. The clamping voltage ratio was less than 2 for ratio surge current of 10 A over sintering times.

  • PDF

A Novel Two-Switch Active Clamp Forward Converter for High Input Voltage Applications

  • Kim, Jae-Kuk;Oh, Won-Sik;Moon, Gun-Woo
    • Proceedings of the KIPE Conference
    • /
    • 2008.06a
    • /
    • pp.520-522
    • /
    • 2008
  • A novel two-switch active clamp forward converter suitable for high input voltage applications is proposed. The main advantage of the proposed converter, compared to the conventional active forward converters, is that circuit complexity is reduced and the voltage stress of the main switches is effectively clamped to either the input voltage or the clamping capacitor voltage by two clamping diodes without limiting the maximum duty ratio. Also, the clamping circuit does not include additional active switches, so a low cost can be achieved without degrading the efficiency. Therefore, the proposed converter can feature high efficiency and low cost for high input voltage applications. The operational principles, features, and design considerations of the proposed converter are presented in this paper. The validity of this study is confirmed by the experimental results from a prototype with 200W, 375V input, and 12V output.

  • PDF

Sintering Effect on Clamping Characteristics and Pulse Aging Behavior of ESD-Sensitive V2O5/Mn3O4/Nb2O5 Codoped Zinc Oxide Varistors

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
    • /
    • v.16 no.6
    • /
    • pp.308-311
    • /
    • 2015
  • V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E1 mA/cm2 = 27 (initial 39) after application of a pulse current of 100 A.

Influence of Sintering Temperature on Surge Characteristics of $Er_2O_3$-Doped ZnO-$Pr_6O_{11}$-Based Varistors ($Er_2O_3$가 첨가된 ZnO-$Pr_6O_{11}$계 바리스터의 써지특성에 소결온도의 영향)

  • Kim, Myung-Jun;Park, Jong-Ah;Yoo, Dea-Hoon;Nahm, Choon-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.04b
    • /
    • pp.171-174
    • /
    • 2004
  • The surge characteristics of $Pr_6O_{11}$-based ZnO varistors consisting of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Er_2O_3$ ceramics were investigated with sintering temperature in the range of $1335{\sim}1345^{\circ}C$. As the sintering temperature is raised, the average grain size was marked1y increased in the range of $9.67{\sim}14.07\;{\mu}m$ and the ceramic density was increased in the range of $5.46{\sim}5.59\;g/cm^3$. While, the nonlinear exponent was decreased in the range of 64.9~44.1 and the clamping voltage ratio was improved in the range of 1.99~2.08. The best varistor properties was obtained from the varistors sintered at $1335^{\circ}C$, exhibiting a maximum (64.9) in the nonlinear exponent and a minimum (1.99) in the clamping voltage ratio.

  • PDF

Lightning Impulse Current Characteristics of ZPCCD-based Varistors (ZPCCD계 바리스터의 뇌충격전류특성)

  • Park, Jong-Ah;Kim, Myung-Jun;Yoo, Dea-Hoon;Nahm, Choon-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.04b
    • /
    • pp.175-178
    • /
    • 2004
  • The microstructure, electrical, and clamping voltage characteristics of ZPCCD-based varistors were investigated at sintering time of 2 and 3 h. The average grain size and density of varistor were increased from 15.2 to 19.0 and from 5.5 to 5.6 $g/cm^3$ with sintering time, respectively. The nonlinear exponent was 65.4 for 2 h and 37.4 for 3 h, and leakage current was 0.54 ${\mu}A$ for 2 h and 0.67 ${\mu}A$ for 3 h. The dissipation factor was 0.0397 for 2 h and 0.0457 for 3 h. The clamping voltage ratio at surge current($8/20{\mu}s$) of 10~300 A was increased in the range of 1.56~2.17.

  • PDF

Clamping-diode Circuit for Marine Controlled-source Electromagnetic Transmitters

  • Song, Hongxi;Zhang, Yiming;Gao, Junxia;Zhang, Yu;Feng, Xinyue
    • Journal of Power Electronics
    • /
    • v.18 no.2
    • /
    • pp.395-406
    • /
    • 2018
  • Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.