• Title/Summary/Keyword: Circuit Resistance

검색결과 1,140건 처리시간 0.03초

저항 점용접의 1차 회로 동저항 모니처링에 관한 연구 (Dynamic Resistance Monitoring in Primary Circuit during Resistatnce Spot Welding)

  • 조용준;황정복;신현일;배경민;권태용;이세헌
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 1998년도 특별강연 및 추계학술발표 개요집
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    • pp.129-132
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    • 1998
  • The dynamic resistance monitoring in primary circuit or T/C is one of the important issues in that in-process and real time quality assurance of resistance spot weld is needed to increase the product reliability. It is well known that tile dynamic resistance curve gives us very useful information about nugget growth and weldability. In the present paper, a new dynamic resistance detecting method is presented as a practical manner of weld quality assurance using instantaneous current and voltage measured by primary circuit. Primary dynamic resistance patterns are basically similar to those of the secondary, but there is evident advantage such as no extra devices are needed to obtain the quality assurance index and eventually feedback control will be possible caused by T/C based monitoring system.

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크로스-결합구조의 부성 미분 저항 회로를 이용한 페리티-시간 대칭 구조의 비접촉 센서 구동 회로에 대한 연구 (Non-Contact Sensing Method using PT Symmetric Circuit with Cross-Coupled NDR Circuits)

  • 홍종균
    • 한국산학기술학회논문지
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    • 제22권4호
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    • pp.10-16
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    • 2021
  • 본 연구에서는 신축성 인덕터를 이용한 센서 응용을 위한 상태 감지 회로로써 패리티-시간 대칭 구조를 고려한 모델을 제안하고자 한다. 신축성 인덕터를 이용한 센서 구동 회로로써 트랜지스터를 이용한 부성 미분 저항 회로를 적용하여 신축성 인덕터를 보다 효율적으로 활용할 수 있는 방법을 제안하고, 패리티-시간 대칭 구조의 결합 공진 회로에 대한 특성 분석을 통해 고전적 공진 회로에 비해 향상된 분해능을 갖는 모델을 설계하였다. 특히, 보다 실질적인 전산모의실험결과를 얻기 위해, 신축성 인덕터 모델의 경우에는 참고문헌의 실험결과를 참고하여 본 연구 모델에 적용하였다. 전산모사를 통해 본 연구에서 사용한 부성 미분 저항 회로를 통해 저항 성분 뿐만 아니라 위상 성분도 제어됨을 확인하였으며, 이러한 결과를 통해 신축성 인덕터의 특성 변화에 따른 회로의 불균형을 부성 미분 저항 회로를 이용하여 보완할 수 있음을 고찰하였다. 이러한 특성을 이용하여 패리티-시간 대칭 구조를 구현할 수 있었으며, 이에 대한 특성에 대하여 논의하였다. 특히, 본 연구에서 제안하는 패리티-시간 대칭 구조의 센서 구동 회로에 대한 주파수 특성의 결과로부터 기존의 고전적 공진 회로에 비해 Q-factor가 최대 20배까지 커질 수 있음을 확인하였다.

전기저항 측정기법을 이용한 오염물질 누출감지시스템의 개발: II. 현장모형시험을 통한 매립지에의 적용성 평가 (Development of Contaminant Leakage Detection System Using Electrical Resistance Measurement: ll. Evaluation of Applicability for Landfill Site by Field Model Tests)

  • 오명학;이주형;박준범;김형석;강우식
    • 한국지반공학회논문집
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    • 제17권6호
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    • pp.225-233
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    • 2001
  • 본 논문에서는 격자망식 전선배치에 의한 침출수 누출감지시스템을 개발하기 위하여 현장모형시험을 통하여 적용성을 평가하였으며, 전기회로시험을 통하여 격자망 전선 배치에서 발생하는 전기회로적 효과를 파악하고자 하였다. 침출수는 전기저항을 감소시키기 때문에 누출지점에서는 다른 지점에 비해 낮은 전기저항값을 나타내었다. 따라서, 전기저항을 측정하는 본 누출감지시스템에 의하여 임의 지점에서 발생하는 침출수의 누출 감지가 가능하였으며, 평면적 분포도를 통하여 누출위치의 파악이 가능하였다. 전기저항이 감소된 지점과 동일한 전선상에 위치한 다른 센서에 서의 측정값도 약간 감소하는 경향을 나타내었으나, 이는 저항이 작은 곳으로 전류의 흐름이 발생하는 전기회로적 효과로 설명할 수 있었다.

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Anti-fuse program circuits for configuration of the programmable logic device

  • Kim, Phil-Jung;Gu, Dae-Sung;Jung, Rae-Sung;Park, Hyun-Yong;Kim, Jong-Bin
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.778-781
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    • 2002
  • In this paper, we designed the anti-fuse program circuit, and there are an anti-fuse program/sense/latch circuit, a negative voltage generator, power-up circuit and etc. in this circuit. An output voltage of a negative voltage generator is about -4,51V. We detected certainly it regardless of simulation result power rise time or temperature change to detect the anti-fuse program state of an anti-fuse program/sense/latch circuit and were able to know what performed a steady action. And as a result of having done a simulation while will change a resistance value voluntarily in order to check an anti-fuse resistance characteristic of this circuit oneself, it recognized as a programmed anti-fuse until 23k$\Omega$, and we were able to know that this circuit was a lot of margin than general anti-fuse resistance 500$\Omega$. Therefore, the anti-fuse program circuit of this study showed that was able to apply for configuration of the programmable logic device.

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트랜지스터 부착 RC 방전회로의 마이크로 방전가공 특성 (Characteristics of RC circuit with Transistor in Micro-EDM)

  • 조필주;이상민;최덕기;주종남
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.235-240
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    • 2002
  • In micro-EBM, it is well blown that RC circuit is suitable for discharge circuit because of its low pulse width and relatively high peak current. To increase machining speed without changing unit discharge energy, charge resistance should be decreased. But, if very low, continuous (or normal) arc discharge occurs, then increases electrode wear and reduces machining speed remarkably. In this paper, RC circuit with transistor is used to micro-EDM. Experimental results show that RC circuit with transistor can cut off continuous (or normal) arc discharge effectively if duty factor and switching period of transistor are set up optimally. Through experiments with varying charge resistance, it can be known that RC circuit with transistor has about two times faster machining speed than that of RC circuit. Especially, it has prominent rise-effect of machining speed in low unit discharge energy, so that a high-quality and high-speed micro-EDM can be realized through RC circuit with transistor.

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트랜지스터 부착 RC 방전회로의 마이크로 방전가공 특성 (Characteristics of RC Circuit with Transistors in Micro-EDM)

  • 조필주;이상민;최덕기;주종남
    • 한국정밀공학회지
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    • 제21권12호
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    • pp.44-51
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    • 2004
  • In a micro-EDM, it is well known that an RC circuit is suitable as a discharge circuit because of its low pulse width and relatively high peak current. To increase machining speed without changing unit discharge energy, charge resistance should be decreased. But, when the resistance is very low, continuous (or normal) arc discharge occurs, electrode wear increases and machining speed is reduced remarkably. In this paper, an RC circuit with transistors is used in a micro-EDM. Experimental results show that the RC circuit with transistors can cut off a continuous (o. normal) arc discharge effectively if the duty factor and switching period of the transistor are set up optimally. Through experiments with varying charge resistances, it is shown that the RC circuit with transistors has about two times faster machining speed than that of an RC circuit.

MFSFET 소자를 이용한 뉴럴 네트워크의 적응형 학습회로 (Adaptive Learning Circuit of Neural Network applying the MFSFET device)

  • 이국표;강성준;윤영섭
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.36-39
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    • 2000
  • The adaptive learning circuit is designed the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results is analyzed. The output frequency of the adaptive learning circuit is inversely proportioned to the source-drain resistance of MFSFET and the capacitance of the circuit. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of imput pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, the frequency modulation characteristics of the adaptive learning circuit, that is, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse are confirmed.

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안정적인 정전류 구동 방식의 파이로 스퀴브 회로 설계 (Pyro Squib Circuit Design with Stable Constant Current Driving Method)

  • 소경재
    • 한국군사과학기술학회지
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    • 제25권5호
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    • pp.545-551
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    • 2022
  • We proposed a design method for constant current pyro squib circuit. The current method using N MOSFET for the stability problem has a weakness of the current change, requiring a new design. This paper identified the problem with conventional squib circuit where the current is reduced by 25 % when maximum resistance is 3 ohms. Thus, we proposed a stable constant current driving circuit using P MOSFET and PNP BJT. We confirmed stable constant circuit operation through simulations and measurements of the proposed circuit design where the current did not change until the resistance reached 3 ohms.

Equivalent-circuit Analysis of ITO/Alq3/Al Organic Light-emitting Diode

  • Chung, Dong-Hoe;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • 제8권3호
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    • pp.131-134
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    • 2007
  • An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

2회선 송전선로에서 상호임피던스와 고장저항을 고려한 거리계전기의 동작 특성 연구 (A Study on Adaptive Distance Protection of Double-circuit Line with Mutual Impedance and Fault Resistance)

  • 이원석;정창호;이준경;김진오
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 A
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    • pp.317-319
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    • 2003
  • This paper describes an adaptive distance relay for double-circuit line protection with mutual impedance and fault resistance. Double-circuit lines have two operating condition; both lines of a double-circuit line are in operation and one line is switched-off and both ends of the line are grounded. For optimal distance protection, the trip region is calculated, which have respect to mutual impedance and fault resistance.

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