• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.246-251
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• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• Journal of IKEEE
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• v.26 no.3
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• pp.373-379
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• 2022

In this paper, since the APD(Avalanche Photo Diode) for LTV(Light to Voltage) conversion uses a high voltage in the operating range unlike other PD(Photo Diode)s, the quenching resistor must be connected in series to prevent overcurrent when using the TIA(Transimpedance Amplifier). In such a case, quenching resistance may affect the transfer function of the TIA circuit, resulting in serious stability. Therefore, in this paper, by analyzing the effect of APD quenching resistance on the voltage and current loop transfer function of TIA, we propose a loop analysis and a method for determining the quenching resistance value to improve stability. TIA circuit with quenching resistance was designed by the proposed method and the stability of operation was verified through simulation and chip fabrication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1099-1105
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• 2006

In this paper, the equivalent circuit model of a Rosen-type multilayer piezoelectric transformer(MPT) has been proposed based on the Mason's equivalent circuit model and the principle of single layer piezoelectric plate. From the piezoelectric direct and converse effects, the symbolic expressions between the electric inputs and outputs of the MPT have been derived from the equivalent circuit model. A simplified equivalent circuit model of the MPT whose driving part has a single input form has been proposed. The symbolic expressions of the driving part have been derived from the simplified equivalent circuit model and the model was compared with the multi-input equivalent circuit model through the simulation. In the comparisons between the simulation results and the experimental data, output voltage is 630 Vp-p in case of 11-layered MPT and 670 Vp-p for 13-layered MPT over the experiment range. As the load resistance increases, output voltage increases and saturates over $300k{\Omega}$ and the resonant frequency changes from 102 kHz to 103 kHz. The simulation and the experimental results agree well over different load resistances and frequencies.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.3
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• pp.212-217
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• 2014

The electric power output characteristics of magnesium fuel cell were investigated with regard to internal resistance. A equivalent circuit with the series-connected three internal resistance was introduced to analyze of the response to change of power. The power output analysis was employed in order to investigate the effect of internal resistances for the electrolyte concentration, air electrode area, Mg electrode area and distance between the electrodes. It was confirmed that internal resistance is generated by the electrolyte, air electrode and metal electrode, then those Internal resistances had a significant effect on the power output decrease. The power output was a maximum when the load resistance maches the internal resistance of the magnesium fuel cell. The fuel efficiency was only 50% at maximum power output. Higher fuel efficiency was achieved when the load resistance is greater than the internal resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.94-97
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• 1997

We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.229-232
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• 2000

In this study, An active band grass filter for 2.14GHz have been designed with MMIC using negative resistance circuit. The negative resistance element was realized with a common-drain FET with series inductive feedback. The designed active filter showed an insertion loss of 0dB at 2.14GHz and a 3-dB bandwidth of 125MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.465-467
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• 1997

The oscillating properties of quartz Crystal Microbalance(QCM) were analyzed by electrical measurement. We tried to analyze the properties of quartz crystal coated with Langmuir-Bladgett(LB) films using the frequency and resistance at resonance in the electrical equivalent circuit. The resonant frequency was decreased linearly as to layers of LB films, however, there are some gap between theoretical values, Sauerbrey's equation and experimental values. The resistance was increase nonlinearly as to layers.

• ETRI Journal
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• v.26 no.6
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• pp.669-672
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• 2004

To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters $C_g=C_T=C_{clk}=1\;aF,\;R_T=5\;M{\Omega},\;V_{clk}=40\;mV$, and $V_{in}=20\;mV$. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.1
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• pp.109-112
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• 2013

It is well known that the maximum torque of a 3-phase induction motor does not vary as the resistance of rotor varies by proportional shifting. However, proportional shifting is derived using simplified equivalent circuit of induction motor. Therefore, there are some errors in the torque characteristics shown in the text book. This paper presents the torque characteristics using not simplified equivalent circuit but equivalent circuit. Errors produced by simplified equivalent circuit are presented.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.97-106
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• 1992

In integrated circuits, protection circuits are required to protect the internal nodes from the harmful ESD(Electrostatic discharge). This paper discusses the characteristics of the circuit components in ESD protection circuitry in order to analyze the ESD phenomina, and the design methodalogy of ESD protection circuits, using test pattern with a variation of the number of diode and transistor. The test devices are fabricated using a 0.8$\mu$m CMOS process. SPICE simulation was also carried out to relate output node voltage and measured ESD voltage. With increasing number of diodes and transistors in protection circuit, the ESD voltage also increases. The ESD voltage of the bi-directional circuit for both input and output was 100-300[V], which in higher than that of only output(uni-directional) circuit. In addition, the ESD protection circuit with the diode under the pad region was useful for the reduction of chip size and parasitic resistance. In this case, ESD voltage was improved to a value about 400[V].