• 세라미스트
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• 제3권6호
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• pp.55-66
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• 2000

• 대한핵의학회:학술대회논문집
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• 대한핵의학회 1996년도 제35차 춘계학술대회 초록집
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• pp.205-205
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• 1996

• 대한핵의학회:학술대회논문집
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• 대한핵의학회 2002년도 제41차 추계학술대회
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• pp.34.2-34.2
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• 2002

• 한국영양학회:학술대회논문집
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• 한국영양학회 2003년도 연합학술대회
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• pp.171.2-171.2
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• 2003

• E2M - 전기 전자와 첨단 소재
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• 제19권9호
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• pp.11-19
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• 2006

SLS crystallization and CMOS LTPS process have been developed for high performance and uniform characteristics. By strictly optimizing SLS optics in conventional 2 shot SLS process, threshold voltage variation of 720 pixel TFTs in 2.2-inch QVGA panel (240xRGB) was remarkably decreased from 1.89 V to 0.56 V of 3sigma value. Mobility of the channel doped NTFT and PTFT for circuits were $146\;and\;38cm^{2}/Vs$, respectively. Functional unit circuits for SOG were also fabricated and properly operated.