• Title/Summary/Keyword: Chemical transport reaction method

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Synthesis of $WS_2$ Solid Lubricant ($WS_2$ 고체 윤활제의 합성)

  • 신동우;윤대현;황영주;김성진;김인섭
    • Tribology and Lubricants
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    • v.13 no.4
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    • pp.60-65
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    • 1997
  • The tungsten disulfide $(WS_2)$ solid lubricant was synthesized by two different reaction processes, i.e., the reaction between $CS_2$ gas phase and solid $WO_3$powder, and the vapour phase transport method of tungsten and sulfur in a high vacuum. The chemical and physical characteristics of synthesized $WS_2$powder were analyzed in terms of the average particle size, morphology, crystalline phase etc. in comparison with those of commercial $WS_2$powder. The solid $WO_3$ powder with the average size of 0.2 ${\mu}{\textrm}{m}$ was reacted with $CS_2$gas flowed with$N_2$or 96%$N_2{\times}4%H_2$forming gas for 36 h and 24 h at 90$0^{\circ}C$ respectively. $WS_2$ crystalline phase was then formed through the intermediate phase of .$W_{20}O_{58}$ In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W:S=1:2.2. The mixture was then heat treated at 85$0^{\circ}C$ for 2 weeks in vacuum. The reaction product obtained showed the average size of 12 ${\mu}{\textrm}{m}$ and the hexagonal plate shape of typical solid lubricant with 2H-$WS_2$crystalline phase.

Characterization of Synthesized WS$_2$ Solid Lubricant (합성 WS$_2$ 고체윤활제의 특성 분석)

  • 신동우;윤대현;최인혁;김인섭
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1997.10a
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    • pp.211-216
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    • 1997
  • The tungsten disulfide (WS$_2$) solid lubricant was synthesized by two different reaction processes, and the chemical and physical characteristics of synthesized WS$_2$ powder were analyzed in terms of the average particle size, morphology, crystalline phase. The solid WO$_3$ powder with the average size of 0.2 $\mu$m was reacted with CS$_2$ gas flowed with N$_2$ or 96% N$_2$ + 4% H$_2$ forming gas for 36 h and 24 h at 900$\circ$C respectively. In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W : S = 1 : 2.2. The mixture was then heat treated at 850$\circ$C for 2 weeks in vacuum The reaction product obtained showed the average size of 12 $\mu$m and the hexagonal plate shape of typical solid lubricant with 2H-WS$_2$ crystalline phase.

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Temperature Dependence of Energy Gap and Thermodynamic Function Properties of Undoped and Co-doped $Cd_{4}GeSe_{6}$ Sing1e Crystals by Chemical Transport Reaction Method (화학수송법으로 성장한 $Cd_4GeSe_{6}$$Cd_{4}GeSe_{6}$ : $CO^{2+}$ 단결정에서 에너지 띠 간격의 온도의존성 및 열역학함수 추정)

  • Kim, Nam-Oh;Kim, Hyung-Gon;Kim, Duck-Tae;Hyun, Seung-Cheol;Oh, Gum-Kon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.2
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    • pp.85-90
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    • 2003
  • In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

Optical Properties of Zn4GeSe6:Co2+ Single Crystals (Zn4GeSe6:Co2+ 단결정의 광학적 특성)

  • 김형곤;김남오;최영일;김덕태;김창주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.4
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    • pp.272-279
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    • 2003
  • In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

Temperature Dependence of Energy Gap and Thermodynamic Function Properties of Undoped and Co-doped $Cd_{4}GeSe_{6}$ Single Crystals by Chemical Transport Reaction Method (화학수송법으로 성장한 $Cd_{4}GeSe_{6}$$Cd_{4}GeSe_{6}:Co$ 단결정에서 Energy Gap의 온도의존성 및 열역학함수 추정)

  • Kim, D.T.;Kim, N.O.;Choi, Y.I.;Kim, B.C.;Kim, H.G.;Hyun, S.C.;Kim, B.I.;Song, C.I.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.31-36
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    • 2002
  • In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

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Thioacetic-Acid Capped PbS Quantum Dot Solids Exhibiting Thermally Activated Charge Hopping Transport

  • Dao, Tung Duy;Hafez, Mahmoud Elsayed;Beloborodov, I.S.;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.457-465
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    • 2014
  • Size-controlled lead sulfide (PbS) quantum dots were synthesized by the typical hot injection method using oleic acid (OA) as the stabilizing agent. Subsequently, the ligand exchange reaction between OA and thioacetic acid (TAA) was employed to obtain TAA-capped PbS quantum dots (PbS-TAA QDs). The condensation reaction of the TAA ligands on the surfaces of the QDs enhanced the conductivity of the PbS-TAA QDs thin films by about 2-4 orders of magnitude, as compared with that of the PbS-OA QDs thin films. The electron transport mechanism of the PbS-TAA QDs thin films was investigated by current-voltage (I-V) measurements at different temperatures in the range of 293 K-473 K. We found that the charge transport was due to sequential tunneling of charge carriers via the QDs, resulting in the thermally activated hopping process of Arrhenius behavior.

Optical and Electrical Properties of $\beta$-$FeSi_2$ Single Crystals ($\beta$-$FeSi_2$ 단결정의 전기적 광학적인 특성)

  • 김남오;김형곤;이우선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.618-621
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    • 2001
  • Plate-type $\beta$-FeSi$_2$single crystals were grown using FeSi$_2$, Fe, and Si as starting materials by the chemical transport reaction method. The $\beta$-FeSi$_2$single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the $\beta$-FeSi$_2$ single crystal. The electrical resistivity values was 1.608Ωcm and electron mobility was 3x10$^{-1}$ $\textrm{cm}^2$/V.sec at room temperature.

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Photoluminescence of Undoped and $Ho^{3+}-Doped ZnSe,\; Mg_{0.15}Zn_{0.85}$Se Single Crystals (ZnSe, $ZnSe:Ho^{+3}, Mg_{0.15}Zn_{0.85}Se\; 및 Mg_{0.15}Zn_{0.85}Se:Ho^{3+}$ 단결정의 광발광 특성에 관한 연구)

  • Kim, Nam-O;Kim, Hyeong-Gon;O, Geum-Gon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.9
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    • pp.434-437
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    • 2001
  • ZnSe, ZnSe:Ho/sup 3+/, Mg/sub x/Zn/sub 1-x/Se and Mg/sub x/Zn/sub 1-x/Se:Ho/sup 3+/ crystals were grown by the chemical transport reaction method. The crystal structures and optical energy band gaps of the single crystals were investigated. Their photoluminescence(PL) spectra were measured at 10 [K]. Sharp emission peaks in the blue-green wavelength range and broad emission peaks in the yellow-red wavelength range were observed. The single crystals doped with 1.0 [mol%] of holmium did not show the sharp emission peaks because of defects which were thought to be originated to the holmium dopant.

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Numerical Simulation of Laminar Reacting Flows Using Unstructured Finite Volume Method With Adaptive Refinement

  • Kang, Sung-Mo;Kim, Hoo-Joong;Kim, Yong-Mo
    • Journal of the Korean Society of Combustion
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    • v.6 no.2
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    • pp.15-22
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    • 2001
  • A pressure-based, unstructured finite volume method has been applied to couple the chemical kinetics and fluid dynamics and to capture effectively and accurately the steep gradient flame field. The pressure-velocity coupling is handled by two methodologies including the pressure-correction algorithm and the projection scheme. A stiff, operator-split projection scheme for the detailed nonequilibrium chemistry has been employed to treat the stiff reaction source terms. The conservative form of the governing equations are integrated over a cell-centered control volume with collocated storage for all transport variables. Computations using detailed chemistry and variable transport properties were performed for two laminar reacting flows: a counterflow hydrogen-air diffusion flame and a lifted methane-air triple flame. Numerical results favorably agree with measurements in terms of the detailed flame structure.

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Optical Properties of SnS2 Single Crystals

  • Lee Choong-Il
    • Korean Journal of Materials Research
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    • v.15 no.3
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    • pp.195-201
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    • 2005
  • The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.