• 제목/요약/키워드: Chemical rounding

검색결과 7건 처리시간 0.02초

Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells

  • Song, Inseol;Lee, Hyunju;Lee, Sang-Won;Bae, Soohyun;Hyun, Ji Yeon;Kang, Yoonmook;Lee, Hae-Seok;Ohshita, Yoshio;Ogurad, Atsushi;Kim, Donghwan
    • Current Applied Physics
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    • 제18권11호
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    • pp.1268-1274
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    • 2018
  • We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

결정질 실리콘 태양전지 표면 역 피라미드 구조의 특성 분석 (Influence of Inverted Pyramidal Surface on Crystalline Silicon Solar Cells)

  • 양지웅;배수현;박세진;현지연;강윤묵;이해석;김동환
    • Current Photovoltaic Research
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    • 제6권3호
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    • pp.86-90
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    • 2018
  • To generate more current in crystalline silicon solar cells, surface texturing is adopted by reducing the surface reflection. Conventionally, random pyramid texturing by the wet chemical process is used for surface texturing in crystalline silicon solar cell. To achieve higher efficiency of solar cells, well ordered inverted pyramid texturing was introduced. Although its complicated process, superior properties such as lower reflectance and recombination velocity can be achieved by optimizing the process. In this study, we investigated optical and passivation properties of inverted pyramid texture. Lifetime, implied-Voc and reflectance were measured with different width and size of the texture. Also, effects of chemical rounding at the valley of the pyramid were observed.

UO$_2$(NO$_3$)$_2$ 용액으로부터 Ammonium Uranyl Carbonate 제조 (A Precipitation of Ammonium Uranyl Carbonate from Uranylnitrate Solution)

  • 김응호;김형수;이규암;유재형;최청송
    • 한국세라믹학회지
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    • 제35권6호
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    • pp.559-568
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    • 1998
  • Studies of preparation condition and characteristics of AUC(ammonium uranyl carbonate) were carried out to optimize AUC process with different reactor sizes and precipitation methos. As results four types of precipitates with different chemical compositions and morphologies were obtained from the reaction of {{{{ {(NH }_{4 }) { }_{2 } {CO }_{3 } }} with {{{{ {UO }_{2 }( {NO }_{3 }) { }_{2 } }} solution. A phase diagram has been made and crystal structure and chemical composition of each phase have been characterized by using SEM X-ray IR and thermal analysis. It was found that ammonium uranyl carbonate {{{{ {(NH }_{4 }) { }_{4 } {UO }_{2 } {(CO }_{3 }) { }_{3 } }} with monoclinic crystal morphology could be syn-thesized when the mole ratio of in {{{{ {(NH }_{4 }) { }_{2 } {CO }_{3 }/ {UO }_{2 } {(NO }_{3 }) { }_{2 } }} in the solution was higher than 5 Also a mechanism and a precipitating condition on rounding of the AUC particle were examined in the course of the AUC pre-cipitation. The rounding of the AUC particle was possible only by external circulation using pump not by internal circulation using agitator.

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미세 표면 구조물을 갖는 패드의 제작 및 STI CMP 특성 연구 (Development of Microstructure Pad and Its Performances in STI CMP)

  • 정석훈;정재우;박기현;서현덕;박재홍;박범영;주석배;최재영;정해도
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.203-207
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    • 2008
  • Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

STI 채널 모서리에서 발생하는 MOSFET의 험프 특성 (The MOSFET Hump Characteristics Occurring at STI Channel Edge)

  • 김현호;이천희
    • 한국시뮬레이션학회논문지
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    • 제11권1호
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    • pp.23-30
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    • 2002
  • An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

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마이크로 표면 구조물을 갖는 패드의 STI CMP 특성 연구 (A Study on STI CMP Characteristics using Microstructure Pad)

  • 정재우;박기현;장원문;박선준;정문기;정해도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.356-357
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    • 2005
  • Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

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영세사업장 보건관리 지원사업 실시 전후의 산업보건수준 비교 분석 (A Comparative Analysis of the Level of Occupational Health : Before and After the Subsidiary Program on Health Care Management of Small Scale Industries)

  • 정혜선
    • 한국직업건강간호학회지
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    • 제4권호
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    • pp.58-83
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    • 1995
  • The small scale industries which have less than 30 employees occupy 86.5% of total number of industries in Korea. And though they have higher accident rate and lower environmental condition than big industries, it has been not mandatory to appointing health care manager at factory. So, from 1993, government subsidizes to the health care management of small industries. The purpose of this study is to identify the real feature of health care status in small industries, and to evaluate the level of health care management, before and after the subsidiary program. 65 small plating industries which have been managed by the same health care management support institution in 1993 were selected for study. Of the 65 industries, 3 which have not taken both environmental evaluation and health screening in 1994, and 9 which have closed were excluded from study sample. And the remaining 53 were analyzed by using the results of environmental evaluation and health screening, reported to the Ministry of Labor, before and after the subsidiary program, the analysis was done by the comparison of the two year paired data of the same industry. Over-permissible-limit rate, health screening implementation rate, above grade C rate were calculated and compared. The status of health care management ; 1. Of the sample industries, 96.9% provide protective equipment and 80.0% set up ventilating system. Protective gloves (89.2%) and protective clothing (80.0%) are widely provided, but ear plugs (4.6%) are rarely provided. 21.5% of the protective equipment are well put on, and 40.4% of the ventilating systems function well. 2. In 1993, 35 industries, 53.8% of the sample, checked working environment twice. Over-permissible-limit rates of heavy metal (12.2%), suspended particle (11.1%), noise (5.5%) were high. To put on protective equipment and to set up local ventilating system were pointed out by the examiners. 3. General health screening was done at 63.1% of the sample industries and 35.3% of total workers were examined. Specific health screening was done at 93.8% of the sample industries and 75.4% of workers were examined. 15.5% of workers was provided to be above grade C and to have digestive system disease (43.3%), circulatory disease (18.9%), and hematopoietic disease (14.2%), etc. 4. In 1993, the subsidiary program of health care management was provided in forms of health education, health counseling, and rounding check of working field. And 61.5%, 83.0%, 55.4% of sample industries respectively received it. The average visit per industry was 1.8. Comparisons of the level of occupational health before and after the subsidiary program ; 1. Over-permissible-limit rates of hazardous factors of 1993 and that of 1994 were compared. The rates of suspended particle, noise, organic solvent of 1994 (37.5%, 13.4%, 24.2% respectively) were higher than that of 1993 (25.0%, 6.0%, 6.3% respectively). In the case of acid, there was no difference between the rate of 1993 and that of 1994. Only the rate of heavy metal decreased from 12.9% in 1993 to 3.0% in 1994. 2. General health screening was done at 38.7% of the sample industries in 1993 and at 44.6% in 1994. But the implementation rate of specific health screening decreased from 72.4% in 1993 to 64.6% in 1994. 3. The implementation rate of specific health screening was analyzed by some health factors. The rate of suspended particle increased from 61.8% in 1993 to 91.2% in 1994. But the rates of the others-noise, organic solvent, heavy metal, specific chemical substances-decreased. 4. Above grade C rate in health screening increased from 27.8% in 1993 to 35.5% in 1994. But that of endocrine disorders and pulmonary disease decreased.

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