• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.581-593
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• 2022

As energy depletion and environmental pollution problems are intensified, research has been conducted actively on alternative energy sources, an eco-friendly and continuous available energy conversion system. So has been organic solar cells whose efficiency is improved to 18.32%. The photoactive layer inside the solar cell is composed of a donor and a acceptor, and the combination of materials capable of effectively exchanging electrons greatly affects the efficiency of the organic solar cell. Accordingly, various researches have been conducted to improve the efficiency, and the maximum efficiency could be achieved by a solar cell with high carrier generation and low charge recombination characteristics through the introduction of a non-fullerene acceptor and material reconstruction. Organic solar cells are still difficult to commercialize due to their efficiency limitations and light stability, but if a photoactive layer consisting of a donor capable of efficiently absorbing long-wavelength light and an acceptor capable of forming an appropriate energy level is designed, the efficiency of the organic solar cell will reach 20%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.441-441
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• 2012

Franz Keldysh Oscillation (FKO)은 p-n 접합 구조의 Photoreflectance (PR) spectra에서 표면 및 계면의 전기장(electric field) 특성을 반영한다. InAs/GaAs 양자점 태양전지(Quantum Dot Solar Cell, QDSC) 구조에서 InAs 양자점 층 전후에 AlGaAs 층을 삽입하여 퍼텐셜 장벽(potential barrier) 두께에 따른 PR spectra 및 GaAs-matrix에서 FKO 주파수 특성을 비교 분석하였다. InAs/GaAs 양자점 태양전지는 p-i-n 구조의 i-GaAs에 2.0 monolayer (ML), 8주기의 InAs 양자점 층을 삽입하여 Molecular Beam Epitaxy (MBE) 방법으로 성장하였다. 각 양자점 층 전후에 두께가 각각 0.0, 1.6, 2.8, 6.0 nm인 AlGaAs 층을 삽입하여 퍼텐셜 장벽 두께에 따른 FKO 주파수 변화를 관측하였다. 또한 태양전지 구조의 전기장 분포를 좀 더 용이하게 관측하기 위해 여기 광의 세기(power intensity)를 충분히 낮추어 Photovoltaic effect에 의한 내부 전기장의 변화를 최소화하여 비교 분석하였다. InAs/GaAs 양자점 태양전지 구조에서 AlGaAs 장벽층이 없는 경우, PR spectra의 Fast Fourier Transform 결과에 반영되는 FKO 주파수 특성은 p-i-n 구조 계면에서 공핍층(depletion region)의 space charge field보다 양자점 층의 내부 전기장에 의한 FKO 주파수가 더 큰 진폭(amplitude)을 보였다. 반면에, AlGaAs 장벽층이 삽입되면 두께가 커짐에 따라 p-i-n 구조 계면의 space charge field에 의해 더 큰 진폭의 FKO 주파수가 관측되었다. 이는 AlGaAs 장벽층이 삽입됨으로써 양자점 층 내 양자 상태 수 및 여기광에 의한 캐리어의 수와 관련이 있음을 확인하였으며, 결과적으로 GaAs-matrix에서 p-i-n 구조 계면의 space charge field에 영향을 미치게 됨을 알 수 있다. 이러한 PR 특성 결과들을 InAs/GaAs 양자점 태양전지의 설계 및 제조에 반영함으로써 양자효율 증대에 기여할 것으로 기대된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.8
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• pp.728-734
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• 2016

The improvements of living and lifestyle have led to the increased sales of frozen milk products, such as soft ice cream or slush. These frozen milk products are commonly made in small refrigeration machines. R-502, which has long been used as the refrigerant in soft ice cream machines, is being replaced with R-404A due to the ozone layer depletion issue. In this study, an optimization and performance evaluation were conducted on a soft ice cream machine with a freezer volume of 2.8 liters. The optimization focused on the appropriate refrigerant charge and expansion valve opening. Under the optimized conditions, ice cream was produced in 10 minutes and 5 seconds, and the COP was 0.57. The performance tests included ice cream sales with no interval, ice cream sales with 30 second intervals and under extreme outdoor conditions. The results showed that 20 sales were possible with no interval, and infinite sales could be made with 30 seconds intervals. Ice cream sales were also possible under summer or winter outdoor conditions. The present results may be used for the design of food refrigeration machines as well as to optimize other refrigeration cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.771-774
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• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

• Corrosion Science and Technology
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• v.3 no.4
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• pp.131-139
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• 2004

Effects of PbO on the repassivation kinetics and characteristics of passive film of Alloy 690 were examined to elucidate the influences of PbO on the SCC resistance of that alloy. The repassivation kinetics of the alloy was analyzed in terms of the current density flowing from the scratch, i(t), as a function of the charge density that has flowed from the scratch, q(t). Repassivation on the scratched surface of the alloy occurred in two kinetically different processes; passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t), and then grew according to the high field ion conduction model in which log i(t) is linearly proportional to 1/q(t) with a slope of cBV. The cBV is found to be a parameter representing repassivation rate and hence SCC susceptibility of the alloy. The lower the value of cBV, the faster the repassivation rate and the higher the SCC resistance of an alloy. Addition of PbO to pH 4 and 10 solutions increased the value of cBV of alloy 690, reflecting slower repassivation rate than without PbO. The change in the value of cBV was grater in pH 10 than in pH 4. The increase in SCC susceptibility of alloy 690 with the addition of PbO to solution was presumably due to the Cr-depletion in the outer parts of passive film of the alloy with an incorporation of Pb compounds in the film, which was revealed by Mott-Schottky, AES and XPS analyses.

• Journal of Electrochemical Science and Technology
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• v.13 no.1
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• pp.128-137
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• 2022

For this study, the sol gel method was used to synthesize the spinel LiNi_0.5Mn_1.5O₄ (LNMO) electrode material. Structural, morphological, electrochemical, and kinetic aspects of the LNMO have been characterized. The synthesized LNMO was indexed with the Fd3m cubic space group. The excellent capacity retention indicates that the spinel framework of LNMO has the ability to withstand high rate charge-discharge throughout long cycle tests. The Li diffusion coefficient (D_Li) changes non-monotonically across three orders of magnitude, from 10^-9 to 10^-12 cm² s^-1 determined from GITT method. The variation of D_Li seemed to be related to three oxidation reactions that happened throughout the charging process. A small dip in D_Li at the beginning stage of Li deintercalation is correlated with the oxidation of Mn³⁺ to Mn⁴⁺. While two pronounced D_Li minima at 4.7 V and 4.75 V are due to the oxidation of Ni²⁺/Ni³⁺ and Ni³⁺/Ni⁴⁺ respectively. The depletion of D_Li at the high voltage region is attributed to the occurrence of two successive phase transformation phenomena.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.8-12
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• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.2
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• pp.719-725
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• 2017

Frozen milk products are commonly made in small refrigeration machines. R-502 has long been used as a refrigerant for soft ice cream machines, but it is being replaced with R-404A due to the issue of ozone layer depletion. However, R-404A has high global warming potential, so it also needs to be replaced. In this study, a mixture of R-290 and R-32 was considered as a new refrigerant. An optimization and performance evaluation of the mixture were conducted for a freezer volume of 2.8 liters. The focus of the optimization was the appropriate refrigerant charge and the opening of the expansion valve. At the optimized conditions, ice cream was produced in 6 minutes and 24 seconds with the mixture, and the COP was 0.83. For R-404A, the ice cream production time was 6 minutes and 22 seconds, and the COP was 0.90. The results may be used for the design of food refrigeration machines and to optimize other refrigeration cycles.