• Advances in materials Research
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• v.6 no.2
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• pp.169-184
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• 2017

Electro-Discharge machining (EDM) is a thermal process comprising a complex metal removal mechanism. This method works by forming of a plasma channel between the tool and the workpiece electrodes leading to the melting and evaporation of the material to be removed. EDM is considered especially suitable for machining complex contours with high accuracy, as well as for materials that are not amenable to conventional removal methods. However, several phenomena can arise and adversely affect the surface integrity of EDMed workpieces. These have to be taken into account and studied in order to optimize the process. Recently, artificial neural networks (ANN) have emerged as a novel modeling technique that can provide reliable results and readily, be integrated into several technological areas. In this paper, we use an ANN, namely, the multi-layer perceptron and the back propagation network (BPNN) to predict the mean surface roughness of electro-discharge machined surfaces. The comparison of the derived results with experimental findings demonstrates the promising potential of using back propagation neural networks (BPNNs) for getting a reliable and robust approximation of the Surface Roughness of Electro-discharge Machined Components.

• Asian Journal of Atmospheric Environment
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• v.8 no.4
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• pp.212-224
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• 2014

There are several studies on the effects of emissions of highly reactive volatile organic compounds (HRVOC) from the industrial sources in the Houston-Galveston-Brazoria (HGB) area on the high ozone events during the Texas Air Quality Study (TexAQS) in summer of 2000. They showed that the modeled atmosphere lacked reactivity to produce the observed high ozone event and suggested "imputation" of HRVOC emissions from the base inventory. Byun et al. (2007b) showed the imputed inventory leads to too high ethylene concentrations compared to the measurements at the chemical super sites but still too little aloft compared to the NOAA aircraft. The paper suggested that the lack of reactivity in the modeled Houston atmosphere must be corrected by targeted, and sometimes of episodic, increase of HRVOC emissions from the large sources such as flares in the Houston Ship Channel (HSC) distributed into the deeper level of the boundary layer. We performed retrospective meteorological and air quality modeling to achieve better air quality prediction of ozone by comparison with various chemical and meteorological measurements during the Texas Air Quality Study periods in August-September 2006 (TexA QS-II). After identifying several shortcomings of the forecast meteorological simulations and emissions inputs, we prepared new retrospective meteorological simulations and updated emissions inputs. We utilized assimilated MM5 inputs to achieve better meteorological simulations (detailed description of MM5 assimilation can be found in F. Ngan et al., 2012) and used them in this study for air quality simulations. Using the better predicted meteorological results, we focused on the emissions uncertainty in order to capture high peak ozone which occasionally happens in the HGB area. We described how the ozone predictions are affected by emissions uncertainty in the air quality simulations utilizing different emission inventories and adjustments.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.2-54.2
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• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

• The KIPS Transactions:PartC
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• v.11C no.7 s.96
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• pp.871-878
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• 2004

Recenty, there has been great interest in MANET from various areas. In this paper we focus on performance analysis of on demand routing protocols surf as DSR, AODV, and TORA in MANET. We have conducted several simulations concerned with application service data such as sensor, text. voice, and video data. And then, we have evaluated the performance of three protocols in a pre-designed ad hoc network, which is consisted of 20 nodes. As a result, we have obtained quantitative data for packet delivery fraction, average end to-end delay, routing load, channel utilization from upper layer and supportable routing protocol for application service data. The results can be used for designing specific-purposed ad-hoc networks.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• The Journal of Engineering Geology
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• v.10 no.2
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• pp.172-188
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• 2000

This paper presents the state of art and the role of geophysical exploration techniques with evaluating the trend of domestic and worldwide seawater intrusion research, and illustrates advanced techniques obtained through the project of 'Development of the techniques for estimation, prediction, and prevention of seawater intrusion' funded by the Ministry of Science and Technology of Korea. The advanced geophysical interpretation was achieved by adding the digital geophysical logging data. DC resistivity and TEM monitorings were applied to determine whether or not the seawater intrusion was in progress. Induced Polarization technique using electric current monitoring channel was introduced to discriminate seawater contaminated zone from highly conductive layer caused by clay minerals. A conceptual model was suggested with spatial visualization of the study area to predict the diffusion of seawater contamination. Finally, the future work of the development of geophysical techniques was suggested with the base of the present level of them.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.189-189
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• 2010

최근 연구와 생산에 가속이 붙기 시작한 AMOLED는 모두 LTPS TFT를 사용하고 있다. LTPS TFT는 높은 전자 이동도를 가지고 있기 때문에 현재 각광 받는 AMOLED에 잘 맞는다. 하지만 LTPS TFT는 균일성이 낮고 고비용이라는 문제점이 있으며, 현재 대면적 기술이 부족한 상태이다. 극복방안으로 AMOLED를 타겟으로 하는 Oxide TFT와 a-Si TFT의 기술이 발전되고 있다. Oxide TFT는 AMOLED backplane으로 사용될 수 있는 강력한 후보 중의 하나이다. Oxide TFT는 단결정 산화물과 다결정 복합 산화물 두 가지 범주를 가지고 있다. 본 연구에서는 다결정 Oxide TFT의 하나인 ZTO TFT를 연구함으로서 Engineer의 근본적 이슈인 저비용에 초점을 맞추어 소자특성을 확인해보도록 한다. n-type wafer 에 PE-CVD 장비를 이용하여 SiNx를 120 nm 증착하고, channel layer인 ZTO 용액을 spin-coating을 이용하여 형성하였다. 균일하게 형성된 ZTO의 결정을 위하여 $500^{\circ}C$에서 1시간 동안 공기 중에서 annealing을 하였다. 과정을 거친 ZTO는 약 30 nm 두께로 형성되었다. Thermal evaporator를 이용하여 Source, Drain의 전극을 형성 하고, wafer 뒷면에는 Silver paste를 이용하여 Gate를 형성하였다. 제작된 소자를 dark room temperature 에서 측정 하였다. 측정된 소자는 우수한 전기적 특성과 0.96 cm2/Vs 인 이동도를 얻어냈다. 이러한 소자의 안정성에 따른 전기적 특성을 관측하기 위하여 상온에서 $100^{\circ}C$ 까지의 온도 스트레스를 주었다. Stress에 따른 소자는 상온에서 시작하여 온도가 올라갈수록 이동도가 낮아지고, 문턱전압 증가와 SS이 커짐을 알 수 있었다. 캐리어의 운동 매커니즘에서 온도가 올라가면 격자진동의 영향을 크게 받음으로서 캐리어의 이동도가 낮아져 전기적 특성이 낮아지는 점이 본 연구에도 적용됨을 알 수 있었다. 본 연구를 통하여 화학적 안정성을 지닌 소자라는 점과 더불어 여타 TFT공정에 비하여 현저히 낮은 공정비용을 통하여 AMOLED가 요구하는 수준의 특성에 가까운 소자를 제작할 수 있다는 것을 확인하였으며 앞으로의 추가적인 연구에 따라서 더욱 완성된 공정기술을 기대할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Journal of Communications and Networks
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• v.11 no.5
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• pp.518-528
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• 2009

IEEE 802.11 wireless local area network (WLAN) has become the prevailing solution for wireless Internet access while transport control protocol (TCP) is the dominant transport-layer protocol in the Internet. It is known that, in an infrastructure-based WLAN with multiple stations carrying long-lived TCP flows, the number of TCP stations that are actively contending to access the wireless channel remains very small. Hence, the aggregate TCP throughput is basically independent of the total number of TCP stations. This phenomenon is due to the closed-loop nature of TCP flow control and the bottleneck downlink (i.e., access point-to-station) transmissions in infrastructure-based WLANs. In this paper, we develop a comprehensive analytical model to study TCP dynamics in infrastructure-based 802.11 WLANs. We calculate the average number of active TCP stations and the aggregate TCP throughput using our model for given total number of TCP stations and the maximum TCP receive window size. We find out that the default minimum contention window sizes specified in the standards (i.e., 31 and 15 for 802.11b and 802.11a, respectively) are not optimal in terms of TCP throughput maximization. Via ns-2 simulation, we verify the correctness of our analytical model and study the effects of some of the simplifying assumptions employed in the model. Simulation results show that our model is reasonably accurate, particularly when the wireline delay is small and/or the packet loss rate is low.