• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.2-215.2
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• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.256-256
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• 2012

Oxide semiconductors such as zinc tin oxide (ZTO) or indium gallium zinc oxide (IGZO) have attracted a lot of research interest owing to their high potential for application as thin film transistors (TFTs) [1,2]. However, the instability of oxide TFTs remains as an obstacle to overcome for practical applications to electronic devices. Several studies have reported that the electrical characteristics of ZnO-based transistors are very sensitive to oxygen, hydrogen, and water [3,4,5]. To improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistor, back channel passivation layer is essential for the long term bias stability. In this study, we investigated the instability of amorphous indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) by the back channel contaminations. The effect of back channel contaminations (humidity or oxygen) on oxide transistor is of importance because it might affect the transistor performance. To remove this environmental condition, we performed vacuum seasoning before the deposition of hybrid passivation layer and acquired improved stability. It was found that vacuum seasoning can remove the back channel contamination if a-IGZO film. Therefore, to achieve highly stable oxide TFTs we suggest that adsorbed chemical gas molecules have to be eliminated from the back-channel prior to forming the passivation layers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.325-329
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• 2003

In this paper. the stability and performance analysis of wave-based teleoperation system is presented. For stability and performance analysis with respect to the variation of characteristic impedance b, loop gains of communication channel and minimum value of trasmitted impedance from slave side to the master side are considered. The stability of slave side may be enhanced by increasing characteristic impedance b, whereas exssively high value of b may degrade the performance, which imply a tradeoff between stability and performance.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.8
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• pp.728-733
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• 2008

Unsteady aerodynamic analysis of an air-pressure-levitated high-speed ground vehicle moving over the nonplanar ground surface are performed using the boundary-element method. The potential flow solution is included in a time-stepping loop and the wake is captured as part of the solution. When the vehicle moving inside the channel, the lift coefficient and the pitching moment coefficient of the vehicle are increased further because the air trapped by the channel increases the ground effect. In other words, the nonplanar ground surface such as the channel decreases further the longitudinal stability of the vehicle. On the other hand, there is little difference between the ground and the channel in the lateral stability of the vehicle because the lift increment due to the nonplanar ground surface such as the channel takes place on both sides of the wing with the same rate of increase.

• Journal of the Korean Society of Hazard Mitigation
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• v.10 no.6
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• pp.17-25
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• 2010

This paper studied on stability of the U-channel segmental concrete bridge under vehicle-impact loads. The U-channel bridge has advantages in that it reduces an additional dead load and the edge beams role as a barrier. But it has a dangerous factor which collapses the bridge structure when the edge beams are ruptured. Therefore, it is necessary to verify behaviors of the bridge system under vehicle-impact loads. Static and dynamic vehicle impact simulations were carried out on the basis of AASHTO LRFD design specifications. In case of the static analysis, equivalent static loads specified in the AASHTO codes are loaded on the edge beams and in case of the dynamic analysis, FEM vehicle models are modeled by applying the dynamic test specifications of AASHTO codes. As a result, it is shown that U-channel bridge system has sufficient safety against static and dynamic impact loads specified in the AASHTO LRFD design specifications.

• Journal of the Korean Society of Safety
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• v.16 no.3
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• pp.12-18
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• 2001

The objective of the present work is to examine the effect of inclined angle of channel with multi heat source on thermal stability of electronic equipment. The heat sources are mounted on both sides of channel walls by two kinds of configuration such as the zig-zag md symmetric on. Conductive heat transfer was estimated by using of thermocouples and heat flux sensor. Thus, convective heat transfer and mean Nusselt number could be obtained. With increased inclined angle, the convective heat transfer coefficient was decreased. When inclined angle was smaller than 30 degree, The average Nusselt number of Big-zag configuration was larger than that of symmetric. Furthermore, when protruding ration was 0.082, the temperature was strongly affected by inclined angle. whereas, when protruding ration was 0.25, the temperature was strongly affected by heat source configuration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.7
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• pp.12-17
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• 2006

Longitudinal static stability and steady aerodynamic characteristics of wings flying over nonplanar ground surfaces (rail and channel) are investigated using the boundary-element method. For a channel with it's fence higher than the wing height, the lift and the nose-down pitching moment increase as the gap between the wingtip and the fence decreases. For a rail with it's width wider than the wing span, the lift and the nose-down pitching moment increase as the rail height decreases. Longitudinal static stability of a single wing flying over nonplanar surfaces is worse than the case of the flat ground. In case of tandem wings, longitudinal static stability of the wings flying over the channel is better than the case of the flat ground. It is believed that the present results can be applied to the conceptual design of high-speed ground transporters.

• Journal of Multimedia Information System
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• v.3 no.4
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• pp.135-140
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• 2016

To improve the throughput of Device-to-Device (D2D) communication, we focus on the scenario where D2D pair can reuse multi-channel of cellular communication. However, as sharing same channel with cellular communication can cause interference between D2D communication and cellular communication, a proper interference management is needed. In this paper, we propose interference-based channel allocation to select the channels to be used by D2D communication and a solution from game theory perspective to optimize the D2D communication throughput under multi-channel as well as guarantee the interference from it to cellular network. The simulation results verify the stability of the proposed method.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.