• 가정과삶의질연구
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• 제22권5호
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• pp.59-73
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• 2004

Since 1980s' Korea had a great change on the housing culture by the supply of multi-family housing stock both on the macro-social and micro-social aspects. The purpose of this study was to examine the changes and the characteristics of housing environments which were estimated its modernization, and to examine the personal life under the change of housing environments. So I would like to revaluation the characteristics of modernization between the 1980s' and 1990s'. Therefore references were made to various papers, reports, the statistical data, newspaper reports, advertisements and magazines during that period. As a result, this paper came to the remarks as follows: 1. The success of modernization on the housing environments since 1980s' was the Quantitative growth of housing supply by multi-family housing. In spite of this, the Quantitative growth of housing supply and the improvement in Quality like housing space per person had the characters which was 'out of valence on the division'. 2. The Qualitative improvement of modem housing life by the development of housing industries could be said the improvement owing to develop of facilities and equipments. The introduction of up-to-date facilities and equipments realized the convenience and the rationality of living in the house. Although the improvement on the physical things deteriorated the modernized spaces to uniform things by commercial strategies. 3. The life in the multi-family housing which gives protection to personal privacy was settle down on the extremely individualized life without common things within the neighbors. Multi-family housing which was a production of process of modernization came true the growth in an appearance and the variety in the inside, but for the aspect of residents' everyday life in the multi-family housing, the Korean traditional relationship was collapsed and a sense of incompatibility within the residents was created.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• 한국재료학회지
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• 제20권10호
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• pp.513-517
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• 2010

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.770-775
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• 2002

We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.67-74
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• 2002

A phosphor for Plasma Display Panel, BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$, showing a blue emission band at about 450nm was prepared by a solid-state reaction using BaCO$_3$, $Al_2$O$_3$, MgO, Eu$_2$O$_3$ as starting materials wish flux AlF$_3$. The study of the behaviour of Eu in BAM phosphor was carried out by the photoluminescence spectra and the Rietveld method with X-ray and neutron powder diffraction data to refine the structural parameters such as lattice constants, the valence state of Eu, the preferential site of Mg atom and the site fraction of each atom. The phenomenon of the concentration quenching was abound 2.25~2.3wt% of Eu due to a decrease in the critical distance for energy transfer of inter-atomic Eu. Through the combined Rietveld refinement, R-factor, R$_{wp}$, was 8.11%, and the occupancy of Eu and Mg was 0.0882 and 0.526 at critical concentration. The critical distance of Eu$^{2+}$ in BAM was 18.8$\AA$ at 2.25% Eu of the concentration quenching. Furthermore, c/a ratio was decreased to 3.0wt% and no more change was observed over that concentration. The maximum entropy electron density was found that the modeling of $\beta$-alumina structure in BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$correct coincided showing Ba, Eu, O atoms of z= 1/4 mirror plane.e.ane.e.

• Archives of Metallurgy and Materials
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• 제67권4호
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• pp.1469-1473
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• 2022

Tungsten diselenide (WSe₂) is one of the promising transition metal dichalcogenides (TMDs) for nanoelectronics and optoelectronics. To enhance and tune the electronic performance of TMDs, chemical functionalization via covalent and van der Waals approaches has been suggested. In the present report, the electric and structural transition of WSe₂ oxidized by exposure to O₃ is investigated using scanning tunneling microscopy. It is demonstrated that the exposure of WSe₂/high-ordered pyrolytic graphite sample to O₃ induces the formation of molecular adsorbates on the surface, which enables to increase in the density of states near the valence band edge, resulting from electric structural modification of domain boundaries via exposure of atomic O. According to the work function extracted by Kelvin probe force microscopy, monolayer WSe₂ with the O₃ exposure results in a gradual increase in work function as the exposure to O₃. Therefore, the present report demonstrates the potential pathway for the chemical functionalization of TMDs to enhance the electric performance of TMDs devices.

• Nuclear Engineering and Technology
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• 제28권2호
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• pp.118-128
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• 1996

0$\leq$y$\leq$0.33 범위의 조성을 가진 $U_{1-y}Er_{y}O_{2{\pm}x}$ 고용체의 격자상수를 least-squares method에 의해 구하였다. 고용체의 격자상수는 Er의 첨가량이 증가함에 따라 다음과 같이 직선적으로 감소하였다 : a($\AA$)=5.4695-0.220y, (0$\leq$y$\leq$0.33). $U_{1-y}Er_{y}O_2$고용체에서 Er 함량에 대한 격자상수의 변화계수, y=-0.220은 $Er^{3+}$ 의 첨가에 따른 전기적 중성을 만족하기 위해 고용체내에서 $U^{5+}$ 또는 $U^{6+}$ 이온이 각각 존재한다고 가정하여 계산된 값, y =-0.273, -0.156의 사이에 있다. $U_{1-y}Er_{y}O_2$ 고용체와 $UO_{2+x}$ 의 산소포텐샬을 산소분압 $10^{-14}$ -$10^{-3}$, 온도 1200~$1500^{\circ}C$에서 thermogravimetric method에 의해 측정하였다. $CO_2$/CO 혼합가스로써 TGA내의 산소분압을 조절하였으며, 고온산소센서를 사용하여 $Po_2$ 값을 측정하였다. (equation omitted) 값은 1200~$1500^{\circ}C$ 범위에서 y=0.06인 고용체의 경우 -360부터 -270H1mo1e, 그리고 y=0.20인 고용체에서는 -320부터 -220kJ/mo1e까지 각각 급격하게 변하는 것으로 나타났다. $U_{1-y}Er_{y}O_{2{\pm}x}$ 고용체에서 Er의 함량이 낮은 경우에는 $U^{5+}$ $U^{4+}$ model이 산소포텐샬 데이타에 접근하는 것으로 나타났으나, y=0.06 이 상인 경우에는 평균 우라늄 원자가모델에 의해서 산소 포텐샬의 변화를 설명할 수 없었다.

• 한국자기학회지
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• 제26권2호
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• pp.39-44
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• 2016

대표적 열전물질인 비스무스 텔루라이드에 자성원자를 도핑한 합금에 대한 구조 및 전자적 그리고 자기적 성질에 관한 연구는 고효율 열전물질의 개발이라는 목적뿐만 아니라 특이한 자기적 상호작용 규명 및 위상절연체 분야에서도 큰 관심을 끌고 있다. 본 연구에서는 희토류 원자로서 매우 국소화된 f 전자를 갖는 Gd이 Bi을 치환하여 도핑된 비스무스 텔루라이드 합금의 자성 안정성을 밀도범함수(Density Functional Theory)에 입각하여 제일원리적으로 연구하기 위하여 모든 전자(all-electron) FLAPW(full-potential linearized augmented plane-wave) 방법을 이용하여 전자구조 계산을 수행하였다. 전자간 교환-상관 상호작용은 일반기울기 근사법(Generalized Gradient Approximation)을 도입하여 계산하였으며, 국소화된 f 전자를 기술하는 데 필요한 Hubbard+U 보정과 스핀-궤도 각운동량 상호작용은 제2 변분법적 방법을 이용하여 고려하였다. 계산 결과, 강자성 안정성을 보이는 Gd 덩치계와 다르게 이 합금은 강자성과 반강자성의 총에너지 차이가 ~1 meV/Gd 정도의 아주 작은 값으로 얻어져서, 그 자성 안정성은 결함이나 strain 등에 의한 구조변화에 민감하게 의존하여 변할 수 있음을 알 수 있었다. 특히 Gd 스핀자기모멘트는 덩치에서의 값에 비해 감소하였고, Gd에 가장 가까운 Te에 유도 자기모멘트가 형성되는 것으로 미루어 Te를 매개로 한 자성상호작용이 자성 안정성을 결정하는 데에 중요한 역할을 하는 것으로 예측할 수 있었다.

• 한국재료학회지
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• 제11권10호
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• 공업화학
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• 제8권6호
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• pp.954-959
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• 1997

$Sr_{1-X}M_XFeO_{3-y}$ 계에서 (M=Ca), x=0.1, 0.2, 0.3, 0.4, 0.5에 대응하는 페로브스카이드계 고용체를 공기중, 1473K에 18시간 동안 열처리하여 합성하였다. X-선회절분석 결과 모든 고용체는 단순 입방정계를 나타내며, x=0.3까지는 x값의 증가에 따라 단위세포의 부피가 감소하고, x=0.4 이후에는 급격히 증가한다. 모어염 분석에 의하여 각각의 조성에 대한 $Fe^{4-}$ 이온의 몰비($\tau$값), 산소공위의 양(y값) 및 비화학양론적 화학식을 결정하였다. TG/DTA 실험(온도범위:300~1173K) 결과 x=0.1, 0.2인 시료는 3-y값이 감소하며, 냉각시 3-y값이 거의 가역적인 증가 경향을 보였다. $x{\geq}0.3$인 시료는 가역적인 무게의 변화를 보이지 않았으며, 냉각과정에서 3-y값은 거의 2.5를 유지하였다. 상대적으로 낮은 온도범위에서 모든 시료의 전기전도도 값은 반도성 범위에서 변화하였다. 그리고 일정한 온도에서의 전도도는 x값의 증가에 따라 감소하였다. 본 훼라이트 계의 전도도 메카니즘은 혼합원자가 상태 사이의 전도성 전자의 건너뜀 모형으로 제안할 수 있을 것이다. 고온에서 각 시료의 전도성은 금속성으로 변화하였다.