• 자원환경지질
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• 제27권6호
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• pp.537-548
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• 1994

The Weolyu gold-silver deposits at Hwanggan, Chungcheongbukdo, is of a late Cretaceous $(74.24{\pm}1.63Ma)$ epithermal vein-type, and is hosted in the quartz porphyry of late Cretaceous age. Based on mineral paragenetic sequence interpreted from vein structure and mineral assemblages, three stages mineralization were distinguished. A variety of ore minerals occurs including pyrite, sphalerite, chalcopyrite, galena with small amount of electrum, native silver, argentite, pearceite, sb-pearceite, argyrotite. The gangue minerals are quartz, rutile, calcite, apatite, fluorite and rhodochrocite. Wall-rock alteration such as pyritization, chloritization, sericitization, silicification is observed near the quartz veins. Au-Ag minerals were crystallized at middle and late stage of the two mineralization sequences. Results from the analysis of fluid inclusion and thermodynamic calculation indicate that Au-Ag mineral deposits were formed primarily by cooling and dilution of hydrothermal fluids($165{\sim}313^{\circ}C$, 0.4~2.4wt.% equivalent NaCl) with some degree mixing of meteoric water.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.

• 대한금속재료학회지
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• 제49권11호
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• pp.900-904
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• 2011

We have synthesized core-shell structured nanocrystals based on chalcopyrite-type $Cu_{0.2}InS_2$. The photoluminescence of the nanocrystals shows a significant blueshift in the emission wavelength by shell capping with ZnS layers. This shift can be explained with the compressive stress to core nanocrystals applied by the formation of a ZnS shell layer with a large lattice mismatch with the core. In this study, the emission wavelength could be tuned by changing the composition of the shell layers. Nanocrystals with emission wavelength ranging from 575 nm through 630 nm were synthesized by varying the portion of cadmium compared with zinc in the shell layers.

• 자원환경지질
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• 제31권6호
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• pp.463-472
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• 1998

이 연구는 과테말라 에스탄시아 데 라 비르겐 (Estancia de la Virgen) 지역에 분포하는 광화대의 산상과 광물특성을 밝혀내기 위해 수행되었다. 이 연구를 위해 1:2,000 축척의 정밀광상 지질조사가 이루어졌다. 금-은 광화작용은 산 아구스틴 (San Agustin) 단층과 카바나스 (Cabanas) 단층사이의 단층 블럭내에 발달하며 단층구조에 의한 규제를 받았다. 금은 미량에서 부터 최고 72 g/t, 은은 미량에서 초고 180 g/t까지의 품위를 보인다. 정밀광상 지질조사에 의하면 석영맥은 북동방향으로 연장 500 m 이상 추적되며 연속성은 불량하지만 1,000 m 이상 연장되는 양상을 보인다. 석영맥에서의 광물생성순서는 3개 단계를 나눌 수 있다. 1단계에는 황철석, 방연석, 섬아연석, 황동석이 일차 금-은 광물과 수반되며 2단계에는 휘동석, 코벨라이트, 리나라이트와 같은 Cu-Bi-Au-Ag 황화광물이 형성되었으며 이들은 대체로 방연석이나 황동석의 미세구조에 침착-부화되었다. 3단계에는 방연석, 섬아연석의 탄산염화작용, 방연석의 표성부화작용이 지표환경에서 일어났다. 이 과정에서 용탈된 일부 은이 지하수면 근처에서 산화작용이 일어나는 동안 동광석이나 방연석에 침착되었다. 섬아연석과 황동석에서 각기 Fe와 Zn의 함량이 적은 것은 이들 광물이 비교적 저온에서 형성되었음을 의미하며 이는 이전에 연구된 유체포유물의 균일화온도와도 일치한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.440-440
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• 2012

Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• 자원환경지질
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• 제36권6호
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• pp.391-405
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• 2003

대봉 금-은광상은 선캠브리아기 경기육괴의 호상 또는 화강편마암내에 발달된 단열대(NE, NW)를 따라 충진한 중열수 괴상석영맥광상이다. 광석광물의 산출조직과 공생관계에 의하면, 이 광상의 광화작용은 여러번의 단열작용에 의해 형성된 괴상백색석영맥(광화I시기)과 투명석영시기(광화II시기)로 구성된다. 광화I기는 3회의 substages로 구분된다. 각 substage의 광석광물은 다음과 같다: 1) 광화I시기 조기=자철석, 자류철석, 유비철석, 황철석, 섬아연석, 황동석, 2) 광화I시기 중기=자류철석, 유비철석, 황철석, 백철석, 섬아연석, 황동석, 방연석, 에렉트럼과 3) 광화I시기 말기=황철석, 섬아연석, 황동석, 방연석, 에렉트림, 휘은석. 광화II시기의 광석광물로는 황철석, 섬아연석, 황동석, 방연석 및 에렉트럼이 관찰된다. 유체포유물의 체계적 연구에 의하면, 물리-화학적 상태가 상반되는 유체가 관찰된다: 1) 광화 I시기 조기와 중기 광석광물 정출과 관련된 $H_2O-CO_2-CH_4-NaCl{\pm}N_2$ 유체(조기=균일화온도: 203∼388^{\circ}C$, 압력: 1082∼2092 bar, 염농도: 0.6∼13.4wt.%, 중기=균일화온도: 215∼280^{\circ}C$, 염농도: 0.2∼2.8wt.%), 2) 광화I시기 말기와 광화II시기 광석광물과 관련된 $H_2O-NaCl{\pm}CO_2$ 유체(광화I시기 말기=균일화온도: 205∼2$88^{\circ}C$, 압력: 670bar, 염농도: 4.5∼6.7wt.%, 광화II시기=균일화온도: 201∼358^{\circ}C$, 염농도: 0.4∼4.2wt.%)이다. 광화I시기 조기의 $H_2O-CO_2-CH_4-NaCl{\pm}N_2$계 유체는 유체압력의 차이에 의해 CO_2$ 상분리가 일어났으며 광화작용이 진행됨에 따라 $H_2O-NaCl{\pm}CO_2$계 유체로 진화되었다. 또한 여기에 기원이 다른 $H_2O$-NaCl계 유체의 유입에 의해 혼입 및 희석작용으로 염농도의 감소가 있었다고 생각된다. 광화II시기 좀더 가열된 $H_2O-NaCl{\pm}CO_2$ 계 유체는 불혼합, 희석 및 냉각작용이 있었던 것으로 생각된다. 열수용액의 {\gamma}^{34}$S__{H2S}$ 값은 3.5∼7.9{\textperthansand}$로서 황은 주로 화성기원이지만 부분적으로 모암내의 황에서도 기원되었다고 생각된다. 광화유체의 산소({\gamma}^{18}O_{H2O}$)와 수소({\gamma}$D)안정동위원소값이 광화I시기에는 각각 11∼9.${\textperthansand}$, -92∼-86${\textperthansand}$, 광화 II시기에는 각각 0.3${\textperthansand}$(${\gamma}^{18}O_{H2O}$),-93${\textperthansand}$({\gamma}$D)이며, 리본-호상구조를 보이는 것으로 보아 대봉광상의 광화유체에 대한 기원과 진화과정을 두 가지로 생각할 수 있다. 1) 마그마유체로부터 광화작용이 진행됨에 따라 계속적인 순환수의 혼입이 있었으며 2) 조기 마그마${\pm}$변성유체에서 유체압력의 차에 의해 $CO_2$ 상분리와 더불어 계속적인 ${\gamma}$D가 높은 순환수의 혼입이 있었던 것으로 해석할 수 있다.있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1605-1608
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• 2004

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2{\theta}$) of 27.7$^{\circ}$ was well made by SEL method at annealing temperature of 250 $^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant a and grain size of the thin film in S ambience were appeared a little larger than those in only vacuum. The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}$m respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.