• 한국정보컨버전스학회:학술대회논문집
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• 한국정보컨버전스학회 2008년도 International conference on information convergence
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• pp.99-102
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• 2008

Mineralogical studies of ore and alteration minerals have been conducted for the Hugo Dummett porphyry copper deposit. The Hugo Dummett porphyry copper gold deposit is located in the South Gobi region, Mongolia and currently being explored. This deposit divided into the Cu-rich Hugo Dummett South and the Cu-Au-rich Hugo Dummett North deposits. The Hugo Dummett deposits contain 1.08% copper(1.16 billion tonnes in total) and 0.23 g/t gold(Oyunchimeg et al., 2006). Copper-gold mineralization at these deposit are centered on a high-grade copper(typically>2.5%) and gold(0.5-2 g/t) zone of intense quartz stockwork veining. The high grade copper and gold zone is mainly within the Late Devonian quartz monzodiorite intrusions and augite basalt, also locally occurs in dacitic rocks. Intense quartz veining forms a lens up to 100 m wide hosted by augite basalt and partly by quartz monzodiorite. Although many explorations have been carried out, only a few scientific works were done in the Oyu Tolgoi mining area. Therefore the nature of copper-gold mineralization and orgin of the deposit is not fully understood. Copper-gold mineralization in the Hugo Dummett deposits occurs in dominantly quartz monzodiorite and minor augite basalt, dacitic rocks and locally biotite granodiorite. Chalcopyrite, pyrite, bornite, molybdenite, tennantite, tetrahedrite, enargite, sphalerite, chalcocite, covellite, eugenite, galena and gold occur as main ore minerals in the Hugo Dummett North and South deposits. These sulfides occur as: (1) a vague vein-like trail 1-3cm long and 2-3 mm wide, (2) minute, discontinuous cracks within quartz(micron scales), and (3) irregular blebs/spots(micron scales)and (4) disseminated within the sericite and plagioclase, commonly concentrated in the quartz. Sulfide minerals commonly display as a replacement, intergrown and minor exsolution texture in the both of the Hugo Dummet deposits.

• 한국재료학회지
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• 제23권11호
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• pp.638-642
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• 2013

Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.

• 한국재료학회지
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• 제20권8호
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• pp.412-417
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• 2010

Mo thin films were used for the back electrode because of the low resistivity in the Mo/$CuInGaSe_2$ contact in chalcopyrite solar cells. $1\;{\mu}m$ thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied and the relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of the Mo thin films, were investigated. The resitivity increased from $24\;{\mu}{\Omega}{\cdot}cm$ to $11833\;{\mu}{\Omega}{\cdot}cm$; this was caused by the increased surface defect and low crystallinity as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The surface morphologies of the Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries, as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The changes of reflectances in the visible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. The reflectance in the visible light range showed the highest value of 45% at $3{\times}10^{-3}\;Torr$ and decreased to 18.5% at $3{\times}10^{-2}\;Torr$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.705-705
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• 2013

CIGS 박막태양 전지는 I-III-VI Chalcopyrite 결정구조를 가진 화합물 반도체 태양전지로 인위적인 밴드갭 조작을 통하여 효율 향상에 용이하다. 4원소 화합물인 CIGS 광흡수층의 대표적인제조 방법으로는 co-evaporation 공정법이 있다. 동시 증발법은 CIGS 결정을 최적화하기 위하여 박막이 증착되는 동안 기판의 온도를 3단계로 변화시켜주는 3-stage 공정을 통하여 제작된다. 일반적으로 CIGS 박막태양전지는 전면전극으로 투명전도막이 사용되며 높은 광투과성과 전기전도성을 가져야 한다. 투명전도막의 광학적, 전기적 특성은 CIGS 박막태양전지의 효율에 영향을 미치기 때문에 최적화된 조건이 요구된다. 본 연구에서는 CIGS 광흡수층은 Ga/(In+Ga)=0.31, Cu/(In+Ga)=0.86으로 최적화 시켰으며, 투명전도막은 Ga이 도핑된 ZnO박막을 RF 마그네트론 스퍼터링법을 이용하여 증착하였다. CIGS 박막 태양전지 직렬저항 성분인 투명 전도막의 비저항이 $4.46{\times}{\square}10{\square}-3{\square}$(${\Omega}$-cm)에서 $9.3{\times}{\square}0{\square}-4{\square}$(${\Omega}$-cm) 으로 변화함에 따라 Efficiency가 9.67%에서 16.47%으로 증가하였으며, Voc가 508 mV에서 596 mV으로, Jsc가 29.27 mA/$cm^2$에서 37.84 mA/$cm^2$으로, FF factor가 64.99%에서 72.96%로 증가하였다. 이에 따른 투명 전도막의 전기적, 광학적 특성을 통해 CIGS 박막태양전지에 미치는 영향에 대해 조사하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.27.1-27.1
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• 2009

Chalcopyrite구조의CIS 화합물은 직접천이형 반도체로서 높은 광흡수 계수 ($1\times10^5\;cm^{-1}$)와 밴드갭 조절의 용이성 및 열적 안정성 등으로 인해 고효율 박막 태양전지용 광흡수층 재료로 많은 관심을 끌고 있다. CIS 계 물질에 속하는 $Cu(InGa)Se_2$ (CIGS) 태양전지의 경우 박막 태양전지 중 세계 최고 효율인 20%를 달성한 바 있으며, 이는 기존 다결정 웨이퍼형 실리콘 태양전지의 효율에 근접하는 수치이다. 그러나 이러한 우수한 효율에도 불구하고 박막 증착시 동시증발장치 혹은 스퍼터링장치와 같은 고가 진공장비를 사용하게 되면 공정단가가 높을 뿐만 아니라 사용되는 재료의 20-50%의 손실을 감수해야만 한다. 또한 대면적 Cell제작에 어려움이 있기 때문에 기술개발 이후의 상용화 단계를 고려할 때 광흡수층 박막 제조 공정단가를 획기적으로 낮출 수 있고 대면적화가 용이한 신 공정 개발이 필수적이다. 이러한 관점에서 비진공 코팅방법에 의한 CIS 광흡수층 제조 기술은 CIS 태양전지의 저가화 및 대면적화를 가능케 하는 차세대 기술로 인식되고 있고 최근 급속한 발전을 이루고 있는 미세 입자 합성, 제어 및 응용 기술에 부합하여 많은 세계 연구기관 및 기업체에서 활발히 연구를 진행하고 있다. 비진공 방식에 의한 CIS 광흡수층 제조 기술은 전구체 물질의 형태에 따라 크게 입자형 전구체를 사용하는 방법과 용액 전구체를 사용하는 방법으로 나눌 수 있다. 본 연구에서는 용액 전구체를 paste 공정으로 실험하였다. 이는 용액전구체 물질 제조가 입자형 전구체 제조에 비해 매우 간단하고, 전구체 물질 내 구성원소의 원자비를 쉽게 조절할 수 있다는 장점 및 사용효율이 높아 소량의 source로도 박막 제작이 가능해 공정 단가 절감에 큰 효과가 기대되기 때문이다. 실험에 사용 된 용액전구체는 $Cu(NO_3)$ 및 $InCl_3$, $Ga(NO_3)$를 Cu, In, Ga 출발 물질로 선정하여 이를 메탄올에 완전히 용해시켜 binder인 셀룰로오즈와 메탄올을 섞은 용액과 혼합하여 전구체 슬러리를 형성하였다. 이 슬러리를 paste공정으로 precursor막을 입히고 저온 건조 후 Se 분위기에서 열처리하여 CIGS박막을 얻을 수 있었다. 박막의 특성을 XRD, SEM, AES, TGA등으로 분석하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.275-281
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• 2003

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Current Photovoltaic Research
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• 제3권1호
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• pp.16-20
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• 2015

Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.

• 자원환경지질
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• 제21권3호
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• pp.223-234
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• 1988

A large number of gold and/or silver-bearing quartz veins occur in or near Mesozoic granite batholith elongated in a NE-SW direction within the Chungcheong Province. Precambrian schists and gneisses, and Jurassic and Cretaceous granitic rocks serve as hosts for gold and/or silver deposits. On the basis of Ag/Au total production and ore grade ratio, 15 mines may be divided into three major groups: gold-dominant deposits, gold-silver deposits, and silver-dominant deposits. The chemical composition of electrum from skarn deposit (Geodo mine), alaskite-type deposit (Geumjeong mine) and 15 vein deposits was summarized. It was found that the Au content of electrum for vein deposits ranging from 5.2 to 86.5 is lower than that for skarn and alaskite deposits. Among 15 vein deposits, the composition of electrum associated with pyrrhotite is relatively high and has a narrow range of 40.8 to 86.5 atomic % Au, but the Au content of electrum with pyrite is in range of 5.2 to 82.8 atomic %, and is clearly lower than that with pyrrhotite. The grouping of ages for these mines indicates that gold and/or silver mineralizations occurred during two periods in the Mesozoic. Daebo igneous activities are restricted to gold mineralization in the range of 158 to 133 Ma, whereas Bulgugsa igneous activities are related to gold and/or silver mineralization ranging from 108 to 71 Ma. Generally speaking, Jurassic gold-dominant veins have many common characteristics; notably prominent association with pegmatites, simply massive vein morphology, high fineness in the ore concentrates, rarity of silver minerals, and a distinctively simple mineralogy, including sphalerite, galena, chalcopyrite, pyrrhotite and/or pyrite. Although individual deposits exhibit widely differing diversity, Cretaceous gold-silver and silver-dominant veins are characterized by features such as complex vein, low to medium fineness in the ore concentrates and abundance of silver minerals including Ag sulfosalts, Ag sulfides, Ag tellurides and native silver.

• 자원환경지질
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• 제31권3호
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• pp.171-183
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• 1998

남극 킹죠지섬 바톤반도에는 신생대 제3기의 화산암류, 화산성 쇄설암류, 그리고 이들을 관입한 화강섬록암이 분포한다. 화강섬록암과 주변 화산암류에는 양기석, 녹염석, 녹니석, 방해석으로 특징지워지는 프로필리틱 열수변질대가 광범위하게 발달하며, 변질대에서는 황철석, 황동석, 반동석 등의 황화광물이 산점상 혹은 세맥상으로 산출된다. 화강섬록암 주변 열수변질작용의 특성에 관한 연구결과를 요약하면 다음과 같다; (1) 화강섬록암은 칼크알칼리 계열의 천소관입 암상이며 동 함유량이 높다. (2) 화강섬록암의 주변을 중심으로한 상대적으로 높은 온도 유형의 프로필리틱 변질대가 발달하며 동-황화광물의 산출이 흔하다. (3) 황화광물은 산화환경 조건의 광화작용으로 가벼운 황동위원소 조성을 보인다. (4) 화강섬록암내 석영과 장석은 가벼운 산소동위원소 조성을 보이며 열수변질작용으로 비평형적인 동위원소 조성을 보인다. 이는 바톤반도 열수변질작용 및 광화작용이 화강섬록암체의 관입과 성 인적으로 밀접한 관련이 있음을 시사한다.

• 한국전기전자재료학회논문지
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• 제26권7호
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• pp.503-509
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• 2013

In this study, $Cu(In_{1-x},Ga_x)Se_2$ (CIGS) thin films were prepared on the Mo coated soda-lime glass by the DC magnetron sputtering and a subsequent selenization process. For the selenization process, selenization rapid thermal process(RTP) with cracker cell, which was helpful to smaller an atomic of Se, was adopted. To make CIGS layer, they were then annealed with the cracked Se. Based on this selenization method, we made several CIGS thin film and investigated the effects of In deposition time, and selenization time. Through x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM), it is found that the Mo/In/CuGa structure and the high sputtering power shows the dominant chalcopyrite structure and have a uniform distribution of the grain size. The CIGS films with the In deposition time of 5 min has the best structure due to the smooth surface. And CIGS films with the selenization time of 50 min show good crystalline growth without any voids.