• 한국산업정보학회논문지
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• 제20권1호
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• pp.57-62
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• 2015

최근 인체에서 방출되는 적외선을 감지하여 질병부위를 진단하는 의료기기로써 체열촬영이 가능한 열화상카메라가 활용되고 있다. 본 연구에서는 칼코지나이드 소재 적외선 성형렌즈를 채용한 열화상카메라 시제품을 제작하고, 열영상 분석을 통해 체열진단 장비로써의 시제품 성능을 검증하였다. 열화상카메라 시제품은 $20{\sim}50^{\circ}C$에서 체열이 촬영됨을 확인 하였고, 온도분해능(NEDT) 측정결과 87.7mK의 우수한 결과를 나타냈다. 이를 통해 칼코지나이드 성형렌즈를 채용한 열화상카메라 시스템이 체열진단을 위한 의료기로 사용가능함을 확인 하였다.

• 한국세라믹학회지
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• 제41권9호
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• pp.696-702
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• 2004

찰코지나이드 유리에 첨가된 희토류 원소의 4f 전자 궤도를 구성하는 여기 상태 에너지 준위의 수명은 기지 재료의 단거리 구조 변화뿐만 아니라 중거리 구조 변화에도 매우 민감하다 Pr$^{3+}$ 이온을 첨가한 다양한 조성의 Ge-Sb-Se 계열 찰코지나이드 샘플을 대상으로 Pr$^{3+}$ ($^3$F$_3$, $^3$F$_4$)\$\longrightarrow$$^3$H$_4$천이로부터 발생하는 1.6$\mu\textrm{m}$ 형광의 수명을 측정한 결과, 해당 형광 수명은 mean coordination number가 -2.67이 되는 조성에서 최대 값을 나타내었다. 이는 유리의 구조가 2차원 구조에서 3차원 구조로 전환됨에 따라 희토류 이온의 분포도가 변화하기 때문이며 소위 topological structure 모델과 chemically ordered network모델로써 공유 결합성이 강한 찰코지나이드 유리에 첨가된 희토류 이온의 발광 특성에 대한 해석이 가능하였다. 이러한 결과는 희토류 원소의 분포 및 형광 수명을 단지 찰코지나이드 재료의 성분비만으로 예측할 수 있다는 새로운 관점이 타당함을 의미한다

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.675-676
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• 2009

• ETRI Journal
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• 제31권6호
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• pp.667-674
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• 2009

Terahertz time-domain spectroscopy has been used to study the optical and dielectric properties of three chalcogenide glasses: $Ge_{30}As_8Ga_2Se_{60}$, $Ge_{35}Ga_5Se_{60}$, and $Ge_{10}As_{20}S_{70}$. The absorption coefficients ${\alpha}({\nu})$, complex refractive index n(${\nu}$), and complex dielectric constants ${\varepsilon}({\nu})$ were measured in a frequency range from 0.3 THz to 1.5 THz. The measured real refractive indices were fitted using a Sellmeier equation. The results show that the Sellmeier equation fits well with the data throughout the frequency range and imply that the phonon modes of glasses vary with the glass compositions. The theory of far-infrared absorption in amorphous materials is used to analyze the results and to understand the differences in THz absorption among the sample glasses.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.20-23
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• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• 한국세라믹학회지
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• 제33권4호
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• pp.425-431
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• 1996

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.257-261
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• 2015

In this study, we fabricated a thermoelectric module made of nanoparticles (NPs) and glass fibers investigated its thermoelectric characteristics. P-type HgTe and n-type HgSe NPs synthesized by colloidal method were used as thermoelectric materials and glass fibers were used as spacers between the hot and cold electrodes of the thermoelectric module. In the module, the average Seebeck coefficients of the HgTe and HgSe NPs were 1260 and $-628{\mu}V/K$, respectively. The p-n module generated about a voltage of 11.9 mV and showed a power density of $1.6{\times}10^{-5}{\mu}W/cm^2$ at a temperature difference of 7.5 K.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.467-472
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• 1997

In this study, we investigated the thickness dependence of thermal bleaching(TB) effect as well as photo-induced scalar phenomena, such as photodrakening(PD) effect and photorefraction(PR) change, in chalcogenide A $s_{40}$ G $e_{10}$S $e_{15}$ $S_{35}$ thin films. We found that when these films were exposed for 15 minutes using blue-pass filtered Hg lamp(~4300$\AA$) after annealing for 30 minutes around the glass transition temperature Tg(20$0^{\circ}C$), the refractive index change ($\Delta$n) was varied up to 0.02~0.46 according to each thickness condition and the optical energy gap ($\Delta$ $E_{op}$ ) was shifted to a longer wavelength of approximately 0.67eV, especially for 1000$\AA$-thickness. Also, the TB PD effects have been understood by the results related to optical absorption characteristics. The TB effect could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, the PD effect could be understood as due to the enhancement of disorder since U and the slope of Urbachs tail(1/F) around an absorption edge were decreased by exposing.ing.n edge were decreased by exposing.