• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.335-340
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• 2001

$Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.10
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• pp.1050-1060
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• 2009

In this paper, a X-Band T/R-module for SAR(Synthetic Aperture Radar) systems based on active phased array antennas is designed and fabricated. The T/R modules have a and width of more than 800 MHz centered at X-Band and support dual, switched polarizations. The output power of the module is 7 watts over a wide bandwidth. The noise figure is as low as 3.9 dB. Phase and amplitude are controlled by a 6-bit phase shifter and a 6-bit digital attenuator, respectively. Further the fabricated T/R module has est and calibration port with directional coupler and power divider. Highly integrated T/R module is achieved by using LTCC(Low Temperature Co-fired Ceramic) multiple layer substrate. RMS gain error is less than 0.8 dB max. in Rx mode, and RMS phase error is less than $4^{\circ}$ max. in Rx/Tx phase under all operating frequency band, or the T/R module meet the required electrical performance m test. This structure an be applied to active phase array SAR Antennas.

• Journal of the Korean Society for Nondestructive Testing
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• v.29 no.5
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• pp.450-457
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• 2009

Periodical thermal shock can introduce defects in thermal barrier coating made by layers of CoNiCrAlY bond coating(BC) and $ZrO_2-8wt%Y_2O_3$ ceramic top coating(TC) on Inconel-738 substrate using plasma spraying. Thermal shock test is performed by severe condition that is to heat until $1000^{\circ}C$ and cool until $20^{\circ}C$. As the number of cycle is increased, the fatigue by thermal shock is also increased. After test, the micro-structures and mechanical characteristics of thermal barrier coating were investigated by SEM, XRD. The TGO layer of $Al_2O_3$ is formed between BC and TC by periodical thermal shock test, and its change in thickness is inspected by eddy current test(ECT). By ECT test, it is shown that TGO and micro-crack can be detected and it is possible to predict the life of thermal barrier coating.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.114-124
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• 2011

In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.167-175
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• 2018

Natural gas is a clean fuel that discharges almost no air-contaminating substances. This study examined the simultaneous reduction of $CH_4$ and NOx of NGOC/LNT catalysts for CNG buses related to the improvement of the $de-CH_4/NOx$ performance, focusing mainly on identifying the additive catalysts, loading of the washcoat, stirring time, and types of substrates. The 3wt. % Ni-loaded NGOC generally exhibited superior $CH_4$ reduction performance through $CH_4$ conversion, because Ni is an alkaline, toxic oxide, and exerts a reducing effect on $CH_4$. A excessively small loading resulted in insufficient adsorption capacity of harmful gases, whereasa too high loading of washcoat caused clogging of the substrate cells. In addition, with the economic feasibility of catalysts considered, the appropriate amount of catalyst washcoat loading was estimated to be 124g/L. The NOx conversion rate of the NGOC/LNT catalysts stirred from $200^{\circ}C$ to $550^{\circ}C$ for 5 hours showed 10-15% better performance than the NGOC/LNT catalysts mixed for 2 hours over the entire temperature range. The NGOC/LNT catalysts exhibitedapproximately 20% higher $de-CH_4$ performance on the ceramic substrates than on the metal substrates.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of the Korean Electrochemical Society
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• v.7 no.2
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• pp.94-99
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• 2004

Anode-supported flat tubular solid oxide fuel cell (SOFC) was investigated to increase the cell power density. The anode-supported flat tube was fabricated by extrusion process. The porosity and pore size of Ni/YSZ ($8mol\%$ yttria-stabilized zirconia) cermet anode were $50.6\%\;and\;0.23{\mu}m$, respectively. The Ni particles in the anode were distributed uniformly and connected well to each other particles in the cermet anode. YSZ electrolyte layer and multilayered cathode composed of $LSM(La_{0.85}Sr_{0.15})_{0.9}MnO_3)/YSZ$ composite, LSM, and $LSCF(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.7}O_3)$ were coated onto the anode substrate by slurry dip coating, subsequently. The anode-supported flat tubular cell showed a performance of $300mW/cm^2 (0.6V,\; 500 mA/cm^2)\;at\;500^{\circ}C$. The electrochemical characteristics of the flat tubular cell were examined by ac impedance method and the humidified fuel enhanced the cell performance. Areal specific resistance of the LSM-coated SUS430 by slurry dipping process as metallic interconnect was $148m{\Omega}cm^2\;at\;750^{\circ}C$ and then decreased to $148m{\Omega}cm^2$ after 450hr. On the other hand, the LSM-coated Fecralloy by slurry dipping process showed a high area specific resistance.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.3-10
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• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.81-86
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• 1993

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.695-700
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• 2018

This paper presents the development of compact and lightweight broadband power amplifier module using HMIC (Hybrid Microwave Integrated Circuit) technology that could be high-density integration for many non-packaged microwave components into the small area of a high dielectric constant printed circuit board, such as a ceramic substrate, also using the special design and fabrication schemes for the structure of minimized electromagnetic interference to obtain the homogeneous electrical performance at the wideband frequency. The results confirmed that the small signal gain has a gain flatness of ${\pm}1.5dB$ within the range of 32 to 36 dB. In addition, the output power satisfied more than 30 dBm. The noise figure was measured within 7 dB, and OIP3 (Output Third Order Intercept Point) was more than 39 dBm. The fabricated broadband power amplifier satisfied the target specification required to electrically drive the high power amplifiers of jamming generators for electronic warfare, so the actual applicability to the system was verified. Future studies will be aimed at designing other similar microwave power amplifiers in the future.