• 공업화학
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• 제30권4호
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• pp.460-465
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• 2019

본 연구에서는 각종 산업시설에서 발생하는 $H_2S$를 처리하기 위하여 금속산화물 기반의 흡착제의 활성물질 최적화 및 입상형 흡착제 제조에 관한 연구를 진행하였다. 적용되는 흡착제는 금속산화물 중 높은 물리화학적 안정성과 비교적 큰 비표면적을 가지는 $TiO_2$를 이용하여 활성물질의 종류와 함량을 다르게 제조하였다. 이러한 흡착제의 물리화학적 특성과 흡착성능과의 상관관계를 확인한 결과 활성금속 중 대표적인 알칼리 물질인 KI를 첨착한 흡착제의 흡착성능이 가장 우수하였으며, 함량과 흡착성능의 관계는 비례하지 않고 volcano plot을 나타냈다. XRD, SEM, BET 분석을 통해 특정 함량 이상부터 활성물질이 표면에 노출됨을 확인하였으며, 비표면적은 $40{\sim}100m^2/g$, 기공의 부피는 $0.1{\sim}0.3cm^3/g$의 기공 특성을 가질 때 흡착성능이 가장 우수한 것으로 판단하였다. 실 공정 적용을 위해 흡착제를 입상형으로 성형 또는 세라믹 지지체에 코팅을 진행하였으며, 성형보다는 세라믹 지지체에 흡착제를 코팅하였을 때 우수한 흡착성능을 나타내는 것으로 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 방사성폐기물학회지
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• 제11권1호
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• pp.1-9
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• 2013

파이로그린공정의 염폐기물처리과정에서 발생되는 주요 산화물 형태의 폐기물에는 희토류폐기물이 있으며 주요 구성 핵종은 Y, La, Ce, Pr, Nd, Sm, Eu, Gd 등 8종이다. 최종적인 희토류폐기물의 형태는 산화물 형태로 발생된다. 본 연구에서는 붕규산 유리계 내에서 희토류 산화물의 유리화 타당성을 평가 하기 위하여 6종의 유리조성을 개발하였다. 희토류 8핵종 혼합에 대한 solubility는 $1,200^{\circ}C$에서 25wt% 미만, $1,300^{\circ}C$에서 30wt% 미만 waste loading으로 온도 상승에 따라 증가하는 것으로 나타났으며 liquidus temperature는 균질한 유리가 형성된 20wt% waste loading에서 $950^{\circ}C$ 이하로 평가되었다. 희토류 산화물의 유리매질 내 solubility 이상에서는 희토류-oxide-silicate 결정이 생성된 유리세라믹을 이차상으로 형성하였으며 20~25wt% waste loading의 표면균질성이 양호한 유리는 용융온도 $1,200{\sim}1,300^{\circ}C$ 범위에서 점도 100 poise 이하, 전기전도도 1 S/cm 이상으로 유도가열식 저온용융로설비에서의 운전 용이성이 매우 양호한 것으로 평가되었다. 개발된 유리조성에 대한 기타 물리 화학적 특성 평가를 위한 실험들이 향후 수행될 예정이다.

• 자원환경지질
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• 제21권1호
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• pp.1-15
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• 1988

This is a study on the mineral compositions, SK numbers of refractoriness and the genesis of the clay mineral deposits in Cheonnam Province and Handong area. 1. Jindo kaolin deposits: Chief clay minerals of the deposits are kaolinite, quartz and alunite. The SK number of the ore is from $34^+$(the highest) to 27(the lowest). On the genesis of the deposits some geologists believe that the deposits were formed by the alteration of the siliceous tuff. But the deposits seems to be formed by the hydrothermal alteration of the rhyolite lava beds. This area is formed by alternative beds of tuff; and kaoline deposits. 2. Hadong area: Chief mineralogy of Hadong kaolin area is $10{\AA}$ halloysite and kaolinite. The SK number of some of the ore is up to $36^+$. The theoretic SK number of kaolinitic composition is 35. So one of the highest alumina minerals of gibbsite is formed in the ores of $36^+$ SK numbers. 3. Hampyong kaolin deposits: Most of kaolin has black color. The chief minerals are kaolinite, quartz and muscovite. Some of the kaoline contains rutile crystals. SK number ranges from 30 to 17. The kaolin deposit is formed by the transported sedimentation in lower part of the seashore. 4. Jangsan kaoline deposits: Chief minerals of the kaolin is kaolinite, quartz and muscovite. Some kaoline contains small crystals of pyrite. This area consists almost of the tuffs. Kaolin deposits also would be formed by the alteration of the tuffs. 5. Nohwado pyrophyllite deposits: Quartz and pyrophyllite are chief minerals. SK number of the ore ranges from 32 to 30. The pyrophyllite deposits would be formed by the hydrothermal alteration of the rhyolitic lava beds. This area consists of alterative beds of tuffs and rhyolitic lavas. 6. Songsuk pyrophyllite deposits: Chief minerals are quartz, kaolinite, pyrophyllite and iron oxides. In the pyrophyllite deposits egg-like inclusions of diaspore and kaolinite in composition. This area almost consists of tuffs. Several faults are developed and along the fault the tuff would begin to alter to pyrophyllite and some parts to diaspore and kaolinite nodules by the acts of hydrothermal solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Bulletin of the Korean Chemical Society
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• 제28권11호
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• pp.2089-2092
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• 2007

Tantalum-containing metal oxides, well known for their efficiency in water splitting and H2 production, have never been used in visible light driven photodecomposition of H2S and H2 production. The present work is an attempt in this direction and investigates their efficiency. A mixed metal oxide, ZnFe2Ta2O9, with the inclusion of Fe2O3 to impart color, was prepared by the conventional ceramic route in single- and double-calcinations (represented as ZnFe2Ta2O9-SC and ZnFe2Ta2O9-DC respectively). The XRD characterization shows that both have identical patterns and reveals tetragonal structure to a major extent and a minor contribution of orthorhombic crystalline system. The UV-visible diffuse reflection spectra demonstrate the intense, coherent and wide absorption of visible light by both the catalysts, with absorption edge at 650 nm, giving rise to a band gap of 1.9 eV. Between the two catalysts, however, ZnFe2Ta2O9-DC has greater absorption in almost the entire wavelength region, which accounts for its strong brown coloration than ZnFe2Ta2O9-SC when viewed by the naked eye. In photocatalysis, both catalysts decompose H2S under visible light irradiation (λ ≥ 420 nm) and produce solar H2 at a much higher rate than previously reported catalysts. Nevertheless, ZnFe2Ta2O9-DC distinguishes itself from ZnFe2Ta2O9-SC by exhibiting a higher efficiency because of its greater light absorption. Altogether, the tantalum-containing mixed metal oxide proves its efficient catalytic role in H2S decomposition and H2 production process also.