• 제목/요약/키워드: Ceramic deposition

검색결과 735건 처리시간 0.025초

솔-젤법에 의한 강유전성 PFN 박막의 제조 및 특성평가 (Fabrication and Characterization of Ferroelectric PFN Thin Film by Sol-Gel Processing)

  • 류재율;김병호;임대순
    • 한국세라믹학회지
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    • 제33권6호
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    • pp.665-671
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    • 1996
  • Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

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RF 마그네트론 스퍼터링에 의한 NiO 박막 증착시 산소 유량비가 박막의 결정 배향성에 미치는 영향 (Effects of Oxygen Flow Ratio on the Crystallographic Orientation of NiO Thin Films Deposited by RE Magnetron Sputtering)

  • 류현욱;최광표;노효섭;박용주;박진성
    • 한국세라믹학회지
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    • 제41권2호
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    • pp.106-110
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    • 2004
  • NiO 산화물 타겟을 이용한 RF 마그네트론 스퍼터로 상온에서 Si(100) 기판 위에 NiO 박막을 증착시켜, 스퍼터 가스의 산소 유량비가 NiO 박막의 결정 배향성과 표면 형상에 미치는 영향을 조사하였다. Ar 가스에서 증착된 NiO 박막은 높은결정화도와 (100)면의 우선 배향성을 나타내었으나, $O_2$ 가스에서 증착된 경우에는 (111)면의 우선 배향성을 보였으며 그 증착속도도 감소하였다. 스퍼터 가스의 $O_2$ 함량에 따른 NiO 박막의 결정성과 우선배향성 변화에 대한 요인을 고찰하였으며, 박막의 표면 형상과 거칠기의 변화를 조사하였다.

다양한 조성의 Sr 페라이트를 이용한 CO2분해 반응 특성 (Decomposition of Carbon Dioxide Using Sr Ferrites with Various Compositions)

  • 신현창;최정철;정광덕;최승철
    • 한국세라믹학회지
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    • 제40권2호
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    • pp.191-197
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    • 2003
  • 지구온난화의 주요원인인 $CO_2$의 분해를 위해 다양한 조성의 Sr 페라이트를 이용하여 $CO_2$분해능을 비교하였다. Sr 페라이트를 80$0^{\circ}C$까지 환원시킨 결과, Sr 페라이트 내 Sr 함량이 감소할수록 높은 온도에서 환원반응이 시작되었지만, 온도가 증가함에 따라 그 환원반응성은 높아졌다. 환원된 Sr 페라이트를 이용한 $CO_2$분해 반응에서는 Sr:Fe 조성비에 따라CO나 C의 생성량이 달라졌다. 이 반응에서 Sr 페라이트 내 Sr의 비율이 감소할수록 CO의 생성량은 증가하였으며, Sr의 비율이 증가할수록 페라이트 표면에 많은 양의 C가 흡착되었다. 따라서, $CO_2$분해 반응에 Sr 페라이트를 적용할 경우, 사용 조건에 따라 Sr:Fe의 조성비를 제어할 필요가 있다.

$YMnO_3$ 강유전 박막의 열처리 분위기가 결정화거동과 전기적 특성에 미치는 영향 (Effects of Annealing Atmosphere on Crystallization and Electrical Properties in $YMnO_3$ Ferroelectric Thin Films)

  • 윤귀영;김정석;천채일
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.168-173
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    • 2000
  • YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

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저손실 광도파로 제작을 위해 PECVD 법에 의해 증착된 SiON/SiO2 다층박막 (SiON/SiO2 Multilayer Deposited by PECVD for Low-Loss Waveguides)

  • 김용탁;김동신;윤대호
    • 한국세라믹학회지
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    • 제41권3호
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    • pp.197-201
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    • 2004
  • 플라즈마 화학기상증착(PECVD)법을 이용하여 Si(100) 웨이퍼에 silicon oxide(SiO$_2$)와 silicon oxynitride(SiON) 후막을 SiH$_4$, $N_2$O, $N_2$가스를 혼합하여 증착하였다. RF power와 rf bias power의 변화에 따른 SiO$_2$ 막과 SiON 막의 특성변화에 대하여 고찰하였다. RF power와 rf bias power가 증가함에 따라 굴절률은 감소하는 경향을 나타내었으며, 막의 굴절률은 1552 nm에서 1.4493-1.4952까지 변화하였다. 이와 같이 rf power가 증가함에 따라 굴절률이 감소하는 이유는 oxygen의 량이 증가하고 nitrogen의 량이 감소하여 즉, O/N 비가 증가하여 굴절률이 감소하는 경향을 나타내었다.

중간층 조건에 따른 Cr-Mo-N 막의 상형성 및 마찰마모 거동 연구 (Tribology and Phase Evolution of Cr-Mo-N Coatings with Different Interlayer Condition)

  • 양영환;여인웅;박상진;임대순;오윤석
    • 한국표면공학회지
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    • 제44권6호
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    • pp.269-276
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    • 2011
  • Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

Fabrication of Nd-Substituted Bi4Ti3O12 Thin Films by Metal Organic Chemical Vapor Deposition and Their Ferroelectrical Characterization

  • Kim, Hyoeng-Ki;Kang, Dong-Kyun;Kim, Byong-Ho
    • 한국세라믹학회지
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    • 제42권4호
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    • pp.219-223
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    • 2005
  • A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

SrTiO3기판 위에 증착한 BiFeO3박막의 강유전 및 자기적 특성 (Ferroelectric and Magnetic Properties of BiFeO3 Thin Films Deposited on SrTiO3 Substrate)

  • 이은구;김선재;이재갑
    • 한국세라믹학회지
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    • 제45권6호
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    • pp.358-362
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    • 2008
  • $BiFeO_3$ films were hetero-epitaxially grown on $SrTiO_3$ substrate with a various orientation by pulse laser deposition. $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for $BiFeO_3$ thin films grown on $SrTiO_3$ substrate comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

천연과 CVD 합성 다이아몬드의 감별을 위한 물성 연구 (Properties of the Natural and CVD Synthetic Diamonds for Identification)

  • 김연우;송정호;노윤영;송오성
    • 한국세라믹학회지
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    • 제51권4호
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    • pp.350-356
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    • 2014
  • Recently, Chemical Vapor Deposition (CVD) synthetic diamonds have been introduced to the jewelry gem market, as CVD technology has been making considerable advances. Unfortunately, CVD diamonds are not distinguishable from natural diamonds when using the conventional gemological characterization method. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. In our study, we employed optical microscopy and spectroscopy techniques, including Fourier transform infra-red (FT-IR), UV-VIS-NIR, photoluminescence (PL), micro Raman, and cathodoluminescent (CL) spectroscopy, to determine the differences between a natural diamond (0.30 cts) and a CVD diamond (0.43 cts). The identification of a CVD diamond was difficult when using standard gemological techniques, UV-VIS-NIR, or micro-Raman spectroscopy. However, a CVD diamond could be identified using a FT-IR by the Type II peaks. In addition, we identified a CVD diamond conclusively with the uneven UV fluorescent local bands, additional satellite PL peaks, longer phosphorescence life time, and uneven streaks in the CL images. Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.

Synthesis and Characterization of ZnS and ZnS/TiO2 Nanocomposites and Their Enhanced Photo-decolorization of MB and 1,5-Diphenyl Carbazide

  • Meng, Ze-Da;Ullah, Kefayat;Zhu, Lei;Ye, Shu;Oh, Won-Chun
    • 한국세라믹학회지
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    • 제51권4호
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    • pp.307-311
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    • 2014
  • ZnS and $ZnS/TiO_2$ were prepared by chemical deposition. The prepared photocatalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), and transmission electron microscopy (TEM). The generation of reactive oxygen species was detected by monitoring the oxidation reaction from 1,5-diphenyl carbazide (DPCI) to 1,5-diphenyl carbazone (DPCO). Excellent catalytic degradation of methylene blue (MB) solution was observed using the $ZnS/TiO_2$ composites during irradiation with visible light. The results show that the photocatalytic performance of $TiO_2$ nanoparticles is improved by loading with ZnS.