• 한국세라믹학회지
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• 제23권5호
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• pp.81-85
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• 1986

$SnO_2$ thin films have been prepared by chemical vapor deposition technique. Electrical and optical properties of the films have been investigated. It is found that the electrical condictivity and optical transparency of the films are most affected by deposition temperature and more affected by $SnCl_4$ partial pressure than by $O_2$ partial pressure. Experimental results show that the conductivity increases with high optical transparency as deposition temperature increases up to 50$0^{\circ}C$ but the conductivity decreases with the loss of transparency as deposition temperature increases above $600^{\circ}C$.

• 한국세라믹학회지
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• 제53권6호
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• pp.647-651
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• 2016

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of $10^4Pa$ using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature ($T_{dep}$) range of 1150 - 1422 K. At $T_{dep}=1262K$, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate ($R_{dep}$) was $220{\mu}m\;h^{-1}$ at $T_{dep}=1262K$.

• 한국세라믹학회지
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• 제21권2호
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• pp.156-164
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• 1984

The characteristic of pyrolytic carbon deposited in a fluidized bed as measured by density apparent crystallite size and viewed metallographically under polarized light can be easily controlled by adjusting the deposition parameters such as deposition temperature and propane flow rate or silicon content. The density of isotopic pyrolytic carbons deposited from propane between 120$0^{\circ}C$ and 140$0^{\circ}C$ increases with increasing propane flow rate and decreasing deposition temperature from 1, 73g/cc to 2.08g/cc. The apparent crystallite size Lc parameter appears to depend only on deposition temperature being entirely independent of the propane flow rate. The carbon matrix density of the silicon-alloyed carbonds deposited from propane and methyltrichlorosil-ane from 2.05g/cc for a silicon content around 9wt% to 2.67g/cc for a silicon content of 36.7wt% The Lc parameter of the deposition temperature being entirely independent of the silicon content.

• 한국세라믹학회지
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• 제56권3호
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• pp.277-283
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• 2019

We have examined minimization of the number of impurity particles by replacing the load-lock chamber materials of the chemical vapor deposition equipment through optimization of the pumping method in the deposition chamber. In order to reduce the number of impurity particles in the chamber, the load-lock spacer material was changed from monomer casting nylon to Torlon. Furthermore, we controlled the pumping speed and number of pumping ports, which resulted in a reduction in the impurity particle generation from 2.67% to 0.52%. This study revealed that the selection of the material for the parts of a chemical vapor deposition chamber can minimize particle generation, thereby presenting a method of optimization method of the chemical vapor deposition chamber.

• 한국세라믹학회지
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• 제46권5호
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• pp.497-504
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• 2009

DLC is considered as the candidate material for application of moving parts in automotive components relatively in high pressure and temperature operating conditions for its high hardness with self lubrication and chemical inertness. Different deposition method such as arc plating, ion gun plating and PECVD were used for comparing mechanical and tribological properties of each DLCs deposited on stainless steel with 1 um thick respectively. Among these 3 types of DLCs, the arc plated DLC film showed highest value for wear resistance in dry condition. From the results of analysis for physical properties of DLC films, it seems that the adhesion force and crack initiation modes were more important factors than intrinsic mechanical properties such as hardness, elastic modulus and/or roughness to the wear resistance of DLC films. Raman spectroscopy was used for understanding chemical bonding natures of each type of DLC films. Typical D and G peaks were identified based on the deposition method. Hardness of the coating layers were identified by nanoindentation method and the adhesions were checked by scratch method.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.909-914
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• 2013

CIGS is one of thin film solar cell and has been studied so much, because of the possibility of low price and high efficiency. Until now, co-evaporation and sputtering were typical method to prepare CIGS absorption layer, and a few company commercialized solar cell by these method. However, non-vacuum process which has been studied for long time has not been progressed, though the merit of low price. Especially, aerosol deposition method has not been reported, because it is difficult to prepare a large quantity of various CIGS powder. In this study, CIGS powder was synthesized by mechanochemical method and CIGS absorption layer was deposited by aerosol deposition method. The thickness of the CIGS layer was controlled by the number of deposition and the surface roughness of it was affected by the amount of flow gas. And, also, I-V curve of it appeared metallic property in the case of 'as deposition'. After heat treatment in Se-rich atmosphere, the electrical property of it changed to a semiconductor. CdS and transparent conduction layer were formed by a typical method on it for solar cell. The efficiency of cell was appeared 0.19%. Though the efficiency was low because of the disharmony in the after-process, it was conformed that CIGS solar cell could be prepared by aerosol deposition.

• 한국세라믹학회지
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• 제31권2호
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.336-336
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• 2008

• 한국세라믹학회지
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• 제53권6호
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• pp.659-664
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• 2016

Ash deposition of heat exchange boiler, caused mainly by accumulation of particulate matter, reduces heat transfer of the boiler system. Heat and mass transfer through porous media such as ash deposits mainly depend on the microstructure of deposited ash. Therefore, in this study, we investigated microstructural and thermal properties of the ash deposited on the boiler tube. Samples for this research were obtained from the fuel economizer tube in an industrial waste incinerator. To characterize microstructures of the ash deposit samples, scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), inductively coupled plasma optical emission spectroscopy (ICP-OES), X-ray diffraction (XRD) and BET analysis were employed. The results revealed that it had a porous structure with small particles mostly of less than a few micrometers; the contents of Ca and S were 19.3, 22.6% and 18.5, 18.7%, respectively. Also, the results showed that it consisted mainly of anhydrite ($CaSO_4$) crystals. - The thermal conductivities of the ash deposit sample obtained from the economizer tube in industrial waste incinerator were measured to be 0.63 and 0.54 W/mK at $200^{\circ}C$, which were about 100 times less than the thermal conductivity (61.32 W/mK) of the boiler tube itself, indicating that ash deposition on the boiler tube was closely related to a decrease in boiler heat transfer.

• 한국결정성장학회지
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• 제29권6호
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• pp.308-316
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• 2019

전자빔 물리기상증착기술(EBPVD)은 주상형 성장거동과 같이 고온에서의 구조 안정성에 기여할 수 있는 특성으로 인해 터빈블레이드 등과 같은 항공기 엔진 고온부품의 열차폐 코팅(TBC) 제조기술로 개발되어 상용화된 기술이다. 전자빔 증착으로 열·기계적 특성이 상용화 가능한 수준에 만족하는 고품질 열차폐 코팅제조를 위해서는 성장거동, 균일두께형성 등과 같은 구조적 요소의 제어가 반드시 수반되어야 한다. 본 연구에서는 실품형상에 근사한 터빈 블레이드 mock-up에 대한 기하학적 코팅인자 조건에 따른 7YSZ(7 wt% 이트리아 안정화 지르코니아) 열차폐 코팅의 성장거동과 구조변화를 고찰하였으며, 전산모사 기법을 활용한 기하학적 코팅인자 조건에 따른 코팅성장거동 모델링을 수행하여 실제 코팅결과와 비교하였다.