• 한국세라믹학회지
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• 제34권4호
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• pp.387-393
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• 1997

In order to apply WO3 thin films to the semiconducting NOx gas sensors as a sensing material, which have been expected to show good electrical properties, such as large sensitivity, rapid responsibility, and high selectivity, the fabrication method and their sensing characteristics were studied. The variations of surface morphologies, crystallographic orientations and crystallinity with the WO3 thin film growing methods thermal evaporation and DC sputtering methods were investigated by using scanning electron microscopy (SEM) and X-ray diffraction(XRD) analysis. As a result of sensitivity (Rgas/Rair) measurements for the 5 ppm NO2 test gas, the sensitivity values were 113 for the sputtered films and 93 for the evaporated films. It was also observed that the recovery rate of a sensing signal after measuring sensitivity was faster in the sputtered films than in the evaporated films.

• 한국세라믹학회지
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• 제30권1호
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• pp.55-61
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• 1993

In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{\circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.

• 한국세라믹학회지
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• 제35권5호
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• 한국세라믹학회지
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• 제41권3호
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• pp.247-252
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• 2004

노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

• 한국세라믹학회지
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• 제27권4호
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• pp.543-547
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• 1990

Numerous researchers have observed the bubble fromation at SiC/SiO2 interface from 130$0^{\circ}C$ to 1$700^{\circ}C$. According to thermodynamic calculation, the bubble could be formed from the microscopic impurities which result from the chemical vapor deposition of SiC. When C-impurity is present at the interface, it is calculated that the bubble is formed at 1511$^{\circ}C$ and when Si is present, the bubble is formed at 177$0^{\circ}C$. These results are very close to the prior observations, but the calculation can not explain the observation of bubble below 150$0^{\circ}C$.

• 한국재료학회지
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• 제1권1호
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• pp.9-17
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• 1991

화학증착법에 의해 $Si_3N_4-TiC$ 복합재료 위에 코팅된 TiC 박막은 TiN 박막에 비하여 우수한 미세구조와 열충격저항, 계면결합을 가지고 있는 것으로 나타났다. 화학증착법에 의한 TiN 박막은 TiC 박막에 비해 강철과의 마찰계수가 작고 화학적으로 안정하였다. 실험결과는 코팅된 절삭공구가 우수한 내 마모성을 갖고 있는 것으로 나타났다. 또한, 다중 코팅된 절삭공구는 단일 코팅된 공구보다 우수한 내 마모성을 보였다

• 한국세라믹학회지
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• 제32권7호
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• pp.793-798
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• 1995

The relaxation of the intrinsic stresses in the diamond films fabricated by the hot filament CVD was studied, and it was confirmed that the tensile intrinsic stresses in the films could be controlled without any degradation in the quality of the diamond films. The tensile intrinsic stresses in the films decreased from 2.97 to 1.42 GPa when the substrate thickness increased from 1 to 10mm. This result showed that the residual stress was affected by the substrate thickness as well as by the interaction between grains. Applying of ＋50 V between the W filament and the Si substrate during deposition, the tensile intrinsic stress in the film deposited at 0 V was decreased from 2.40 GPa to 0.71 GPa. Such large decrease in the tensile intrinsic stress was due to $\beta$-SiC which acted as a buffer layer for the stress relaxation. However, the application of the large voltage above ＋200V resulted in the change of quality of the diamond film, and nearly had no effect on relaxation in the tensile intrinsic stress.

• 한국세라믹학회지
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• 제37권9호
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• pp.927-932
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• 2000

Mg(NO$_3$)$_2$가 용해된 IPA 용액에서 형광 분말의 전기영동법에 의한 증착 과정을 증착 시간, Mg(NO$_3$)$_2$의 농도 및 열처리 조건에 따라 분석하였다. 전기영동법으로 가장 두께가 균일한 형광막을 얻기 위한 Mg(NO$_3$)$_2$의 최적 농도는 $10^{-3}$~$10^{-4}$ M였다. 형광체의 접착력을 향상시키기 위해 새로운 방법을 고안하였다. 즉 전기영동법으로 증착된 형광막에 B$_2$O$_3$가 용해된 IPA 용액을 분사한 후 열처리를 하였다. 그 결과 기존의 PL 특성을 그대로 유지하면서 접착력을 향상시킬 수 있었다. 그러나 CL 휘도는 약간 감소하였다.

• 한국세라믹학회지
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• 제32권11호
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• pp.1301-1307
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• 1995

Pitting corrosion of TiN film deposited on Inconel 600 by plasma assisted chemical vapor deposition (PACVD) was investigated. Cyclic potentiodynamic polarization (CPP) tests were conducted in order to determine the pit nucleation potentials, Enp, of the TiN-deposited sample and the bare Inconel 600 in deaerated NaCl solution at 25, 135 and 20$0^{\circ}C$. The effects of the TiN film thickness, the solution temperature and the Cl- concentration on Enp were studied. Enp of the TiN-deposited sample which had the film thickness above 1${\mu}{\textrm}{m}$ were higher than those of the bare Inconel 600 by 300~600mV at all the solution temperatures, implying the pitting resistance improvement of the TiN film. The morphologies of the pits generated after immersion test were examined with a scaning electron microscopy. The higher was the solution temperature, the more corrosion products, mainly composed of Cr and Ni oxides, were formed.

• 한국세라믹학회지
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• 제31권3호
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• pp.312-320
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• 1994

Effect of the laser shot number on the particulates density of the pulsed laser deposited YBa2Cu3O7-x thin films and the laser irradiated surface morphology of the YBa2Cu3O7-x bulk target have been investigated. Until 100 laser shots of cumulative irradiation, the films has the particulates density of ~103 mm-2. However, after 100 laser shots, the density was increased more than 10 times. This results has been explained by the change of particulate ejection path with the development of conical structure at the target surface.