• Title/Summary/Keyword: Ceramic Glass

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Dielectric properties of low temperature firing glass reacted (Ba, Sr)$TiO_3$$ ceramic capacitors (저온소결용 (Ba, Sr)$TiO_3$-Glass계 세라믹스의 유전특성)

  • Gu, Ja-Won;Seol, Yong-Geon;Choe, Seung-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.2
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    • pp.151-156
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    • 1995
  • Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

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Fabrication and Characterization of Bi-Based Frit Film for PDP Transparent Dielectric Front Panel (PDP 투명 유전체용 Bi계 프릿트 필름의 제조 및 특성분석)

  • Lee, Sang-Jin;Kim, Joo-Won;Hwang, Jong-Hee
    • Journal of the Korean Ceramic Society
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    • v.44 no.10
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    • pp.548-553
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    • 2007
  • Ceramic green sheets consisting Bi-based glass frit were fabricated for an application to PDP transparent dielectric front panel. The dispersion condition of the slurry for tape casting was pre-examined, and two kinds of hinder and plasticizer were used in the non-aqueous slurry system. In the fabrication process for the frit film, the properties such as dry and firing shrinkage, elongation, and transmittance were examined at the condition of various mixing ratio of plasticizers. In the mixing ratio of polyethylene glycol to dibutyl phthalate of 3:5wt%, a good adhesion, elongation and transmittance were observed at the firing temperature of $580^{\circ}C$. The photograph for the cross section of the interface was also showed a dense microstructure.

Fabrication of Low Temperature Cofired Ceramic (LTCC) Chip Couplers for High Frequencies ; II. Effect of Sintering Process on Ag Diffusion (고주파용 저온 동시소성 세라믹(LTCC)칩 커플러 제조: II. Ag 이온 확산에 대한 소결공정의 영향)

  • 이선우;김경훈;심광보;구기덕
    • Journal of the Korean Ceramic Society
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    • v.36 no.5
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    • pp.490-496
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    • 1999
  • The sintering behavior of LTCC (low temperature cofired ceramics) chip couplers was investigated in relation with Ag diffusion at the interface of glass ceramic substrate-Ag electrode. Sintering temperature was in the range of 825$^{\circ}C$-975$^{\circ}C$. The commercial green sheet and silver electrode were used. Below 875$^{\circ}C$ the diffusion of the Ag ion into the substrate and the penetration of glassy phases into the electrode occurred due to an increase of fluidity. Thus the lectrode line was severely deformed and damaged. At 975$^{\circ}C$ the transformation of crystalline phases into glassy phases and the melting of the Ag electrode resulted in the diffusion of the considerable amount of Ag ions.

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The Effect of Frit on Bonding Behavior of Low-firing-substate and Cu Conductor (프릿트 첨가에 따른 저온소성 기판과 Cu와의 접합 거동에 관한 연구)

  • 박정현;이상진
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.601-607
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    • 1995
  • The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

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