• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1313-1316
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• 2005

In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1642-1645
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• 2007

The brightness of LED changes according to the current flowing through LEDs. The current mirror was used to drive LEDs effectively. The reference current of the current mirror was usually controlled by the resistor but the size of this resistor is very large and this resistor consumes too much power for high power LED backlight driving. The reference current of the current mirror LED driver was controlled by using flyback converter at small size with low power consumption in this paper. The concept of active current source was presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.32-35
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• 2002

In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.568-570
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• 2009

Octadecyltrichlorosilane (OTS) self-assembled monolayer was selectively patterned by deep ultraviolet exposure, resulting in differential surface state, hydrophilic area with OTS hydrophobic surroundings. High-resolution (<10 ${\mu}m$) nanoparticulate Ag electrodes and organic semiconductors were patterned from simple dip-casting and ink-jetting on the pre-patterned hydrophilic surface, forming all solution-processed organic thin film transistors. The devices typically have shown a mobility of 0.065 $cm^2/V{\cdot}s$ and on-off current ratio of $8{\times}10^5$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1067-1070
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• 2006

We have demonstrated highly efficient WOLED with two separated emissive layers using a blue fluorescent dye and a red phosphorescent dye. The maximum luminous efficiency of the device was 11.2 cd/A at $20\;mA/cm^2$ and $CIE_{x,y}$ coordinates varied from (x = 0.33, y = 0.37) at 6V to (x = 0.25, y = 0.33) at 14V.

• Polymer(Korea)
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• v.34 no.3
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• pp.242-246
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• 2010

FTIR spectroscopy has been employed in order to quantitatively investigate the relationship between planar arrangements and selective reflectance of cholesteric liquid crystals. It was found that the selective reflection was enhanced as the amount of planar arrangements in cholesteric liquid crystals increased. Although the planar arrangements of cholesteric liquid crystals can be induced only by the shear force effect, it was more effective to use the alignment layer to obtain the perfect planar arrangements.

• Journal of Information Display
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• v.7 no.3
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• pp.23-26
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• 2006

We fabricated top emission organic light emitting diode (TEOLED) with transparent metal cathode Barium and Silver bilayer. Very thin Ba/Ag bilayer was deposited on the organic layer by thermal evaporation. This cathode showed high transmittance over 70% in visible range, and the device with a Ba-Ag has a low turn on voltage and good electrical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1330-1333
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• 2006

The channel shape of FFL(Flat Fluorescent Lamp) was designed by optical simulation. It was possible to design and manufacture the channel in any shape using glass forming. The best suitable brightness uniformity of 83.7% was achieved.