• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.4
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• pp.71-77
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• 2011

In this paper, we propose a conversational quality measurement (CQM) system for providing the objective QoS of high quality mobile VoIP voice telecommunication. For measuring the conversational quality, the VoIP telecommunication system is implemented in two smart phones connected with VoIP. The VoIP telecommunication system consists of echo cancellation, noise reduction, speech encoding/decoding, packet generation with RTP (Real-Time Protocol), jitter buffer control and POS (Play-out Schedule) with LC (loss Concealment). The CQM system is connected to a microphone and a speaker of each smart phone. The voice signal of each speaker is recorded and used to measure CE (Conversational Efficiency), CS (Conversational Symmetry), PESQ (Perceptual Evaluation of Speech Quality) and CE-CS-PESQ correlation. We prove the CQM system by measuring CE, CS and PESQ under various SNR, delay and loss due to IP network environment.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.26.1-26.1
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• 2006

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.27-31
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• 2002

In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.146-150
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• 1998

The total conductivity and oxygen permeation in (Ce1-xZrxO2)0.9(CaO)0.1 solid solutions were measure das a function of temperature and oxygen partial pressure. Empirically, σ at given x and T was expressed essentially by σ=σo2+σeo Po2-1/4, where σo2 and σeo are constant. Applying a standard defect model in which major defects are Cace", Cece' and Vo in ideal solution, we can assign σo2 as the oxide ion conductivity decreases while the electronic conductivity increases with the increase in Zr content. Using the oxide ion and electronic conductivities thus determined, the oxygen permeation flux was calculated for respective Po2 and T conditions at which the measurements were made. The calculated values were found to agree with the observed ones.

• Journal of the Korean Chemical Society
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• v.31 no.5
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• pp.389-394
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• 1987

The electrical conductivity of CeO$_2$ has been measured in the temperature range of 300 to 1000${\circ}$C under the oxygen pressures of 10$^{-5}$ to 10$^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant PO$_2$ are found to be linear with an inflection, and the activation energy obtained from the slopes appears to be 2.16 eV for the intrinsic region. The conductivity dependences on PO$_2$ at the above temperature range are closely approximated by ${\sigma}$ ${\alpha}$PO$_2^{-1/4}$ for the intrinsic and ${\sigma}$ ${\alpha}$PO$_2^{-1/6.2}$ for the extrinsic, respectively. The dominant defects in this sample are believed to be Ce$^{3{\cdot}}$ interstitial for the intrinsic and the (Vo-2e') for the extrinsic range. The interpretations of conductivity dependences on temperature and $PO_2$ are presented, and conduction mechanisms are proposed to explain the data.