• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.414-417
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• 2012

The effect of cerium concentration and the addition of $Sb_2O_3$ on the light emission of cerium-contained glass were investigated. The glass matrix composition was $20Y_2O_3-25Al_2O_3-55SiO_2$, the $CeO_2$ concentration ranged from 0.05 to 0.5 mol%, and $Sb_2O_3$ was added at concentrations of 0.02 to 0.1 mol%. The $Ce^{3+}$ and $Ce^{4+}$ absorption bands were observed at approximately 330 nm and 240 nm, respectively. A broad emission band at 400 nm, due to the 4f-5d transition of the $Ce^{3+}$ ion, was observed under illumination by a UV light at 330 nm. The photoluminescence intensity of $Ce^{3+}$ had a maximum value at a $CeO_2$ concentration of 0.1 mol%. Adding $Sb_2O_3$ decreased the $Ce^{4+}$ absorption intensity and enhanced the light emission intensity of $Ce^{3+}$ by about 45%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.217-220
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• 2001

The possibility of cerium dioxide (CeO$_{7}$ ) thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching CeO$_2$ thin films have been performed in an inductively coupled C1$_2$/CF$_4$/Ar plasma. The high etch rate of the CeO$_2$ thin film was 250 ${\AA}$/m at a 10% addition of Cl$_2$ into the Ar(80)/CF$_4$(20). The surface reaction of the etched CeO$_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• Progress in Superconductivity
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• v.8 no.1
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• pp.27-32
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• 2006

[$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.1-5
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• 2003

The effect of CeO$_2$ coating on the surface nucleation of the top-seeded melt-growth processed YBCO superconductors was studied. It was effective that the coating of Y123 compact surfaces by CeO$_2$ powder suppressed the undesirable subsidiary YBa$_2$Cu$_3$O$_{7-y}$ (Y123) nucleation during melt processing. BaCeO$_3$ was formed in the CeO$_2$-coated layers, which might cause a CuO-excessive liquid at the partial melt stage of $Y_2$BaCuO$_{5}$(Y211) plus liquid, and thus the Y123 nucleation at the YBCO compact surfaces could be suppressed during the melt growth of Y123 grain. In addition, the CeO$_2$ refined the Y211 particles near the compact / coating interface. While the levitation forces of the top surfaces with and without CeO$_2$ coating were similar to each other, the levitation force of the interior of the CeO$_2$ coated sample was higher than that of the interior of the sample without CeO$_2$ coating, which was attributed to the suppression of subsidiary Y123 nucleation at the compact walls.s.s.

• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.583-591
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• 2021

Various compositions of CeO₂-Ce₃Si₂ (0, 10, 30, 50, and 100 wt%Ce₃Si₂) composites were fabricated using conventional sintering and spark plasma sintering. Lower relative density, enhanced interdiffusion of oxygen and silicon, and silicide agglomerations from the congruent melting of Ce₃Si₂ at 1390 ℃ were only observed from conventionally-sintered pellets. Thermal conductivity of spark plasma sintered CeO₂-Ce₃Si₂ composites was calculated from the measured thermal diffusivity, specific heat, and density, which exhibited dense (>90 %TD) and homogeneous microstructure. The composite with 50 wt%Ce₃Si₂ exhibited 55% higher thermal conductivity than CeO₂ at 500 ℃, and 81% higher at 1000 ℃.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1323-1328
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• 1998

The electrical conductivities of the yttria (8mol%) stabilizedzirconia-ceria solid solutions were measured as a function of oxygen partial between 80$0^{\circ}C$ and 100$0^{\circ}C$ using 4-probe d.c. method Under pure oxygen atmosphere the oxygen ionic conductivity of CeO2-ZrO2 decreased with the concentration of CeO2 Under reducing condition electronic conduction due to the redox equilibrium of Ce ion was observed. Total ionic and electronic conductivities fitted by a defect model enabled to determine the electronic transference number(tei) which increased with the concentration of CeO2 and with the degree of reduction.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.260-266
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• 2012

Syngas and hydrogen from the $CeO_2/ZrO_2$ coated foam devices were investigated under simulated solar radiation. The $CeO_2/ZrO_2$ coated SiC, Ni and Cu foam device were prepared using drop-coating method. Syngas production step was performed at $900^{\circ}C$, and hydrogen production process was performed for ten repeated cycles to compare the CeO2 conversion in syngas production step, $H_2$ yield in hydrogen production step and cycle reproducibility. The produced syngas had the $H_2$/CO ratio of 2, which was suitable for methanol synthesis or Fischer-Tropsch synthesis process. In addition, syngas and hydrogen production process is one of the promising chemical pathway for storage and transportation of solar heat by converting solar energy to chemical energy. After ten cycles of redox reaction, the $CeO_2/ZrO_2$ was analyzed using XRD pattern and SEM image in order to characterize the physical and chemical change of metal oxide at the high temperature.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.433-444
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• 1995

BaCe$O_{3}$를 첨가하여 용융공정으로 제조한 단결정형 Y$Ba_{2}$$Cu_{3}$$O_{x}$(1-2-3) 초전도체의 온도에 대한 자화특성을 연구하였다. 고상반응법과 용융공정으로 0에서 30wt% BaCe$O_{3}$를 1-2-3 결정내에 미세 분산시켰다. 초전도체의 자화특성은 VSM(vibrating sample magnetometer)을 사용하여 77K, 60K, 40K와 20K, 2 Tesla 자장범위에서 측정하였다. BaCe$O_{3}$를 첨가하지 않은 겨우나 5wt% BaCe$O_{3}$를 첨가한 1-2-3 결정의 경우, 77K, 외부자장이 증가시 자화율 차이가 증가하는 비정상 자화특성이 관찰된다. 측정온도가 60K에서는 제2차 최대점이 나타나는 자장값이 고자장쪽으로 이동한다. 20K와 40K의 저온에서는 비정상자화특성이 2 T의 자장범위까지 관찰되지 않았다. 15wt%와 20wt% BaCe$O_{3}$첨가한 시편에서는 자장이 증가하면 자화율차이가 단순히 감소한다. Y-Ba-Cu-O의 flux pinning 기구를 BaCe$O_{3}$첨가에 의한 미세조직변화로 설명하였다.