• 한국진공학회지
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• 제6권1호
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• pp.50-60
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• 1997

순수한 $ZnAl_2S_4,;ZnAl_2Se_4,;CdAl_2S_4,;and;CdAl_2Se_4$ 및 cobalt와 erbium을 불순물로 첨가 한 이들 단결정을 화학수송법으로 성장시켰다. 성장된 단결정의 결정구조, 격자상수, 광학적 energy gap, photoluminescence 특성 등을 측정하여 광학적 전이 기구를 규명하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1283-1285
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• 1997

In this paper, structural, optical and electrical properties of $Cd_{1-x}Zn_xS$ thin films prepared by co-evaporation method were studied. The crystal structure of $Cd_{1-x}Zn_xS$ films deposited at a substrate temperature of $150^{\circ}C$ was hexagonal with the c axis aligned perpendicular to the substrate. As increasing composition parameter x, the intensity of (002) peak decreased, which means poor crystalline and decreasing of preferential orientation. The optical bandgap of $Cd_{1-x}Zn_xS$ films varies from 2.41eV for CdS to 3.48eV for ZnS with x. The resistivity of the $Cd_{1-x}Zn_xS$ films increased with x.

• 태양에너지
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• 제8권1호
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• 전기화학회지
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• 제10권4호
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• pp.262-264
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• 2007

This paper describes a two-step approach for the electrochemical deposition of CdZnS thin films on the polycrystalline Au electrode. Initially, an Au substrate is electrochemically modified with a sulfur layer. In the second step, the layer is electroreduced to $S^{2-}$ in the electrolyte dosed with the requisite amount of $Cd^{2+}$ and $Zn^{2+}$ ions to generate CdZnS films in situ. This approach was validated using a combination of linear sweep voltammetry and electrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have different composition depending on the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Raman spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.218-218
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• 2011

The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.56-58
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• 1989

All-polycrystalline Cd$_1$-xZnxS/CdTe solar cells have been fabricated by coating CdTe slurries with 4.5 wt% of CdCl$_2$on the sintered Cd$_1$-xZnxS films and by sintering CdTe layer at 6$25^{\circ}C$ for lh in nitrogen atmosphere. Solar efficiency of the sintered Cd$_1$-xZnxS/CdTe solar cells increases as the Zn content increases up to x=0.06 and then decreases with further increase in the Zn content. A solar efficiency of 12.5% under a solar intensity of 76mW/$\textrm{cm}^2$ was observed in a Cd 0.94 Zn0.06S/CdTe solar cell. By optimizing the amount of CdCl$_2$in the slurry and sintering conditions, it is possible to produce Cd$_1$-xZnxS/CdTe solar cells with efficiency higher than 12%.

• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.965-970
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• 2012

Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.471-471
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• 2011

1차원 나노 와이어는 나노 디바이스를 구현하는데 있어 중요한 요소로 연구되고 있다. 하지만 나노 와이어를 바람직한 위치에 선택적으로 배열하는 부분은 해결할 과제로 남아있다. DNA 분자가 가지고 있는 음의 전하를 띄는 phosphate backbone과 자기조립 특성은 이러한 문제점들을 해결할 수 있는 중요한 요소이다. 본 연구에서는 DNA 분자 형틀을 이용해서 CdSe/ZnS core-shell 나노입자의 pH 의 변화에 따른 표면 전위 변화를 이용하여 선택적 위치의 나노입자 배열을 통한 나노 와이어를 제작하는 연구를 하였다. 1-step 방법을 이용하여 합성한 CdSe/ZnS core-shell 나노입자를 무극성 용매인 chloroform 용액에 분산시키고 dimethylaminoethanethiol (DMAET) 를 이용하여 표면을 양전하로 치환하였다. 그리고 치환한 CdSe/ZnS 나노입자 용액에 HCl 을 이용해서 pH 7, 6, 5, 4로 변화를 주어 zeta potential 변화를 측정하였고 3-aminopropyltriethoxysilane (APTES) 코팅된 Si 기판에 ${\lambda}$-DNA를 정렬하고 이를 형틀로 이용하여 CdSe/ZnS 나노입자를 정렬하는 실험을 하였고 FE-SEM 을 이용하여 측정하였다. 그 결과 CdSe/ZnS 나노입자의 pH 값이 작아지면서 전위가 커짐에 따라서 APTES 코팅된 기판 표면에 나노입자들이 반응하는 것보다 음전하를 띄는 ${\lambda}$-DNA의 phosphate backbone에 반응하는 것이 커짐에 따라 DNA 분자 형틀에 선택적으로 나노입자가 배열되는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.845-848
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• 2002

The study of photoconductor materials is demanded for development for flat-panel digital x-ray Imager. In this paper, We investigated the feasibility of application as x-ray image sensor using Cd(Zn)Te compound with high stopping power on high radiation. These Cd(Zn)Te samples were fabricated by vacuum thermal evaporation method to large area deposition and investigated I-V measurement as applied voltage. The experimental results show that the additional injection Zn in CdTe film reduced the leakage current, for the $Cd_{0.85}Zn_{0.15}Te$ detector, the net charge had the highest value as $144.58pC/cm^2$ at 30 V.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.