• Title/Summary/Keyword: CdTe detector

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Growth and characterization of detector-grade CdMnTeSe

  • J. Byun ;J. Seo;J. Seo ;B. Park
    • Nuclear Engineering and Technology
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    • v.54 no.11
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    • pp.4215-4219
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    • 2022
  • The Cd0.95Mn0.05Te0.98Se0.02 (CMTS) ingot was grown by the vertical Bridgman technique at low pressure. All wafers showed high resistivity, which suggests potential as a room-temperature semiconductor detector. The resistivity of the CMTS planar detector was 1.47 × 1010 Ω·cm and mobility lifetime product of electrons was 1.29 × 10-3 cm2/V. The spectroscopic property with Am-241 and Co-57 was evaluated. The energy resolution about 59.5 keV gamma-ray of Am-241 was 11% and the photo-peak of 122 keV gamma-ray from Co-57 was clearly distinguished. The result shows the first detector-grade CMTS in the world and proves CMTS's potential as a radiation detector operating at room temperature.

Development and Testing of CdZnTe Detector for Pocket Surveymeter (CdZnTe 검출기를 이용한 개인용 Pocket Surveymeter의 제작 및 특성)

  • Lee, Hong-Kyu;Kang, Young-Il;Choi, Myung-Jin;Wang, Jin-Suk;Kim, Byung-Taik
    • Journal of Radiation Protection and Research
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    • v.21 no.1
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    • pp.1-7
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    • 1996
  • In this paper, we discussed the fabrication and characterization of bulk type CdZnTe detector for pocket surveymeter. The resistivity of CdZnTe single crystal grown by the High Pressure Bridgman method is in the mid of $10^9$ ohm-cm. The detector structure is Au/CdZnTe/Au and gold electrode is formed by electroless deposition method. Resolutions of 4.8keV and 2.2keV were observed at 22.2keV line of $^{109}Cd$ and 59.6keV line of $^{241}Am$ at room temperature, respectively. We also constructed the small size pocket surveymeter using home made CdZnTe detector. It shows the good linearity over a range from 1mR/hr to 10R/hr with deviation less than 5%. The sensitivity of the surveymeter developed is $2.2{\times}10^3 cps/Rad\;hr^{-1}$ for the 662keV of $^{l37}Cs\;{\gamma}-ray$.

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X-ray Response Characteristic of Hybrid-type CdZnTe Detector (혼합형 CdZnTe 검출기의 X선 반응특성)

  • Cha, B.Y.;Kang, S.S.;Kong, H.G.;Lee, G.H.;Kim, J.H.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.35-38
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    • 2002
  • In this paper, for digital x-ray conversion receptor development studied by hybrid technology of based on CdZnTe. For this study, First searched fabricate method of CdZnTe x-ray receptor. Second, search the phosphor material & fabricate method for scintillator layer. Fabricated sample is analyzed with physical & electric measurement. This result is showed good SNR ratio hybrid thechnology with direct method & indirect method. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

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Characteristics of radiographic images acquired with CdTe, CCD and CMOS detectors in skull radiography

  • Queiroz, Polyane Mazucatto;Santaella, Gustavo Machado;Lopes, Sergio Lucio Pereira de Castro;Haiter-Neto, Francisco;Freitas, Deborah Queiroz
    • Imaging Science in Dentistry
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    • v.50 no.4
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    • pp.339-346
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    • 2020
  • Purpose: The purpose of this study was to evaluate the image quality, diagnostic efficacy, and radiation dose associated with the use of a cadmium telluride (CdTe) detector, compared to charge-coupled device (CCD) and complementary metal oxide semiconductor(CMOS) detectors. Materials and Methods: Lateral cephalographs of a phantom (type 1) composed of synthetic polymer filled with water and another phantom (type 2) composed of human skull macerated with polymer coating were obtained with CdTe, CCD, and CMOS detectors. Dosimeters placed on the type 2 phantom were used to measure radiation. Noise levels from each image were also measured. McNamara cephalometric analysis was conducted, the dentoskeletal configurations were assessed, and a subjective evaluation of image quality was conducted. Parametric data were compared via 1-way analysis of variance with the Tukey post-hoc test, with a significance level of 5%. Subjective image quality and dentoskeletal configuration were described qualitatively. Results: A statistically significant difference was found among the images obtained with the 3 detectors(P<0.05), with the lowest noise level observed among the images obtained with the CdTe detector and a higher subjective preference demonstrated for those images. For the cephalometric analyses, no significant difference (P>0.05) was observed, and perfect agreement was seen with regard to the classifications obtained from the images acquired using the 3 detectors. The radiation dose associated with the CMOS detector was higher than the doses associated with the CCD (P<0.05) and CdTe detectors(P<0.05). Conclusion: Considering the evaluated parameters, the CdTe detector is recommended for use in clinical practice.

Fabrication of Virtual Frisch-Grid CdZnTe ${\gamma}$-Ray Detector (가상 Frisch-그리드를 이용한 CdZnTe 감마선 소자 제작)

  • Park, Chansun;Kim, Pilsu;Cho, PyongKon;Choi, Jonghak;Kim, Jungmin;Kim, KiHyun
    • Journal of radiological science and technology
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    • v.37 no.4
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    • pp.253-259
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    • 2014
  • Large volume of $6{\times}6{\times}12mm^3$ CdZnTe ${\gamma}$-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in $^{137}Cs$. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV ${\gamma}$-peak of $^{137}Cs$ with virtual Frisch-grid CdZnTe detector.

Digital X-ray Detector에 적용을 위한 Polycrystalline CdTe 구조에 따른 전기적 신호 연구

  • Kim, Jin-Seon;O, Gyeong-Min;Jo, Gyu-Seok;Song, Yong-Geun;Hong, Ju-Yeon;Heo, Seung-Uk;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.484-484
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    • 2013
  • 기존 진단용 Digital X-ray Detector이 직접방식에서는 a-Se (Amorphous Selenium)이 대중화되었지만 고전압을 인가하여야한다는 점과 그로 인한 물질 자체의 Life time 감소 등 여러 단점들 때문에 기타 후보물질들로 HgI2, PbI2, PbO, CdTe, CdZnTe가 연구 되고 있다. 이러한 후보 물질들 중 본 연구에서는 PVD (Physical Vapor Deposition)방식을 이용하여 Polycrystalline CdTe 박막을 제작하고 특성 향상을 위해 유전물질을 Passive layer와 Protect layer로써 증착하였다. 또한 유전체층의 위치에 따른 특성 분석을 위해 제작된 박막은 FE-SEM (Field Emission Scanning Electron Microscope), XRD (X-ray Diffraction)을 통해 구조적인 특성을 확인하였다. 그리고 입사되는 X-ray 선량에 의해 생성되는 전기적 특성을 분석하였다, 그 결과 박막의 Grain Size는 약 $5{\mu}M$이며 (111)방향의 주 peak를 띄는 Poly CdTe형태로 증착된 것을 확인하였다. 전기적인 신호 결과 Passive layer와 Protect layer를 증착한 박막 모두 Darkcurrent가 감소된 것을 확인하였다. 또한 Sensitivity 측정 결과 Passive layer를 삽입한 경우 신호 값이 감소하였으며 Protect layer를 삽입한 경우 신호 값의 변화가 일어나지 않았다. 그러므로 Protect layer를 등착한 박막의 경우 SNR이 현저히 높아지는 결과를 낳았다.

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The characteristic study of hybrid X-ray detector using CdTe and Zns:AgCl phosphor (CdTe 와 ZnS:AgCl phosphor를 이용한 Hybrid형 X선 검출기의 특성연구)

  • Seok, Dae-Woo;Kang, Sang-Sik;Kim, Jin-Young;Park, Ji-Koon;Mun, Chi-Woong;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.71-74
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    • 2003
  • Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

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Improvement of HgCdTe Qualities grown by MOVPE using MBE grown CdTe/Si as Substrate (MBE법으로 성장된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상)

  • Kim, Jin-Sang;Suh, Sang-Hee;Sivananthan, S.
    • Journal of Sensor Science and Technology
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    • v.12 no.6
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    • pp.282-288
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    • 2003
  • We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

Similarity analysis of pixelated CdTe semiconductor gamma camera image using a quadrant bar phantom for nuclear medicine: Monte Carlo simulation study

  • Park, Chan Rok;Kang, Seong-Hyeon;Lee, Youngjin
    • Nuclear Engineering and Technology
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    • v.53 no.6
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    • pp.1947-1954
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    • 2021
  • In the nuclear medicine imaging, quality control (QC) process using quadrant bar phantom is fundamental aspect of evaluating the spatial resolution. In addition, QC process of gamma camera is performed by daily or weekly. Recently, Monte Carlo simulation using the Geant4 application for tomographic emission (GATE) is widely applied in the pre-clinical nuclear medicine field for modeling gamma cameras with pixelated cadmium telluride (CdTe) semiconductor detector. In this study, we modeled a pixelated CdTe semiconductor detector and quadrant bar phantom (0.5, 1.0, 1.5, and 2.0 mm bar thicknesses) using the GATE tool. Similarity analysis based on correlation coefficients and peak signal-to-noise ratios was performed to compare image qualities for various source to collimator distances (0, 2, 4, 6, and 8 cm) and collimator lengths (0.2, 0.4, 0.6, 0.8, and 1.0 cm). To this end, we selected reference images based on collimator length and source to collimator distance settings. The results demonstrate that as the collimator length increases and the source to collimator distance decreases, the similarity to reference images improves. Therefore, our simulation results represent valuable information for the modeling of CdTe-based semiconductor gamma imaging systems and QC phantoms in the field of nuclear medicine.