• Title/Summary/Keyword: CdTe X-ray imaging sensor

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Development of Packaging Technology for CdTe Multi-Energy X-ray Image Sensor (CdTe 멀티에너지 엑스선 영상센서 패키징 기술 개발)

  • Kwon, Youngman;Kim, Youngjo;Ryu, Cheolwoo;Son, Hyunhwa;Kim, Byoungwook;Kim, YoungJu;Choi, ByoungJung;Lee, YoungChoon
    • Journal of the Korean Society of Radiology
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    • v.8 no.7
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    • pp.371-376
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    • 2014
  • The process of flip-chip bump bonding, Au wire bonding and encapsulation were sucessfully developed and modularized. The CdTe sensor and ROIC were optimally jointed together at $150^{\circ}C$ and $270^{\circ}C$ respectively under24.5 N for 30s. To make SnAg bump on ROIC easy to be bonded, the higher bonding temperature was established than CdTe sensor's. In addition, the bonding pressure was lowered minimally because CdTe Sensor is easier to break than Si Sensor. CdTe multi-energy sensor module observed were no electrical failures in the joints using developed flip chip bump bonding and Au wire bonding process. As a result of measurement, shearing force was $2.45kgf/mm^2$ and, it is enough bonding force against threshold force, $2kgf/mm^2s$.

The Fabrication and Property Evaluation of Poly-crystalline CdTe based Photon Counting X-ray Sensor (다결정 CdTe 기반의 광계수형 X선 센서 제작 및 특성평가)

  • Kang, Sang Sik;Park, Ji Koon
    • Journal of the Korean Society of Radiology
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    • v.9 no.7
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    • pp.439-443
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    • 2015
  • An electrical signals of a conventional radiation medical imaging sensor are obtained by charge integration method. In this study, the polycrystalline cadmium telluride(p-CdTe) film was fabricated by a thermal evaporation method for the photon counting sensor development with excellent resolution in low exposure dose. From the fabricated p-CdTe sensor, the physical properties(SEM, XRD) and the electrical properties(leakage current, x-ray sensitivity, SNR) were evaluated. As a result, the leakage current of below $5nA/cm^2$ and $7{\mu}C/cm^2-R$ of the X-ray sensitivity were showed in below $1V/{\mu}m$. In addition, the signal to noise ratio showed the values of above 5000 at operating voltage.

A study on electrical response property of photoconductor film for x-ray imaging sensor (X선 영상센서 적용을 위한 광도전체 필름의 전기적 응답특성 연구)

  • Kang, Sang-Sik;Kim, Chan-Wook;Lee, Mi-Hyun;Lee, Kwang-Ok;Moon, Yong-Soo;An, Sung-A;No, Ci-Chul;Park, Ji-Koon
    • Journal of the Korean Society of Radiology
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    • v.3 no.4
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    • pp.29-33
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    • 2009
  • Recently, the compound materials(a-Se, $HgI_2$, PbO, CdTe, $PbI_2$, etc.) that are used in flat panel x-ray imager have been studied for digital x-ray imaging. In this paper, the signal detection properties of $HgI_2$ and a-Se conversion layer, are compared. The thick $HgI_2$ film is fabricated by special particle-in-binder method and the conventional vacuum thermal evaporation is used for a deposition of a-Se film. And an electrical characteristic measurements were investigated about leakage current, signal response property and x-ray sensitivity. From the experimental results show that the $HgI_2$ film has a low operation voltage and high signal generation than that of a-Se.

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