• Title/Summary/Keyword: CdTe X선 영상센서

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Development of Packaging Technology for CdTe Multi-Energy X-ray Image Sensor (CdTe 멀티에너지 엑스선 영상센서 패키징 기술 개발)

  • Kwon, Youngman;Kim, Youngjo;Ryu, Cheolwoo;Son, Hyunhwa;Kim, Byoungwook;Kim, YoungJu;Choi, ByoungJung;Lee, YoungChoon
    • Journal of the Korean Society of Radiology
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    • v.8 no.7
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    • pp.371-376
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    • 2014
  • The process of flip-chip bump bonding, Au wire bonding and encapsulation were sucessfully developed and modularized. The CdTe sensor and ROIC were optimally jointed together at $150^{\circ}C$ and $270^{\circ}C$ respectively under24.5 N for 30s. To make SnAg bump on ROIC easy to be bonded, the higher bonding temperature was established than CdTe sensor's. In addition, the bonding pressure was lowered minimally because CdTe Sensor is easier to break than Si Sensor. CdTe multi-energy sensor module observed were no electrical failures in the joints using developed flip chip bump bonding and Au wire bonding process. As a result of measurement, shearing force was $2.45kgf/mm^2$ and, it is enough bonding force against threshold force, $2kgf/mm^2s$.

The Fabrication and Property Evaluation of Poly-crystalline CdTe based Photon Counting X-ray Sensor (다결정 CdTe 기반의 광계수형 X선 센서 제작 및 특성평가)

  • Kang, Sang Sik;Park, Ji Koon
    • Journal of the Korean Society of Radiology
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    • v.9 no.7
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    • pp.439-443
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    • 2015
  • An electrical signals of a conventional radiation medical imaging sensor are obtained by charge integration method. In this study, the polycrystalline cadmium telluride(p-CdTe) film was fabricated by a thermal evaporation method for the photon counting sensor development with excellent resolution in low exposure dose. From the fabricated p-CdTe sensor, the physical properties(SEM, XRD) and the electrical properties(leakage current, x-ray sensitivity, SNR) were evaluated. As a result, the leakage current of below $5nA/cm^2$ and $7{\mu}C/cm^2-R$ of the X-ray sensitivity were showed in below $1V/{\mu}m$. In addition, the signal to noise ratio showed the values of above 5000 at operating voltage.

A study on electrical response property of photoconductor film for x-ray imaging sensor (X선 영상센서 적용을 위한 광도전체 필름의 전기적 응답특성 연구)

  • Kang, Sang-Sik;Kim, Chan-Wook;Lee, Mi-Hyun;Lee, Kwang-Ok;Moon, Yong-Soo;An, Sung-A;No, Ci-Chul;Park, Ji-Koon
    • Journal of the Korean Society of Radiology
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    • v.3 no.4
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    • pp.29-33
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    • 2009
  • Recently, the compound materials(a-Se, $HgI_2$, PbO, CdTe, $PbI_2$, etc.) that are used in flat panel x-ray imager have been studied for digital x-ray imaging. In this paper, the signal detection properties of $HgI_2$ and a-Se conversion layer, are compared. The thick $HgI_2$ film is fabricated by special particle-in-binder method and the conventional vacuum thermal evaporation is used for a deposition of a-Se film. And an electrical characteristic measurements were investigated about leakage current, signal response property and x-ray sensitivity. From the experimental results show that the $HgI_2$ film has a low operation voltage and high signal generation than that of a-Se.

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CdZnTe Detector for Computed Tomography based on Weighting Potential (가중 퍼텐셜에 기초한 CT용 CdZnTe 소자 설계)

  • Lim, Hyunjong;Park, Chansun;Kim, Jungsu;Kim, Jungmin;Choi, Jonghak;Kim, KiHyun
    • Journal of radiological science and technology
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    • v.39 no.1
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    • pp.35-42
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    • 2016
  • Room-temperature operating CdZnTe(CZT) material is an innovative radiation detector which could reduce the patient dose to one-tenth level of conventional CT (Computed Tomography) and mammography system. The pixel and pixel pitch in the imaging device determine the conversion efficiency of incident X-or gamma-ray and the cross-talk of signal, that is, image quality of detector system. The weighting potential is the virtual potential determined by the position and geometry of electrode. The weighting potential obtained by computer-based simulation in solving Poisson equation with proper boundaries condition. The pixel was optimized by considering the CIE (charge induced efficiency) and the signal cross-talk in CT detector system. The pixel pitch was 1-mm and the detector thickness was 2-mm in the simulation. The optimized pixel size and inter-pixel distance for maximizing the CIE and minimizing the signal cross-talk is about $750{\mu}m$ and $125{\mu}m$, respectively.