• Korean Journal of Optics and Photonics
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• v.15 no.2
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• pp.171-176
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• 2004

A light deflector integrated laser diode(LD) was fabricated and the characteristics of LD and ourput beam deflection as a function of deflector injection current were measured. To integrate the deflector with LD, a passive waveguide was integrated with the LD and a triangular-type light deflector was fabricated on the upper clad of the passive waveguide section. Light deflection from the fabricated light deflector is controlled by the effective refractive index variation induced by carrier injection. To characterize the effect of the deflector injection current, threshold current, slope efficiency, and output beam spectrum were measured as a function of deflector injection current. From these measured data, the increment in the threshold current and the decrement of the slope efficiency were observed. However, the output beam spectrum was not affected by the deflector. The Beam Propagation Method(BPM) was used to simulate the proposed device and the light deflection was measured by the far-field pattern of the output beam as a function of the deflector injection current. In the fabricated deflector integrated LD, the deflection angle of 1.9$^{\circ}$ at the injection current of 15 ㎃ was obtained.

• ETRI Journal
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• v.29 no.2
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• pp.162-168
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• 2007

A new scheme for bi-directional HDTV/Gigabit Ethernet/CATV transmission over a hybrid dense-wavelength-division-multiplexing passive optical network (DWDM-PON) is proposed and demonstrated. It is based on injection-locked vertical-cavity surface-emitting lasers and distributed-feedback laser diodes as transmitters. Services with 129 HDTV channels, a 1.25 Gbps Gigabit Ethernet connection, and 77 CATV channels are successfully demonstrated over 40 km single-mode fiber links. Good performance of bit error rate, carrier-to-noise ratio, composite second order, and composite triple beat is achieved in our proposed bidirectional DWDM-PON.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.2
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.244-244
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• 2012

Polymer memory devices have attracted considerable attention because of their advantages such as low cost potential, good scalability, flexibility, simplicity in structure, and large capacity for data storage. Metal/poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/metal system has been found to show an electrical bi-stable behavior. Here, we show a novel set-up of 6F-TPA PI/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found, leading to a write-once-read-many (WORM) behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.292-298
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• 2012

The epitaxial layer structures for blue InGaN light emitting diodes have been optimized for high brightness applications with the output power levels exceeding 1000 $W/cm^2$ by using a self-consistent finite element method. The light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative recombination processes and carrier spillover have also been taken into account. The wall-plug efficiency at high injection levels up to several thousand $A/cm^2$ has been successfully evaluated for various epilayer structures facilitating optimization of the epitaxial structures for desired output power levels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.324-327
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• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.374-374
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• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

• Transactions of the Society of Information Storage Systems
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• v.9 no.2
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• pp.56-61
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• 2013

The recent increased use of mobile phone has resulted in a technical focusing on reliability issues related to drop performance. Since mobile phone may be dropped several times during their use, it is required to survive common drop accidents. The plastic injection parts such as base stopper and carrier in the encoder type actuator can be broken easily in the actual reliability test of 1.5m free drop. So, we analyzed the shock resistance characteristics of auto focus actuator with variables in the material properties using finite element method. By applying the new resin materials, we can decrease the breakage of plastic injection parts and improve the reliability of mobile phone.