• 제목/요약/키워드: Carrier density

검색결과 547건 처리시간 0.029초

Fluorine 주입에 따른 NMOSFET의 소자 특성 연구 (Analysis of Device Characteristics of NMOSFETs on Fluorine Implantation)

  • 권성규;권혁민;이환희;장재형;곽호영;고성용;이원묵;이성재;이희덕
    • 한국전기전자재료학회논문지
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    • 제25권1호
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    • pp.20-23
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    • 2012
  • In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.

Transport Properties of Conversion Materials for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제8권6호
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    • pp.250-254
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    • 2007
  • Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

다중반송 전송시스템을 위한 RF 전력증폭기의 비선형 특성과 BER관계 분석 (Analysis of RP Power Amplifier Nonlinearity and BER Characteristics for Multi­Carrier Transmission System)

  • 신동환;이영철
    • 한국정보통신학회논문지
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    • 제7권8호
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    • pp.1612-1620
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    • 2003
  • 본 논문에서는 GaAsFET 전력증폭기를 다중반송 통신시스템에서 적용시키고자 설계한 PA증폭기의 측정된 전달함수를 비선형 모델링 한 결과를 제시하였으며 모델링 한 결과를 가지고 설계한 RF 증폭기의 AM­AM 및 AM­PM 비선형 특성을 추정하였다. 추정된 비선형특성 의하여 다중반송전송시스템에서의 증폭기의 근접채널간섭특성(ACPR), QPSK 및 64­QAM과 같은 디지털 변조 신호에 대하여 성상도에서의 데이터 오차벡터의 크기(EVM) 및 BER 관계를 분석하였다. 본 연구에서 제시한 RF GaAs FET의 비선형 모델링은 OFDM을 이용하는 무선 다중반송전송시스템 설계에 적용할 수 있으며 전력증폭기와 디지털 변조 신호에 따른 비선형 관계를 정확하게 추정할 수 있다.

수소발생반응에 대한 Pyrites 표면 촉매 성능 예측: 밀도 범함수 이론 계산 (Identification of a Universal Relation between a Thermodynamic Variable and Catalytic Activities of Pyrites toward Hydrogen Evolution Reaction: Density Functional Theory Calculations)

  • 강준희;황지민;한병찬
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.87.1-87.1
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    • 2017
  • High functional catalyst to efficiently produce clean and earth-abundant renewable fuels plays a key role in securing energy sustainability and environmental protection of our society. Hydrogen has been considered as one of the most promising energy carrier as represented by focused research works on developing catalysts for the hydrogen evolution reaction (HER) from the water hydrolysis over the last several decades. So far, however, the major catalysts are expensive transition metals. Here using first principles density functional theory (DFT) calculations we screen various pyrites for HER by identifying fundamental descriptor governing the catalytic activity. We enable to capture a strong linearity between experimentally measured exchange current density in HER and calculated adsorption energy of hydrogen atom in the pyrites. The correlation implies that there is an underlying design principle tuning the catalytic activity of HER.

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암모니아 역류형태의 반응로를 이용한 GaN 반도체 박막의 성장 (Crystal growth of GaN semiconductor films by counter-flow metal-organic chemical vapor deposition)

  • 김근주;황영훈
    • 한국결정성장학회지
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    • 제9권6호
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    • pp.574-579
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    • 1999
  • 암모니아가스를 역류시키는 수평식 유기금속 화학기상증착장치를 제작하였으며, 유체흐름에 관한 레이놀즈 수 및 열대류에 관한 레일리 수가 각각 4.5와 215.8이 되도록 하여 GaN 박막을 성장하였다. 이러한 특성변수에서 박막을 성장할 경우 비교적 양호한 박막의 결정특성, 전기적 특성 및 광학적 특성을 갖게 함을 확인하였다. 결정 내의 전위밀도는 $2.6{\times}10^8/\textrm {cm}^2$ 정도이었고, Si으로 도핑된 n-GaN 박막의 전자에 의한 운반자 농도와 이동도는 각각 $10^{17}$~$10^{18}/{\textrm}{cm}^3$ 과 200~400$\textrm{cm}^2$/V.sec의 범위를 갖으며 Mg을 도핑하여 후속열처리로 활성화시킨 p-GaN 박막은 정공에 의한 운반자 농도가 $8\times 10^{17}/{\textrm}{cm}^3$ 정도임을 확인하였다.

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황금추출물 담지 제올라이트 마이크로입자를 함유한 고밀도 폴리에틸렌 원단의 항균 특성 (Antimicrobial Activity of High Density Polyethylene Fabric Containing Scutellaria Baicalensis Extract-Loaded Zeolite Microparticles)

  • 이숙영;조미래;김현진;권태엽;한현정;윤영일;손준식
    • 한국염색가공학회지
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    • 제29권4호
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    • pp.247-255
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    • 2017
  • Scutellaria Baicalensis(SB) is widely used in traditional and modern oriental medicine. It possesses several biology activities such as anti-oxidative, anti-inflammatory, antimicrobial and antiviral activities. In this study, a functional high density polyethylene (HDPE) fabric with antimicrobial properties was developed using zeolite microparticles as a SB extract delivery carrier. Zeolites loaded with SB extract were prepared by immersing in an SB extract aqueous solution. The average size of the SB extract-loaded zeolites was about 0.1 to $2.0{\mu}m$, and the morphology of the zeolites was not altered after SB extract binding. The resulting SB extract-loaded zeolites were then immobilized homogeneously onto the HDPE fabric using acrylic binder. The encapsulation efficiency of SB extract to the zeolite was more than 45%. The in vitro release test of SB extract-loaded zeolites containing HDPE fabrics showed release of 35% of the total SB extract by day 1 in a 24hours immersion study. Moreover, the SB extract-loaded zeolites containing HDPE fabrics showed effective antimicrobial activity against Streptococcus mutans, Staphylococcus aureus, and Klebsiella pneumoniae, indicating that this innovative delivery platform potently imparted antimicrobial activity to the HDPE fabric. In conclusion, the current study suggests that the HDPE fabric containing the SB extract-loaded zeolites microparticle carrier system has potential as an effective antimicrobial textile such as safety gloves, protective gloves etc.

Crosserase와 crosstalk이 DVD 재생 신호에 미치는 영향 (Crosserase and Crosstalk Effects on Readout Signal of Digital Versatile Disks)

  • 박연수;김지원;조순철
    • 전자공학회논문지CI
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    • 제38권4호
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    • pp.33-38
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    • 2001
  • 고밀도 기록매체인 DVD RAM 시스템에서 단면 기록밀도 4.7 GB, 15 GB 매체 개발 실현에 가장 큰 걸림돌로 작용하고 있는 crosserase 및 crosstalk 현상이 재생 신호에 미치는 영향을 분석하기 위해 4.7 GB 및 15 GB 규격으로 재생 신호를 시뮬레이션 하였다. 디스크에 조사된 빔의 강도는 Gaussian으로 근사화하고 기록된 마크는 타원형 마크로 가정하였으며, 재생신호는 Gaussian 빔 패턴과 마크 패턴의 이중 적분으로 계산되었다. Crosserase 정도를 변하여 얻어진 재생 신호로부터 주파수 분석을 통하여 3T-11T 마크의 carrier level의 크기를 구하여 비교하였다. 1,000개의 3T-11T 랜덤 마크로 부터 crosserase 및 crosstalk 에 의한 지터를 계산하여 비교한 결과, crosserase에 의한 지터가 crosstalk에 의한 지터 보다 상대적으로 작음을 확인할 수 있었다.

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Comparing the Passivation Quality of Ozone and H2O Oxidant of Atomic Layer Deposited Al2O3 by Post-annealing in N2 and Forming Gas Ambients for Passivated Emitter and Rear Cell (PERC)

  • Cho, Young Joon;Chang, Hyo Sik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.462-462
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    • 2014
  • The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

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CIGS 태양전지의 소수캐리어 확산 거리에 대한 새로운 측정 방안 연구 (Rapid and Accurate Measurement of Diffusion Length of Minority Carriers of CIGS Solar Cells)

  • 이돈환;김영수;모찬빈;남정규;이동호;박성찬;김병준;김동섭
    • Current Photovoltaic Research
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    • 제2권2호
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    • pp.59-62
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    • 2014
  • Minority carrier diffusion length is one of the most important parameters of solar cells, especially for short circuit current density (Jsc). In this report, we proposed the calculating method of the minority carrier diffusion length ($L_n$) in CIGS solar cells through biased quantum efficiency (QE). To verify this method's reliability, we chose two CIGS samples which have different grain size and calculated $L_n$ for each sample. First of all, we calculated out that $L_n$ was 56nm and 97nm for small and large grain sized-cell through this method, respectively. Second, we found out the large grain sized-cell has about 7 times lower defect density than the small grain sized-cell using drive level capacitance profiling (DLCP) method. Consequently, we confirmed that $L_n$ was mainly affected by the micro-structure and defect density of CIGS layer, and could explain the cause of Jsc difference between two samples having same band gap.

EML doping 위치에 따른 적색 인광 OLED 특성 변화 연구

  • 현영환;최병덕
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.230.1-230.1
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    • 2016
  • 본 연구에서는 Host-Dopant system 기반 적색 인광 OLED의 Emitting layer(EML)에서 doping 위치에 따른 특성 변화를 분석하였다. EML은 host 물질로 60 nm 두께의 CBP를 사용하고, 적색 발광을 위해 10 %의 $Ir(btp)_2$를 CBP의 Front, Middle, Back side에 각각 20 nm씩 doping하였다. 본 구조의 적색 인광 OLED는 current density, luminance, efficiency, EL spectrum 등을 통해 전기적, 광학적 특성 변화를 확인하였다. Front, Back side에 doping으로 인한 CBP의 Energy level이 3.6 eV에서 1.9 eV로 감소하여 각각 HTL/EML, EML/HBL의 경계에 carrier direct injection이 활성화 되었고, 이로 인한 charge balance의 저하를 확인하였다. EL spectrum결과 각 소자는 CBP의 618 nm 파장 외에도, 추가적으로 TPBi의 398 nm, NPB의 456 nm의 파장을 보였다. 이를 통해 doping 위치에 따라 exciton이 형성되는 recombination zone이 이동하고 있음을 확인하였고, Front side는 6 V의 인가전압에서는 발광 파장이 398 nm에서 높은 값을 보이나 8 V, 10 V, 12 V에서 618 nm에서 높은 값을 보이는 것으로 인가전압에 의해 recombination zone이 HTL쪽으로 이동되는 것 또한 확인하였다.

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