• Journal of Mechanical Science and Technology
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• 제20권8호
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제15권12호
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• pp.4617-4632
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• 2021

IEEE 802.11ax is a protocol being developed for high-density Wireless Local Area Networks (WLAN). Several algorithms have been proposed to improve the level of spatial reuse applied in IEEE 802.11ax. However, these algorithms are tentative and do not specify how to select the transmit power and carrier sense threshold in practice; It is unclear when and why the tuned parameters lead to better network performance. In this paper, we restricted the scale of transmit power tuning to prevent the case of backfire in which spatial reuse will result in transmission failure. If the restrictions cannot be satisfied, spatial reuse will be abandoned. This is why we named the proposed scheme as Arbitration based Spatial Reuse (ASR). We quantified the network performance after spatial reuse, and formulate a corresponding maximum problem whose solution is the optimal carrier sense threshold and transmit power. We verified our theoretical analysis by simulation and compared it with previous studies, and the results show that ASR improves the throughput up to 8.6% compared with 802.11ax. ASR can avoid failure of spatial reuse, while the spatial reuse failure rate of existing schemes can up to 36%. To use the ASR scheme in practice, we investigate the relation between the optimal carrier sense threshold and transmit power. Based on the relations got from ASR, the proposed Relation based Spatial Reuse (RSR) scheme can get a satisfactory performance by using only the interference perceived and the previously found relations.

• Carbon letters
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• 제8권1호
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• pp.25-29
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• 2007

The carbon brake discs were manufactured by densification the carbon fiber preform using PG-CVI technology with Propene as a carbon precursor gas and Nitrogen as a carrier gas. The densities of carbon brake discs were tested at different densification time. The results indicate that the densification rate is more rapid before 100 hrs than after 200 hrs. The CTscanning image and the SEM technology were used to observe the inner subtle structure. CT-images show the density distribution in the carbon brake disc clearly. The carbon brake disk made by PG-CVI is not very uniform. There is a density gradient in the bulk. The high-density part in the carbon brake is really located in the friction surface, especially in the part of inner circle. This density distribution is most suitable for the stator disc.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.605-609
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• 2001

Low density ceramic supporter was prepared by using fly ash as a starting material for the application to the biological aerated filter (BAF) system, and the effect of additives and sintering atmosphere on the apparent and bulk density of the carrier was examined. Borax, Na$_2$O and glass powders were added to produce liquid phase. The density of the supporter decreased as the amount of borax increased. The bulk density of 0.79 g/㎤ and the apparent density of 1.10 g/㎤ were obtained when the fly ash with 15% of borax was sintered at 116$0^{\circ}C$ for 15 minutes. The density also decreased as the plate glass powders past through 22${\mu}{\textrm}{m}$ size were mixed. When the fly ash with 12% of grass powder was sintered at 128$0^{\circ}C$ for 10 minutes, the bulk and apparent density were 0.90g/㎤ and 1.00 g/㎤, respectively. Apparent density of 1.6~1.8g/㎤ was obtained when the fly ash was sintered at 120$0^{\circ}C$ in a weak reducing atmosphere. By maintaining the reducing atmosphere and sintering at a high heating rate, the liquid phase was farmed from the reduced composition of fly ash. This resulted in the formation of closed pores that enabled the low apparent density.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.276.1-277
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• 2000

Absorptive bistable laser diode was analyzed by using traveling wave model in conjunction with the finite-difference method. Carrier and photon density distributions were calculated and the output characteristics were obtained. The results for both the steady-state and transient (switching) cases were compared with those of the rate equation approach.

• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• 한국광학회지
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• 제11권1호
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• pp.37-42
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• 2000

반도체 광 증폭기의 특성을 이해하기 위하여 비율 방정식을 수치 해석적으로 풀었다. 사용된 비율 방정식은 운반자 밀도와 자발 방출된 빛, 그리고 신호 빛을 위치와 시간의 함수로 기술할 수 있다. 사각 파형의 신호가 입사했을 경우에 대하여 위의 세가지 양을 구하여서 반도체 광증포기의 동적인 특성을 파악하였다. 파장 다중 광통신에서처럼 다중신호가 입사하는 경우의 비선형성을 분석하였다. 맥놀이에 의한 내부변조 변형을 계산하여 본 결과 파장 간격이 넓을수록 내부변조 변형은 줄어드는 결과를 정량적으로 얻었으며, 신호간의 채널 간섭은 신호의 세기가 감소하면 줄어드는 결과를 얻었다. 또한 신호로 사용되는 파장에서 충분히 멀리 떨어진 연속파동 레이저가 입사하는 경우에는 채널간의 신호간섭과 출력파형 변형이 감소하는 이득고정 효과가 나타남을 계산을 통하여 확인하였다.

• 한국세라믹학회지
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• 제38권11호
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• pp.973-979
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• 2001

Sn을 도핑한 In$_2$O$_3$(ITO) 박막을 R.F. 마그네트론 반응성 스퍼터링법에 의해서 증착하였다. 동일한 마그네트론 스퍼터링 조건에서 증착위치에 따른 ITO 박막의 저항, 자유 전하 농도 및 이동도 전기적 특성을 조사하였다. 동일한 마그네트론 스퍼터링 조건임에도 불구하고, ITO 박막의 전기적 특성은 증착위치에 따라 불균질성을 나타내었다. 타겟의 중심에 위치한 기판위에 증착된 ITO 박막의 저항은 최소 값인 2~4$\times$$10^{-4}$ $\Omega$.cm인 반면, 중심에서 멀어질수록 박막의 전기 저항은 대칭적으로 증가하였다. ITO 박막의 밀도 측정 결과도 중심에서 이론 밀도 값의 97%에 해당하는 7.0g/$cm^3$를 나타내나, 위치가 중심에서 멀어질수록 박막의 밀도가 대칭적으로 감소하였다. ITO 박막에서 이동도와 전도도는 밀도에 직접적으로 영향을 받는 것이 실험적으로 확인되었다. ITO 박막의 밀도가 7.0g/$cm^3$(이론 밀도의 97%)인 경우, 자유행정거리와 입자크기(=주상의 직경)가 동일한 값을 가지나, 밀도가 이 보다 감소하면 자유행정거리와 입자크기의 차이는 더욱 증가하였다. 이 결과는 ITO 박막의 밀도가 7.0g/$cm^3$인 경우는 입계가 자유 전자의 전도에 중요한 산란 원으로 작용하는 반면, 그 외의 경우는 결정 내의 공격자점, 공공, 기공 등이 다른 산란 원으로 작용하고 있다는 것을 나타낸다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• 한국표면공학회지
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• 제38권1호
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.