• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.7 no.4
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• pp.221-227
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• 2007

This paper introduces an on-line particle-filtering-based framework for failure prognosis in nonlinear, non-Gaussian systems. This framework uses a nonlinear state-space model of the plant(with unknown time-varying parameters) and a particle filtering(PF) algorithm to estimate the probability density function(pdf) of the state in real-time. The state pdf estimate is then used to predict the evolution in time of the fault indicator, obtaining as a result the pdf of the remaining useful life(RUL) for the faulty subsystem. This approach provides information about the precision and accuracy of long-term predictions, RUL expectations, and 95% confidence intervals for the condition under study. Data from a seeded fault test for a UH-60 planetary carrier plate are used to validate the proposed methodology.

• Journal of Korean Library and Information Science Society
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• v.16
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• pp.99-128
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• 1989

The purpose of this study is to examine the problems of the each cataloging rules about the physical description area that generated the greatest controversy in the cataloging of microcomputer software, and to suggest solutions of these problems. The results of the study can be summarized as follows: 1. Because the physical description area of materials is to identify the physical attributes of the carrier, file description might better described in the material specific details area. 2. Integrated software that related file is linked together need to be used terms that represented any type of software 3. It is desirable that the term 'computer' is to be used as a modifier to devide the carrier of microcomputer and other non book materials. 4. System requirements would better described in a note area rather than physical, description area. 5. It is desirable that other physical details such as recording density, tracks, etc., is to describe in the physical description area, since such information is to represent specifics of the carrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.17-27
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• 2000

In a SCH(separate confinement heterostructure) QW(quantum well) laser, we calculated the optical gain, the differential gain and recombination current in the QW and derived the bulk carrier density in the SCH region as a function of the QW current by using the analytical capture escape model. Based upon above relations, we found the optical gain and the differential gain correspond to the ratios of carrier and current injected into the QW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.252-253
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• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.397-400
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• 1990

All the existing PWM voltage-controlled inverters, regardless of the advantages of the operation, have produced serious problems such as acoustic noise. In this raper, the PMW technique for acoustic noise reduction is implemented using randomly modulated carrier modulation. By modulating the triangular carrier in sinusoidal PWM with band-limited white noise, it is shown that the acoutic noise level and spectral density is reduced in a tone. This method shows great merit in application the AC motor drive system to particularly environment.

• Journal of Communications and Networks
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• v.9 no.4
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• pp.466-472
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• 2007

Single carrier block transmission with frequency domain equalization(SC-FDE) has been shown to be a promising candidate in ultra-wideband(UWB) communications. In this paper, we analyze the performance of SC-FDE over UWB communications with channel estimation error. The probability density functions of the frequency domain minimum mean-squared error(MMSE) equalizer taps are derived in closed form. The error probabilities of single carrier block transmission with frequency domain MMSE equalization under imperfect channel estimation are presented and evaluated numerically. Compared with the simulation results, our semi-analytical analysis yields fairly accurate bit error rate performance, thus validating the use of the Gaussian approximation method in the performance analysis of the SC-FDE system with channel estimation error.

• Journal of information and communication convergence engineering
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• v.16 no.4
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.