• 한국전기전자재료학회논문지
• /
• 제30권1호
• /
• pp.23-26
• /
• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
• /
• pp.235-238
• /
• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• 전자통신동향분석
• /
• 제34권5호
• /
• pp.71-80
• /
• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• 한국재료학회지
• /
• 제31권10호
• /
• pp.586-591
• /
• 2021

This paper proposes a mathematical model that can calculate the luminescence characteristics driven by alternating current (AC) power using the current-voltage-luminance (I-V-L) properties of organic light emitting devices (OLED) driven by direct current power. Fluorescent OLEDs are manufactured to verify the model, and I-V-L characteristics driven by DC and AC are measured. The current efficiency of DC driven OLED can be divided into three sections. Region 1 is a section where the recombination efficiency increases as the carrier reaches the emission layer in proportion to the increase of the DC voltage. Region 2 is a section in which the maximum luminous efficiency is stably maintained. Region 3 is a section where the luminous efficiency decreases due to excess carriers. Therefore, the fitting equation is derived by dividing the current density and luminance of the DC driven OLED into three regions, and the current density and luminance of the AC driven OLED are calculated from the fitting equation. As a result, the measured and calculated values of the AC driving I-V-L characteristics show deviations of 4.7% for current density, 2.9 % for luminance, and 1.9 % for luminous efficiency.

• Journal of Information Display
• /
• 제2권3호
• /
• pp.1-5
• /
• 2001

The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.295-295
• /
• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.163.1-163.1
• /
• 2016

Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

• Transactions on Electrical and Electronic Materials
• /
• 제14권4호
• /
• pp.203-207
• /
• 2013

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

• 전기학회논문지
• /
• 제60권6호
• /
• pp.1255-1260
• /
• 2011

In this paper, we study on the reliability of Very High-rate Power Line Communication (VH-PLC) for Smart Grid, so that the resultant data rate is over 400Mbps at a physical layer. Firstly, reviewing the research trend of the PLC, we discuss the required techniques for supporting the Smart Grid. Considering a pre-specification with the value of several parameters, we investigate a multi-carrier modulation technique to overcome limitations of higher rate transmission under power line channel environments. Then, we propose a system specification of the VH-PLC in the sense of enhancing two features. One is resolving the problem of the co-existence of the deployed high-speed PLC according to the published standardization of KS X 4600-1 in Korea. The other is getting better performance on the grid adopting the diverse element techniques, such as multi-carrier modulation, a subcarrier utilization mode, a variable rate LDPC (Low Density Parity Check) code, and a time and frequency diversity technique. Further, a simulation tool, composed of an Event-Driven simulator and a Time-Driven simulator, is developed for the purpose of verifying the system performance and continuously cross-checking the test bench signal of the proposed VH-PLC system.

• Bulletin of the Korean Chemical Society
• /
• 제35권11호
• /
• pp.3261-3266
• /
• 2014

A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.