• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• Korean Journal of Materials Research
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• 제18권6호
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Journal of Korean Society on Water Environment
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• 제22권1호
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• pp.45-50
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• 2006

This study was performed to evaluate the air lift reactors (ALR) by variations of HRT and recycling rate. Air lift reactor was composed of bioreactor and clarifier above it. To remove organic matters and nitrogen through the formation of microbic film and filtration, bio-filter reactors were filled with clay, glass, bead, waste plastic, respectively. Influent wastewater was fed to biofilter reactor, and effluent wastewater from bio-filter reactor was injected ALR again, instead of adding external carbon source. Effluent BOD concentration was satisfied with lower than 10 mg/L in recycling rate 100% regardless of the variation of HRT and the kinds of media materials. In HRT 4 hr, recycling rate 100%, BOD removal efficiency rate was from about 85 to 90%, COD removal efficiency rate was higher than 90%. Effluent TN concentration was satisfied with less than 20 mg/L, if HRT was maintained by over than 6 hr regardless of recycling rate and media materials. Over than HRT was 4 hr, microbes concentration in air lift reactor was maintained over than 2,500 mg/L constantly, not sensitive to environmental condition, and organic removal was effective as it was higher.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권2호
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• pp.32-36
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• 2001

We investigate the surface order, defects and morphology of hexagonal columnar mesophases, Having a crown ether at one end which forms the center of the column and three fluorinated tails at the other, The orientation of the columns was successfully controlled by surface anchoring: Columns were aligned perpendicularly to an evaporated carbon surface, and the planar alignment do asymmetric compounds was induced by a water surface. TEM images show that there is a high degree of perfection in the packing do the cylinders. The hexagonal columnar mesophase (F(sub)h) was confirmed by direct images and the corresponding electron diffractions, where ordered cylindrical moieties are packed on a hexagonal lattice. The column of 12F8-ABG-15C5 was much straighter, compared with that of 12F8-AG-B15C5, resulting from the degrees of regular stacking. Elementary edge dislocation, grain boundary and +1/2 disclination have been observed, although the defects are generally rare.

• Proceedings of the KIEE Conference
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1490-1492
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• 1994

Diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPECVD at the condition of power of 800W, pressure of 80torr, $H_2$ flow rate of $75{\sim}81sccm$, $O_2$ flow rate of $0{\sim}3.8sccm$, $CH_4$ flow rate of $4.8{\sim}9sccm$, substrate temp, of $950{\sim}1010^{\circ}C$ and deposition time of 5hr. The deposited films were characterized by SEM, XRD and Raman spectroscopy. The growth rates of thin films and particles was measured. Good quality were synthesized at 40% of oxygen concentration which 6% of fixed metane concentration, and at 50%. Its deposition rates were $2.4{\mu}m/h$ respectively. As oxygen concentration increased, it was known that the broad peak of $1350 cm^{-1}$ was shifted to $1332cm^{-1}$ due to etching of carbon component.

• Journal of the Korean Electrochemical Society
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• 제7권4호
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• pp.167-172
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• 2004

3,4-dihydroxybenzaldehyde(3,4-DHB) was oxidatively el electropolymerized on glassy carbon (GC) electrodes to prepare CC/p-3,4-DHB type electrodes, which were subsequently modified with 3,4-dihydroxybenzoic acid(3,4-DHBA) using 0.05M HCI as a catalyst. The esterification reactions were performed between -OH sites on the polymeric film surface of the p-3,4-DHB and the -COOH sites within the 3,4-DHBA molecules in solution. These reactions had a rate constant value of $1.1\times10^{-1}\;s^{-1}$ for the esterification step as obtained from the first-order rate constant in the solution. The electrochemical responses of the GC/p-3,4-DHB-3,4-DHBA electrodes exert an influence upon the buffer solution, its pH and applied potential ranges. The redox process of the electrode was more easily controlled by charge transfer kinetics than that of the CC/p-3,4-DHB. The modified electrodes had redox active sites that were 10 times more active than those present before modification. The electrical admittance of the modified electrodes was also three times higher than that of the unmodified electrodes. After being annealed in ethanol for 20 hrs the electrodes brought about a 3.3 times greater change of water molecules in the redox reaction. The modified electrodes are stable in the potential range of 0.4 to 0.55V.

• Journal of Electrochemical Science and Technology
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• 제1권1호
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• pp.25-30
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• 2010

This study demonstrated the synthesis of high-surface-area metal-free carbonaceous electrodes (CE) from anodic aluminum oxide (AAO) templates, and their application as supercapacitors. Multi-walled Carbon nanotubes (MWCNTs) were interwoven into a porous network sheet that was attached to one side of AAO template through a vacuum filtration of the homogeneously dispersed MWCNT toluene solution. Subsequently, the conducting polymer was electrochemically grown into the porous MWCNT network and nanochannels of AAO, leading to the formation of a carbonaceous metal-free film electrode with a high surface area in the given geometrical surface area. Typical conducting polymers such as polypyrrole (PPY) and poly(3,4-ethylenedioxythiophene) (PEDOT) were examined as model systems, and the resulting electrodes were investigated as supercapacitors (SCs). These SCs exhibited stable, high capacitances, with values as high as 554 F/g, 1.08 F/$cm^2$ for PPY and 237 F/g, 0.98 F/$cm^2$ for PEDOT, that were normalized by both the mass and geometric area.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• 제25권11호
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• pp.103-112
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• 2011

This paper is tried to analysis the optical emission spectroscopy related to the position of inductive load coil and flow rates of methane and oxygen in the RF inductive plasma process. According to the position of load coil, peak of $H_{\alpha}$, $H_{\beta}$, and CH were appeared strongly at the middle position of the coil and it decreased both direction. The electron temperature was approximately 0.9[eV] at that position. Emission intensities of $H_{\alpha}$, $H_{\beta}$, and CH increased linearly by increasing input power. In addition, intensities of $H_{\alpha}$ and $H_{\beta}$ increased by increasing the flow rate of oxygen. It might be ascribed that the oxygen species were bonded with $C_nH_m$ by suppressing the combination with hydrogen atoms. Consequently, the optimal position of the inductive coil is decided to the intermediate position between 4th and 5th turns, the wanted carbon thin-film is possible to deposit by controlling flow rates of methane and oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제14권9호
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• pp.714-719
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.