• Journal of Welding and Joining
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• 제7권4호
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• pp.30-37
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• 1989

Effect of heat treatment on mechanical properties of an overlay weldment was investigated. Over welding was carried out on the structural C-Mn mild steel substrate to take required test specimens. Shielded metal arc welding process with 13Cr-0.2Ni stick electrode was applied. The heat treatment temperatures and holding times were $450{\circ}C., 550{\circ}C., 650{\circ}C., 750{\circ}C., 850{\circ}C.$ and 0.5hr, 2hr, 10hr, respectively. Mechanical tests and microscopic inspection were also carried out to investigate welds soundness. Test results indicated that carbon migration was dominant near bonded zone. At temperature of around 650.deg. C, carburized layer and decarburized layer were formed remarkably along overlay welds region and C-Mn mild steel region, respectively. The wideth of these layers became wider with increasing heat treatment temperature and/or holding time at the elevated temperature, and this relationship agreed with Larson-Miller parameter. Side bending test results demonstrated that the crack free region of overlay welds could be deduced from the relationship between temperature and holding time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• 자원환경지질
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• 제53권1호
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• pp.1-9
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• 2020

이산화탄소 고정화 및 탄산화 반응에는 칼슘(Ca)과 마그네슘(Mg)과 같은 알칼리토류 금속을 함유하고 있는 사문석(serpentine, Mg₃Si₂O₅(OH)₄) 규회석(wollastonite, CaSiO₃), 감람석(olivine, Mg₂SiO₄)과 같은 칼슘/마그네슘 실리케이트 광물(Ca/Mg-silicate mineral)들이 주로 이용되어 왔다. 특히 사문석은 탄산화가 가능한 자연물질 중 자연계 내에 풍부한 매장량을 갖고 있으며, 우수한 반응성 때문에 광물탄산화에 가장 적절한 출발물질로 인식되어 있다. 따라서 본 연구는 사문석을 출발물질로 사용하여 산성 용액 내에서 이산화탄소의 압력이 탄산화 효율에 미치는 영향력을 확인하고자 하였다. 탄산화 실험 조건은 황산용액 0.3~1 M, 반응온도 100℃ 및 150℃ 그리고 이산화탄소의 부분압력 0~3 MPa이며, 탄산화법은 수정된 직접탄산화법(modified direct method)으로 실시하였다. 또한 탄산화 효율을 높이고자 liquid pump로 NaOH 용액을 주입하여 pH를 13으로 조절하였다. 탄산화율은 황산의 농도 및 반응온도에 비례하여 증가하였으며, 3 MPa의 이화탄소를 주입한 조건에서의 탄산화율이 이산화탄소를 첨가하지 않은 조건의 탄산화율보다 높았다. 반응결과 황산용액 1 M과 이산화탄소 부분압 3 MPa, 반응온도 150℃에서 용출 및 탄산화 실험 후 약 85%의 상당히 높은 탄산화율이 분석되었다. 따라서 산성용액에서 이산화탄소의 압력이 사문석 내의 Mg 용출에 영향을 미치는 것으로 확인되었다. Mg의 용해속도는 Si의 용해속도보다 높아 반응 후 사문석의 Mg : Si의 비가 약 1.5에서 0.1미만으로 급속하게 감소하여, 사문석의 구조 내에 불완전한 Si 사면체 층 골격구조(Mg-depleted skeletal phase)가 분석되었다.