• Journal of Welding and Joining
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• v.7 no.4
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• pp.30-37
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• 1989

Effect of heat treatment on mechanical properties of an overlay weldment was investigated. Over welding was carried out on the structural C-Mn mild steel substrate to take required test specimens. Shielded metal arc welding process with 13Cr-0.2Ni stick electrode was applied. The heat treatment temperatures and holding times were $450{\circ}C., 550{\circ}C., 650{\circ}C., 750{\circ}C., 850{\circ}C.$ and 0.5hr, 2hr, 10hr, respectively. Mechanical tests and microscopic inspection were also carried out to investigate welds soundness. Test results indicated that carbon migration was dominant near bonded zone. At temperature of around 650.deg. C, carburized layer and decarburized layer were formed remarkably along overlay welds region and C-Mn mild steel region, respectively. The wideth of these layers became wider with increasing heat treatment temperature and/or holding time at the elevated temperature, and this relationship agreed with Larson-Miller parameter. Side bending test results demonstrated that the crack free region of overlay welds could be deduced from the relationship between temperature and holding time.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Economic and Environmental Geology
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• v.53 no.1
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• pp.1-9
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• 2020

Magnesium silicate minerals such as serpentine [Mg₃Si₂O₅(OH)₄] have a high potential for the sequestration of CO₂; thus, their reactivity toward dissolution under CO₂-free and CO₂-containing conditions in acidic solvents is a critical process with respect to their carbonation reactions. To examine the carbonation efficiency and dissolution mechanism of serpentine, hydrothermal treatment was performed to the starting material via a modified direct aqueous carbonation process at 100 and 150℃. The serpentine dissolution experiments were conducted in H₂SO₄ solution with concentration range of 0.3-1 M and at a CO₂ partial pressure of 3 MPa. The initial pH of the solution was adjusted to 13 for the carbonation process. Under CO₂-free and CO₂-containing conditions, the carbonation efficiency increased in proportion to the concentration of H₂SO₄ and the reaction temperature. The leaching rate under CO₂-containing conditions was higher than that under CO₂-free conditions. This suggests that shows the presence of CO₂ affects the carbonation reaction. The leaching and carbonation efficiencies at 150℃ in 1 M H₂SO₄ solution under CO₂-containing conditions were 85 and 84%, respectively. The dissolution rate of Mg was higher than that of Si, such that the Mg : Si ratio of the reacted serpentine decreased from the inner part (approximately 1.5) to the outer part (less than 0.1). The resultant silica-rich layer of the reaction product ultimately changed through the Mg-depleted skeletal phase and the pseudo-serpentine phase to the amorphous silica phase. A passivating silica layer was not observed on the outer surface of the reacted serpentine.