• Journal of Environmental Health Sciences
• /
• v.26 no.2
• /
• pp.97-107
• /
• 2000

PCBs [Polychlorinated biphenyls] are halogenated aromatic compounds with the empirical formula C12H10-nCln(n=1~10), and are a mixture of possible 209 different chlorinated congeners. PCBs were widely used as dielectric fluids for capacitors, transformers, plasticizers, lubricant inks, and paint additives. once released into the environment, PCBs persist for years because they are so resistant to degradation. In addition to their high degree of lipophilicity. In 1970s, the worldwide production of PCBs seem to be still in use. The environmental load of PCBs was prohibited since 1983 in Korea. In spite of these actions, many PCBs seem to be still in use. The environmental load of PCBs will continue to be recycled through air, land, water, and the biosphere for decades to come. This study was conducted to measure the concentrations of PCBs I the serum samples of 112 women by GC/MSD(Hewlett Packard 5897 Gas Chromatography-Mass Chromatography Detector) and CG/ECD(Hewlett Packard 5890 series-II gas chromatography-Electron capture detector, U.S.A). The main results of this study were as follows; The mean and standard deviation of serum PCBs were 3.613, 0.759 ppb, respectively and median of it was 3.828 ppb. The correlation coefficients of the concentrations of 13 PCB congeners ranged from 0.7913 to 0..9985 and were significantly correlated between each items(p=0.0001). The PCB concentrations were positively associated with age(simple linear regression; R2=0.86, =0.08023, p<0.001) and with total lipids in serums(simple linear regression; R=0.7058, =0.00486, p<0.001). The age adjusted model (Y=$\beta$0+$\beta$1age+$\beta$2X) was applied for possible predictors of PCBs levels in serum. For BMI(Body Mass Index), major residential area, and fish, meat, and dairy consumption, there was no association with PCBs levels, Also there was negative association for the number of pregnancy and lactation period with PCBs levels.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.49-53
• /
• 1999

In this study, the characteristics of the structure of buried type capacitor for RF multi- chip-module are investigated. We developed many kinds of structures to minimize the space of capacitor in module and the value of parastic series inductance without any loss in capacitance, and in this procedure the effect of vias especially position, size, number length are analyzed and optimized. This characteristics of structures are checked through HFSS(high frequency structure simulator) of HP, and the value of parastic series inductance is calculated by equivalent circuit analysis. And ensuing the result of simulation, we made buried type capacitors using LTCC (low temperature cofired ceramic) material. In measurement of this sample, we found out the effective and precise method can be applied to buried type and characteristics of vias and striplines added for measuring are quantified.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.12 no.1
• /
• pp.58-68
• /
• 1998

A computer-controlled system for measuring dielectric hysteresis has been developed. This system consists of the wave generation par\, the high voltage amplifier part, the measurement part, the data acquisition part and the related controll circuits and is interfaced to P.C(personal computer). The applied voltage and its frequency are controlled by P.C . Since the measured datas can be saved in the RAM of P.C, the analysis and the graphics of the datas are very convenient. As a accuracy test, the capcitances of the commercial mica and styroll capacitors were measured by applying high voltage and the results were good agreement with the rating values. In the test of PZT ceramic sample, the typical D-E hysteresis loops were obtained by applying a single frequency voltage to the sample, and $\varepsilon-E$ and D-E hysteresis loops could be measured at the same time by applying a double frequency voltage to the sample.sample.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.4
• /
• pp.815-820
• /
• 2004

The parallel operation of voltage source inverters using stator windings of high power three-phase induction motors was proposed in this paper. Most current high power induction motors with more than 4 electric poles have their external terminals installed so that windings of each phase can be approached from the outside. High power induction motors can be driven by parallel-operating several voltage source inverters through these external terminals. This way, in case a certain inverter breaks down, the operation torque will get decreased but the system can maintain its operation with the other inverters, so it can cope more effectively with breakdowns. Moreover, by providing phase difference to the switching movements of each inverter, it can increase equivalent switching frequency, which helps achieve good characteristics such as the reduction in the ripple of output torque, the reduction in the ripple of input current, and the reduction in the size of DC capacitors. Besides, since power is divided into each inverter, it can also decrease the ifluence of EMI occurring in the system. The characteristics of the proposed method were proved through computer simulations in this paper.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.2
• /
• pp.685-688
• /
• 2005

An efficient sustain driver and a useful reset circuit composition technique are proposed for plasma display panel drive. The proposed sustain driver uses a series resonance between an external inductor and a panel to recover the energy dissipated by a capacitive displacement current of PDP. It consists of four switching devices, an inductor, and external capacitors, which supply sustain voltage sources. Although the amplitude of an input voltage source is twice as high as that of conventional sustain drivers, average voltage stress imposed on power switching devices is nearly same in their values. Moreover, the input voltage source can be directly applied for the use of a reset voltage source. Owing to this scheme, the proposed sustain driver and the embedded reset circuit have a simple configuration. The operational principle and design example are given with theoretical analyses. The validity of the proposed drive system is verified through experiments using a prototype equipped with a 7.5-inch-diagonal AC plasma display panel.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.2
• /
• pp.353-360
• /
• 2017

Recently, due to physical limitation of Si based power semiconductor, development speed of switching power semiconductors is falling and it is difficult to expect any further performance improvements. SiC based power semiconductor with superior characteristic than Si-based power semiconductor have been developed to overcome these limitations. however, there is not method to apply for real system. Therefore, suggested the feasibility and solution for SiC-based power semiconductor system. design to 1kW class DC-DC boost converter and demonstrated the superiority of SiC MOSFET under the same operating conditions by analyzing switching frequency, duty ratio, voltage and current, and comparing with Si based power semiconductor through experimental efficiency according to each system load. The SiC MOSFET has high efficiency and fast switching speed, and can be designed with small inductors and capacitors which has the advantage of volume reduction of the entire system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.364-368
• /
• 1997

We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.319-325
• /
• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1990.10a
• /
• pp.65-67
• /
• 1990

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.7
• /
• pp.575-582
• /
• 2000

The Electrical conduction and optical properties of Ta$_{2}$/O$_{5}$ thin films as the insulators in DRAM capacitors were studied. Liquid Ta/sib 2//O sub 5/ were prepared by a sol-gel processing and multiple layers were applied by spin-coating up to thickness of 800$\AA$. At annealing temperature of 300~$600^{\circ}C$ the electrical conduction and specific dielectric constant were discussed the behaivor of carrier were observed by the Thermally Stimulated Current (TSC) at the temperature range of 30~23$0^{\circ}C$. At annealing temperature of 300~$600^{\circ}C$ the samples were found to be amorphous below $600^{\circ}C$ and crystalline over it. The electrical strength was about 2.2 MV/cm at 40$0^{\circ}C$. In spite of noncrystallization over 50$0^{\circ}C$ the increasing of leakage current due to pinholes and increasing creak. The refractive index was obtained maximum (2.2) at 40$0^{\circ}C$. The dielectric constant was obtained maximum(18.6) at 40$0^{\circ}C$. TSC was observed one peak at the temperature range of 30~23$0^{\circ}C$ from sample at 40$0^{\circ}C$. In the case of collecting voltage the peak size is decreased in proportion to collecting voltage and then the peak may be thought carrier to be a ionic space charge.e.