• Journal of Power Electronics
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• v.10 no.2
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• pp.115-124
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• 2010

In this paper, a simple yet efficient auto mode-hop ripple control structure for buck converters with light load operation enhancement is proposed. The converter, which operates under a wide range of input and output voltages, makes use of a state-dependent hysteretic comparator. Depending on the output current, the converter automatically changes the operating mode. This improves the efficiency and reduces the output voltage ripple for a wide range of output currents for given input and output voltages. The sensitivity of the output voltage to the circuit elements is less than 14%, which is seven times lower than that for conventional converters. To assess the efficiency of the proposed converter, it is designed and implemented with commercially available components. The converter provides an output voltage in the range of 0.9V to 31V for load currents of up to 3A when the input voltage is in the range of 5V to 32V. Analytical design expressions which model the operation of the converter are also presented. This circuit can be implemented easily in a single chip with an external inductor and capacitor for both fixed and variable output voltage applications.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.6
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• pp.469-475
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• 2017

Using impedance matching techniques as a way to increase system power transferability in capacitive wireless power transmission has been widely investigated in conventional studies. However, these techniques tend to increase the circuit volume and thus counterbalance the advantage of the simplicity in the energy link structure. In this paper, a compact circuit topology with one leakage-enhanced transformer is proposed in order to minimize the circuit volume for the capacitive power transfer system. This topology achieves a reactive compensation, and the system quality factor value can be reduced by the turn ratio. As a result, this topology not only reduces the overall system volume but also minimizes the voltage stress of the link capacitor. An optimal design guideline for the leakage-enhanced transformer is also presented. The advantages of the proposed scheme over the conventional method in terms of power efficiency and circuit volume are revealed through an analytic comparison. The feasibility of applying the new topology is also verified by conducting 50 W hardware tests.

• Journal of Surface Science and Engineering
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• v.49 no.2
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• pp.191-195
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• 2016

Among the lithium metal oxides for hybrid-capacity, $Li_4Ti_5O_{12}(LTO)$ is an emerging electrode material as zero-stain material in volume change during the with the charging and discharging processes. However, LTO has a limitation of low ionic and electronic conductivity. To enhance the ionic and electronic properties of $Li_4Ti_5O_{12}(LTO)$, we synthesized the spherical LTO/CNT composite by sol-gel process for hybrid capacitors. CNT interconnection networks between CNT-LTO particles enhanced electronic conductivity and electrochemical charging/discharging properties. All of the LTO samples was observed to show the spinel structure and spherical morphology with the diameter of $5{\sim}10{\mu}m$. Especially, spherical LTO/CNT composite of the CNT-3 wt% showed the enhanced capacity from 110 mAh/g to 140 mAh/g at 10 C.

• Journal of Power Electronics
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• v.15 no.4
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• pp.910-919
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• 2015

The use of a PV grid-connected inverter with non-isolated topology and without a transformer is good for improving conversion efficiency; however, this inverter has become increasingly complicated for eliminating leakage current. To simplify the complicated architecture of traditional three-level dual buck inverters, a new dual Buck three-level PV grid-connected inverter topology is proposed. In the proposed topology, the voltage on the grounding stray capacitor is clamped by large input capacitors and is equal to half of the bus voltage; thus, leakage current can be eliminated. Unlike in the traditional topology, the current in the proposed topology passes through few elements and does not flow through the body diodes of MOSFET switches, resulting in increased efficiency. Additionally, a multi-loop control method that includes voltage-balancing control is proposed and analyzed. Both simulation and experimental results are demonstrated to verify the proposed structure and control method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.42-42
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• 2007

In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.264-264
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• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.147-149
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• 2002

Recently, the study on development of electrical and electronic device is done to set miniature, high degrees of integration and efficiency by using inorganic materials the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.436-437
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indum-tin oxide (ITO) anodes using $O_2$ gas and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $O_2$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/Alq3/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $O_2$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The impedance spectroscopy measurement of the devices with the $O_2$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.541-542
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• 2006

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP 20 : carbon black : PTFE = 95-X : X : 5 wt.%. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP 20 : carbon black : PTFE = 80 : 15 : 5 wt.%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability between $0.5mA/cm^2{\sim}100mA/cm^2$ current density and the lowest ESR.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.