• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• 한국진공학회지
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• 제11권1호
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• pp.76-80
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• 2002

외관 전극의 용량성 결합에 의하여 동작되는 형광램프의 특성을 조사하였다. 외관전극 형광램프는 10 mA 이하의 저전류와 약 1.5 kV의 고전압으로 구동된다. 구동 주파수 100 kHz 이하의 구형파 구동에 의하여 효율 40 lm/W의 20,000~30,000 cd/$\textrm m^2$의 고휘도를 실현하였다. 외관전극의 길이가 길수록 휘도와 효율이 증가하지만, 전극 길이가 3 cm 이상에서 그 증가율이 둔화된다.

• 한국진공학회지
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• 제6권3호
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• pp.213-219
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• 1997

본 연구에서는 내전극 정전결합 유동가스형 반응장치를 이용하여 플라즈마 중합 스 티렌 박막을 제작하고 적외선분광스펙트럼, 열분해가tm크로마토그래피, 시차주사열량계 및 겔투과성 크로마토그래피의 분석을 통하여 중합조건이 분자구조 및 분자량 분포에 미치는 영향을 조사하였다. 위의 결과로부터 개시 모노머의 화학적 특성과는 다른 고도로 가교된 박막이 생성되었으며, 방전압력, 방전전력 및 가스의 유량 등의 중합조건 조절에 의해 분자 구조, 가교도, 분자량 분포 등의 제어가 가능함이 판명되었다. 따라서 내전극 정전결합 유동 가스형 반응장치에 의해 수행된 플라즈마중합법은 중합조건의 조절에 의해 센서의 감지막, 광도전성 소자 및 포토 레지스트 등에 응용가능한 기능성 유기박막의 제작에 좋은 특성을 나타내는 것을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.66-71
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• 1998

Plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films were produced using an electrode capacitively coupled apparatus. Fourier transform infrared spectroscopy analysis indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Auger electron spectroscopy analysis indicated that the permeation depth of aluminum into the films is ca. 30nm when top electrode is deposited by evaporation aluminum. The increase of relative dielectric constant and decrease of dielectric loss tangent with the discharge power is originated from high cross-link of the films.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.1-5
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• 2014

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

• 대한의용생체공학회:의공학회지
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• 제37권5호
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• pp.161-167
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• 2016

Recent technological advances in sensor fabrication and bio-signal processing enabled non-constraint and non-intrusive measurement of human bio-signals. Especially, non-constraint measurement of ECG makes it available to estimate various human health parameters such as heart rate. Additionally, non-constraint ECG measurement of wheelchair user provides real-time health parameter information for emergency response. For accurate emergency response with low false alarm rate, it is necessary to discriminate quality levels of ECG measured using non-constraint approach. Health parameters acquired from low quality ECG results in inaccurate information. Thus, in this study, a machine learning based approach for three-class classification of ECG quality level is suggested. Three sensors are embedded in the back seat, chest belt, and handle of automatic wheelchair. For the two sensors embedded in back seat and chest belt, capacitively coupled electrodes were used. The accuracy of quality level classification was estimated using Monte Carlo cross validation. The proposed approach demonstrated accuracy of 94.01%, 95.57%, and 96.94% for each channel of three sensors. Furthermore, the implemented algorithm enables classification of user posture by detection of contacted electrodes. The accuracy for posture estimation was 94.57%. The proposed algorithm will contribute to non-constraint and robust estimation of health parameter of wheelchair users.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.875-878
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• 1992

In this study, We made use of inter-electrode capacitively coupled type plasma polymerization apparatus in order to make the organic optical thin films. We adopted in Benzen. Vinyl-Pyridine and Styrene, which have optical function in the organic world and manufactured double later. It is examined optics properties by it respectively. At the middle wave length as 550[nm], the transmittance is double layer smaller than one of single layer. The refractive index with wave length is various from 1.55 to 1.65. Then, it is known that measured results are valid because the extinction coefficient(K) is about $10^{-4}$ for variation of refractive index.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.43-47
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• 2001

Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1343-1345
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.