• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.145-145
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• 2011

Recently, multi-hole electrode RF capacitively coupled plasma discharge is being used in the deposition of microcrystalline silicon for thin film solar cell to increase the speed of deposition. To make efficient multi-hole electrode RF capacitively coupled plasma discharge, the hole diameter is to be designed concerning the plasma parameters. In past studies, the relationship between plasma parameters such as pressures and gas species, and hole diameter for efficient plasma density enhancement is experimentally shown. In the presentation, the relationship between plasma deriving frequency and hole diameter for efficient multi-hole electrode RF capacitively coupled plasma discharge is shown. In usual capacitively coupled plasma discharge, plasma parameter, such as plasma density, plasma impedence and plasma temperature, change as frequency increases. Because of the change, the optimum hole diameter of the multi-hole electrode RF capacitively coupled plasma for high density plasma is thought to be modified when the plasma deriving frequency changes. To see the frequency effect on the multi-hole RF capacitively coupled plasma is discharged and one of its electrode is changed from a plane electrode to a variety of multi-hole electrodes with different hole diameters. The discharge is derived by RF power source with various frequency and the plasma parameter is measured with RF compensated single Langmuir probe. The shrinkage of the hole diameter for efficient discharge is observed as the plasma deriving frequency increases.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.601-605
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

• Journal of electromagnetic engineering and science
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• 제9권3호
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• pp.164-173
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• 2009

In this paper, two new circuit structures for European and U.S. ultra-wide band(UWB) bandpass filters(BPFs) with sharp roll-off characteristics are introduced. We show first that the ultra-wide bandpass property is obtained from a $\lambda$/4 open T resonator with a capacitively coupled $\lambda$/4 short-circuited line, which provides two attenuation poles at lower and upper cutoff frequencies. Then, two identical capacitively coupled input/output lines, which can be $\lambda$/4-length open ends or $\lambda$/2-length short ends, with the T-resonator, are adopted to suppress lower and higher frequency components outside of the pass band. There is coupling between the input and output lines providing two additional transmission zeros in the lower and upper transition bands of the filter. Since the coupling between the T-resonator with the $\lambda$/4 short-circuited line and the input/output lines limits the bandwidth of the filter to the European UWB band, both the $\lambda$/4 short-circuited line and the input/output lines are inserted between the two stacked T-resonators for the U.S. UWB band. The filter structures are simulated with ADS and HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results.

• Journal of electromagnetic engineering and science
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• 제10권3호
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• pp.92-98
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• 2010

A new wideband bandstop filter(BSF) with a sharp roll-off characteristic is introduced in a stripline structure in this paper. The BSF consists of two sections: the first is two capacitively coupled $\lambda/4$ short-circuited lines with opposite ground positions, while the second is a capacitively coupled $\lambda/4$ short-circuited line. The BSF provides three transmission zeros within the stopband and better than 22 dB rejection over the whole wireless local area network (WLAN) band from 5.15 to 5.825 GHz. The BSF, cascaded to an U.S. ultra-wideband(UWB: 3.1~10.6 GHz) band-pass filter(BPF), is simulated with HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape with a dielectric constant of 7.8. The measurement results agree well with the HFSS simulation results. The size of the UWB BPF including the BSF is $3{\times}6.3\times0.45\;mm^3$.

• 융합신호처리학회논문지
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• 제13권1호
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• pp.44-49
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• 2012

간접접촉 심전도 측정(Indirect-Contact ECG)은 일상생활에서의 무구속 무자각 측정에 적합한 새로운 심전도 측정 방법이다. 간접접촉 심전도 측정 에 서 관측되는 큰 배경 잡음을 줄이기 위한 기초 연구로서, 본 연구에서는 간접 접촉 심전도에서 사용되는 용량성 결합 능동 전극(Capacitively coupled active electrode)의 열잡음(Thermal Noise) 모델을 구성하였다. 실험을 통해, 용량성 결합 능동 전극만의 배경 잡음의 크기가 열잡음 모델에서 예상한 수준과 거의 일치함을 확인하였다. 면으로 된 직물의 실제의 전기적 특성을 열잡음 모델에 적용하여, 면 위에서 측정된 간접접촉 심전도의 이론적 열잡음을 계산하였다. 이 연구를 통해, op-amp의 내부 잡음(intrinsic noise)은 저항에 의한 열잡음에 비해 무시할 수 있을 정도로 작음을 알 수 있었다. 그리고 열잡음의 크기와 능동 전극의 입력 저항간의 관계를 도출할 수 있게 되어, 능동 전극의 입력 저항의 최적 값 선정을 위한 향후 연구의 기반이 되었다.

• 한국진공학회지
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• 제17권5호
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• pp.400-407
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• 2008

본 연구에서는 축전 결합형 플라즈마원에 대한 전자기장의 2차원 공간 의존성을 계산하였다. 1차원 유체 방정식을 기반으로 축전 전기장과 전도 전류 밀도의 axial 방향 공간 의존성을 계산한 후, radial 방향으로는 맥스웰 방정식의 해를 ${\omega}r/c$에 대한 power series로 전개하여 전자기장의 2차원 공간 의존성을 계산하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.203-203
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• 2013

Low pressure plasmas play a key role in many areas including electronic, aerospace, automotive, biomedical, and toxic waste management industries, and the advantages of the plasma are well known the processing procedure is established. However, the insight behavior of the discharges remains a mystery, even though a simple geometry as capacitive discharges. In this work, we measured RF power dissipation in capacitively coupled plasma (CCP) at various experiment conditions with potential probe and RF current probe. Through the results, we will have a clearer view of the inner nature of the CCP.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.118-123
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• 2023

Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

• Applied Science and Convergence Technology
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• 제24권4호
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• pp.102-110
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• 2015

Fluid model based numerical analysis is done to simulate a plasma processing system with electrodes at floating potential. $V_f$ is a function of electron temperature, electron mass and ion mass. Commercial plasma fluid simulation softwares do not provide options for floating electrode boundary value condition. We developed a user subroutine in CFD-ACE+ and compared four different cases: grounded, dielectric, zero normal electric field and floating electric potential for a 2D-CCP (capacitively coupled plasma) with a ring electrode.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.133-133
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• 2006