• Title/Summary/Keyword: Capacitive type sensor

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A low cost miniature PZT amplifier for wireless active structural health monitoring

  • Olmi, Claudio;Song, Gangbing;Shieh, Leang-San;Mo, Yi-Lung
    • Smart Structures and Systems
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    • v.7 no.5
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    • pp.365-378
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    • 2011
  • Piezo-based active structural health monitoring (SHM) requires amplifiers specifically designed for capacitive loads. Moreover, with the increase in number of applications of wireless SHM systems, energy efficiency and cost reduction for this type of amplifiers is becoming a requirement. General lab grade amplifiers are big and costly, and not built for outdoor environments. Although some piezoceramic power amplifiers are available in the market, none of them are specifically targeting the wireless constraints and low power requirements. In this paper, a piezoceramic transducer amplifier for wireless active SHM systems has been designed. Power requirements are met by two digital On/Off switches that set the amplifier in a standby state when not in use. It provides a stable ${\pm}180$ Volts output with a bandwidth of 7k Hz using a single 12 V battery. Additionally, both voltage and current outputs are provided for feedback control, impedance check, or actuator damage verification. Vibration control tests of an aluminum beam were conducted in the University of Houston lab, while wireless active SHM tests of a wind turbine blade were performed in the Harbin Institute of Technology wind tunnel. The results showed that the developed amplifier provided equivalent results to commercial solutions in suppressing structural vibrations, and that it allows researchers to perform active wireless SHM on moving objects with no power wires from the grid.

Development of Multi-Axis Control Program for Long Range AFM Using an FPGA Module (FPGA 모듈을 이용한 Long Range AFM용 다축 제어 프로그램 개발)

  • Lee J.Y.;Eom T.B.;Kim J.W.;Kang C.S.;Kim J.A.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.289-290
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    • 2006
  • In general, atomic force microscope (AFM) used for metrological purpose has measuring range less than a few hundred micrometers. We design and fabricate an AFM with long measuring range of $200mm{\times}200mm$ in X and Y axes. The whole stage system is composed of surface plate, global stage, microstage. By combining global stage and microstage, the fine and long movement can be provided. We measure the position of the stage and angular motions of the stage by laser interferometer. A piezoresistive type cantilever is used for compact and long term stability and a flexure structure with PZT and capacitive sensor is used for Z axis feedback control. Since the system is composed of various actuators and sensors, a real time control program is required for the implementation of AFM. Therefore, in this work, we designed a multi-axis control program using a FPGA module, which has various functions such as interferometer signal converting, PID control and data acquisition with triggering. The control program achieves a loop rate more than 500 kHz and will be applied for the measurement of grating pitch and step height.

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Development of Flexure Applied Bond head for Die to Wafer Hybrid Bonding (Die to Wafer Hybrid Bonding을 위한 Flexure 적용 Bond head 개발)

  • Jang, Woo Je;Jeong, Yong Jin;Lee, Hakjun
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.171-176
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    • 2021
  • Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

Porous silicon : a new material for microsensors and microactuators (다공질 실리콘: 새로운 마이크로센서 및 마이크로액추에이터 재료)

  • Min Nam Ki;Chi Woo Lee;Jeong Woo Sik;Kim Dong Il
    • Journal of the Korean Electrochemical Society
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    • v.2 no.1
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    • pp.17-22
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    • 1999
  • Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.