• Title/Summary/Keyword: Capacitive sensing

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A Multi-purpose Fingerprint Readout Circuit Embedding Physiological Signal Detection

  • Eom, Won-Jin;Kim, Sung-Woo;Park, Kyeonghwan;Bien, Franklin;Kim, Jae Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.793-799
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    • 2016
  • A multi-purpose sensor interface that provides dual-mode operation of fingerprint sensing and physiological signal detection is presented. The dual-mode sensing capability is achieved by utilizing inter-pixel shielding patterns as capacitive amplifier's input electrodes. A prototype readout circuit including a fingerprint panel for feasibility verification was fabricated in a $0.18{\mu}m$ CMOS process. A single-channel readout circuit was implemented and multiplexed to scan two-dimensional fingerprint pixels, where adaptive calibration capability against pixel-capacitance variations was also implemented. Feasibility of the proposed multi-purpose interface was experimentally verified keeping low-power consumption less than 1.9 mW under a 3.3 V supply.

A Low Noise Low Power Capacitive Instrument Amplifier for Bio-Potential Detection (생체 신호 측정용 저 잡음 저 전력 용량성 계측 증폭기)

  • Park, Chang-Bum;Jung, Jun-Mo;Lim, Shin-Il
    • Journal of Sensor Science and Technology
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    • v.26 no.5
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    • pp.342-347
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    • 2017
  • We present a precision instrument amplifier (IA) designed for bio-potential acquisition. The proposed IA employs a capacitively coupled instrument amplifier (CCIA) structure to achieve a rail-to-rail input common-mode range and low gain error. A positive feedback loop is applied to boost the input impedance. Also, DC servo loop (DSL) with pseudo resistors is adopted to suppress electrode offset for bio-potential sensing. The proposed amplifier was designed in a $0.18{\mu}m$ CMOS technology with 1.8V supply voltage. Simulation results show the integrated noise of $1.276{\mu}Vrms$ in a frequency range from 0.01 Hz to 1 KHz, 65dB SNR, 118dB CMRR, and $58M{\Omega}$ input impedance respectively. The total current of IA is $38{\mu}A$. It occupies $740{\mu}m$ by $1300{\mu}m$ including the passive on-chip low pass filter.

COS MEMS System Design with Embedded Technology (Embedded 기술을 이용한 COS MEMS 시스템 설계)

  • Hong, Seon Hack;Lee, Seong June;Park, Hyo Jun
    • KEPCO Journal on Electric Power and Energy
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    • v.6 no.4
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    • pp.405-411
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    • 2020
  • In this paper, we designed the COS MEMS system for sensing the falling detection and explosive noise of fuse link in COS (Cut Out Switch) installing on the power distribution. This system analyzed the failure characteristics and an instantaneous breakdown of power distribution. Therefore, our system strengths the industrial competence and guaranties the stable power supply. In this paper, we applied BLE (Bluetooth Low Energy) technology which is suitable protocol for low data rate, low power consumption and low-cost sensor applications. We experimented with LSM6DSOX which is system-in-module featuring 3 axis digital accelerometer and gyroscope boosting in high-performance mode and enabling always-on low-power features for an optimal motion for the COS fuse holder. Also, we used the MP34DT05-A for gathering an ultra-compact, low power, omnidirectional, digital MEMS microphone built with a capacitive sensing element and an IC interface. The proposed COS MEMS system is developed based on nRF52 SoC (System on Chip), and contained a 3-axis digital accelerometer, a digital microphone, and a SD card. In this paper of experiment steps, we analyzed the performance of COS MEMS system with gathering the accelerometer raw data and the PDM (Pulse Data Modulation) data of MEMS microphone for broadcasting the failure of COS status.

An Integrated Sensor for Pressure, Temperature, and Relative Humidity Based on MEMS Technology

  • Won Jong-Hwa;Choa Sung-Hoon;Yulong Zhao
    • Journal of Mechanical Science and Technology
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    • v.20 no.4
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    • pp.505-512
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    • 2006
  • This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

A Study on Nano-Accelerometer based on Carbon Nanotube (탄소나노튜브 기반의 나노-가속도계에 관한 연구)

  • Song, Young-Jin;Lee, Jun-Ha
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.1
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    • pp.91-95
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    • 2009
  • We investigated the characteristics of a capacitive nano-accelerometer based on carbon nanotube by means of classical molecular dynamics simulations. The position of the telescoping nanotube was controlled by the externally applied force and the feedback sensing was achieved from the capacitance change. Considering energy dissipation, the oscillation features of the nano-accelerometers were similar, regardless of their initial displacements. The capacitance variations, which were almost linearly proportional to the applied acceleration, were monitored within an error tolerance.

Fabrication Uncertainty and Noise Issues in High-Precision MEMS Actuators and Sensors

  • Cho, Young-Ho;Lee, Won-Chul;Han, Ki-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.4
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    • pp.280-287
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    • 2002
  • We present technical issues involved in the development of actuators and sensors for applications to high-precision Micro Electro Mechanical System (MEMS). The technical issues include fabrication uncertainty and noise disturbance, causing major difficulties for MEMS to achieve high-precision actuation and detection functions. For nano-precision actuators, we solve the fabrication instability and electrical noise problems using digital actuators coupled with nonlinear mechanical modulators. For the high-precision capacitive sensors, we present a branched finger electrodes using high-amplitude anti-phase sensing signals. We also demonstrate the potential applications of the nanoactuators and nanodetectors to high-precision positioning MEMS.

A Study on Cutting Force Measurement Using Cylindrical Capacitance-Type Spindle Displacement Sensor (주축 변위 센서를 이용한 절삭력 측정에 관한 연구)

  • 김일해;박만진;장동영;한동철
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2001.04a
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    • pp.89-94
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    • 2001
  • A cylindrical capacitance-type spindle displacement sensor was designed and tested in the hard turning as a way to develop a sensor that can estimate cutting forces without using a tool dynamometer. The displacement sensor was installed between the face of spindle cover and the chucking element, and measured pure radial motion of the spindle. Ceramic inserts and tool steel workpieceof 65 Rc were used during the hard turning tests. The signals from the sensor showed the same pattern of cutting force variations as those from the tool dynamometer. The research results showed that the developed sensor could be utilized as an effective and cheap on-line sensing device to estimate cutting forces.

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Incident-angle-based Selective Tunability of Resonance Frequency in Terahertz Planar Metamolecules

  • Lim, A Young;Lee, Joong Wook
    • Current Optics and Photonics
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    • v.6 no.6
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    • pp.590-597
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    • 2022
  • We carry out numerical simulations of the responses of planar metamaterials composed of metamolecules under obliquely incident terahertz waves. A Fano-like-resonant planar metamaterial, with two types of resonance modes originating from the two meta-atoms constituting the meta-molecules, exhibits high performance in terms of resonance strength, as well as the outstanding ability to manipulate the resonance frequency by varying the incident angle of the terahertz waves. In the structure, the fundamental electric dipole resonance associated with Y-shaped meta-atoms is highly tunable, whereas the inductive-capacitive resonance of C-shaped meta-atoms is relatively omnidirectional. This is attributed to the electric near-field coupling between the two types of meta-atoms. Our work provides novel opportunities for realizing terahertz devices with versatile functions, and for improving the versatility of terahertz sensing and imaging systems.

Self Displacement Sensing (SDS) Nano Stage

  • Choi, Soo-Chang;Park, Jeong-Woo;Kim, Yong-Woo;Lee, Deug-Woo
    • International Journal of Precision Engineering and Manufacturing
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    • v.8 no.2
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    • pp.70-74
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    • 2007
  • This paper describes the development of a nano-positioning system for nanoscale science and engineering. Conventional positioning systems, which can be expensive and complicated, require the use of laser interferometers or capacitive transducers to measure nanoscale displacements of the stage. In this study, a new self-displacement sensing (SDS) nano-stage was developed using mechanical magnification of its displacement signal. The SDS nano-stage measured the displacement of its movement using a position-sensitive photodiode (PSPD), a laser source, and a hinge-connected rotating mirror plate. A beam from a laser diode was focused onto the middle of the plate with the rotating mirror. The position variation of the reflected beam from the mirror rotation was then monitored by the PSPD. Finally, the PSPD measured the amplified displacement as opposed to the actual movement of the stage via an optical lever mechanism, providing the ability to more precisely control the nanoscale stage. The displacement amplification process was modeled by structural analysis. The simulation results of the amplification ratio showed that the distance variation between the PSPD and the mirror plate as well as the length L of the mirror plate could be used as the basic design parameters for a SDS nano-stage. The PSPD was originally designed for a total travel range of 30 to 60 mm, and the SDS nano-stage amplified that range by a factor of 15 to 25. Based on these results, a SDS nano-stage was fabricated using principle of displacement amplification.

Analysis of the Principle and Operation Characteristics of an (Igc-Free ELB) Operated by an Active Component (유효성분 동작형 누전차단기(Igc Free ELB)의 원리 및 동작 특성 해석)

  • Choi, Chung-Seog
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.4
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    • pp.456-461
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    • 2010
  • This study compares the criteria of earth leakage breakers (ELB) and analyzes the characteristics of an Igc-free ELB operated by an active component which is not misoperated by capacitive current. Even for the same ELB, the earth leakage current flowing through the human body is estimated to be differ greatly depending on the power source, voltage, location and status of contact, contact time duration, etc. Earth leakage breakers are classified based on the rated voltage, rated sensing current, rated operating time etc. Mounting and demounting of the existing equipment can be performed easily since an $I_{gc}$-free ELB is manufactured with the same structure as a conventional ELB. The rated operating current of a conventional and an $I_{gc}$-free ELB is 30mA, the sensing current is 25mA and the rated non-operating current is 15mA. In the analysis of non-operating current characteristics, the rated non-operating current of 15mA was satisfied up to a 20mA charging current in the conventional ELB, but does not satisfy the rated non-operating current as it operates when the resistive leakage current is lower than 15mA for a charging current exceeding 20mA. Also, the ELB is misoperated without a resistive leakage current when the charging current exceeded 25mA. However, the newly developed $I_{gc}$-free ELB satisfied the rated non-operating current even when the charging current was 60mA. Also, in comparison to the interrupting characteristics, it was confirmed that the charging current satisfying the rated non-operating current of the $I_{gc}$-free ELB was three times higher than that of the conventional ELB.