• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.99-103
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• 2007

ICP(Inductively Coupled Plasma)는 높은 밀도를 가지는 플라즈마 소스로서 반도체 산업에 널리 이용되고 있다. 하지만 기존의 ICP는 축전결합(capacitive coupling), 낮은 역률(power factor), 전송 선로의 영향 등의 결점을 가지고 있다. 이러한 문제점을 해결하기 위해 강자성체인 페라이트(ferrite)를 이용하여 측면형 페라이트 ICP 소스를 개발하게 하였다. 측면형 소스의 경우 플라즈마의 생성 부분이 측면에 위치하기 때문에 높은 압력에서 플라즈마 밀도 분포는 가운데가 낮고 측면이 높은 오목한 형태가 된다. 다양한 환경에서 플라즈마 밀도의 균일도를 제어하기 위해 이 논문에서는 측면형 페라이트 ICP 챔버 윗부분에 평면형의 나선형 안테나를 부착하여 그 효과를 알아보는 실험을 수행하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.478-478
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• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.