• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.144.2-144.2
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• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• 센서학회지
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• 제30권5호
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• 마이크로전자및패키징학회지
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• 제23권1호
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• pp.11-15
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• 2016

유기발광다이오드(orgianic light emitting diodes, OLEDs)는 대형 유연 디스플레이와 발광원으로서 사물인터넷 (IoT)의 하드웨어 기기 등 다양한 분야에서 연구가 진행되고 있다. 그러나 낮은 일함수의 금속 및 쉽게 반응하는 유기재료 자체의 특성으로 인하여 외부환경에 매우 취약한 단점을 가지고 있으며 특히, 수분과 산소에 민감하여 외부와의 접촉 시 성능이 급속도로 저하되는 현상을 나타내게 된다. 이를 방지하기 위해 PVD, CVD, ALD 와 같은 방법으로 보호막 형성 연구를 진행 중에 있지만 복잡한 공정 및 높은 비용의 문제점 등이 있다. 그러므로 외부 환경에 의한 성능 저하를 차단해주는 저렴하고 단순한 공정의 페시베이션(passivation) 박막 기술 개발이 매우 중요하다. 본 연구에서는 유기발광다이오드의 수명 향상을 위하여 스핀코팅(spin-coating) 방법으로 녹색 유기발광다이오드 소자 위에 조성비에 따른 페시베이션 박막을 형성한 후 녹색 유기발광다이오드의 휘도특성 변화를 조사하였다. 페시베이션 용액은 poly vinyl alcohol (PVA)를 기반으로 sodium alginate (SA)를 0, 10, 20, 40 wt%의 조성비로 제조하였으며, 40 wt%의 조성비에서 가장 좋은 배리어 보호 특성을 나타내었다. 최종적으로 PVA + SA 용액의 최적화된 페시베이션 보호막을 제작할 수 있었다.

• 한국산학기술학회논문지
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• 제17권9호
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• pp.502-507
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• 2016

이산화바나듐은 섭씨 68도에서 금속-절연체 상전이 특성을 나타내는 써모크로믹(thermochromic) 소재로서, 상전이 현상이 일어날 때 광학적, 전기적 성질이 급격히 변화하며, 이러한 상전이 현상은 가역적인 특성을 가지고 있다. 이산화바나듐의 금속-절연체 상전이 현상을 응용하기 위하여 상전이 온도를 상온 부근으로 낮추고자하는 많은 시도들이 있었으며, 직경 100 nm의 1차원 나노구조를 갖는 이산화바나듐 나노와이어의 경우 $29^{\circ}C$ 근처에서 상전이 현상이 일어남이 보고되었다. 본 연구에서는 기상 수송 방법(vapor transport method)을 사용하여 1차원 또는 2차원 나노구조를 갖는 이산화바나듐을 성장시켰다. 특히 동일한 성장 조건에서도 기판에 따라 다른 형태로 이산화바나듐이 성장하는 것을 확인하였다. 즉 Si 기판($Si{\setminus}SiO_2$(300 nm) 위에서는 1차원 나노와이어 형태의 이산화바나듐이 성장하였고, 그래핀 나노시트 위에서 합성된 이산화바나듐은 2차원 또는 3차원 나노구조를 가지고 성장하였다. 바나듐 옥사이드 나노구조체의 성장에 사용된 Si 웨이퍼 위에 박리-전사된 그래핀 나노시트 기판과 thermal CVD 시스템으로 성장된 1D 또는 2D & 3D 나노 구조를 갖는 $VO_2$의 결정학적 특성을 Raman 분광학으로 분석하였다. Raman 분석결과 성장된 바나듐 옥사이드는 $VO_2$ 상을 갖는 것을 확인하였다.

• 한국멀티미디어학회논문지
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• 제9권10호
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• pp.1282-1295
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• 2006

본 논문은 원 영상의 세부 묘사 유지를 위한 이미지 타일 모자이크 방법을 제안한다. 이 방법은 기존의 모자이크 방법들이 빈 공간 발생으로 인해 세부 묘사 표현의 어려움을 지니고 있는 점을 개선하였다. 이는 타일 내부의 세부 묘사를 위한 이미지 타일의 사용과 타일간의 빈 공간을 제거하기 위한 두 층의 타일 사용을 통해 구현된다. 본 논문에서 제시한 방법은 다음 세 단계로 구성된다. 첫째, 에지 회피 기법이 적용된 무게 중심 보로노이 다이어그램(CVD: Centroidal Voronoi Diagram)을 통해 위층 타일의 위치를 얻고, 딜로니 삼각형화(Delaunay Triangulation)를 이용해 아래층 타일의 위치를 계산한다. 둘째, 타일간의 관계와 에지를 고려해 타일의 크기와 방향 등의 속성을 설정한다. 셋째, 이미지 타일의 적용을 위해 포토 모자이크 기법을 사용한다. 이때, 다단계 인덱싱 기법을 통해 이미지 검객의 속도를 높인다. 위의 과정을 통해 기존의 방법들에 비해 타일 간의 빈공간이 최소화되고 타일 내부의 세부 묘사가 강화된 모자이크 영상을 얻는다.

• 한국표면공학회지
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• 제42권5호
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• pp.216-219
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• 2009

A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

• 대한간호학회지
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• 제35권8호
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• pp.1500-1507
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• 2005

Purpose. The purpose of this study was to identify subgroups of the physical and behavioral risk profiles for cardiovascular disease among industrial workers, and to examine predicting factors for the subgroups. Sample and Method. Health records of 2,616 male and female workers aged 19-56 years who were employed in an airplane manufacturing industry were analyzed. Data were analyzed using the Latent class cluster analysis. Results. Four different clusters (two high-risk groups, one low-risk group, and one normal group) were found and these clusters were significantly different by age, gender, and work type (p < .05 ). The two high-risk groups had higher chances of drinking alcohol, elevated BMI, FBS, total cholesterol, having hypertension, and were significantly older, and had relatively high chances of being day workers rather than other groups. The low-risk group had higher chances of drinking alcohol, higher BMI and total cholesterols compared to normal group, and highest portions of current smokers and shift workers in the four clusters and their mean BP was within prehypertension criteria. Conclusion. Industrial nurses should guide the lifestyle behaviors and risk factors of the high risk groups for CVD and need to intervene early for behavioral change for the low-risk group who are young and shift workers. Age, and work environment should be considered in planning for targeted preventive interventions for industrial workers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.190.1-190.1
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• 2015

Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.