• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 Proceedings of 6th International Joint Symposium on Microeletronics and Packaging
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• pp.49-56
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• 2001

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1533-1536
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• 2001

To grow the diamond films by using RF-MW two step process, at first, diamond seeds were deposited on silicon substrate by RF plasma CVD, and then a diamond layer grown by MW plasma CVD on the seeds. The grain-size of diamond films deposited by using RF-MW two step process was smaller and denser and also, crystallity of diamond film was better than those of the MW plasma CVD process. The deposited diamond films were analyzed by SEM(scanning electron microscophy), XRD (x-ray diffraction), and Raman spectroscopy.

• 한국세라믹학회지
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• 제27권4호
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• pp.513-520
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• 1990

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

• 한국재료학회지
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• 제5권6호
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• pp.732-742
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• 1995

다이아몬드 증착시 기판의 표면처리를 변화시켰을 때 다이아몬드의 핵생성 밀도에 미치는 영향에 대하여 연구하였다. 실험장치는 열 필라멘트 CVD 장치를 사용하였고, 반응가스로 메탄과 수소가스를 사용하였다. 기판의 표면 처리는 탄소 상을 기판에 증착시키는 방법, Soot에 의한 기판 표면처리, 혹연에 의한 기판 표면처리로 크게 3가지로 행하였다. 모든 경우에 핵생성 밀도가 증가하였으나 탄소 상을 증착시킨 경우와 soot에 의한 사전처리의 경우의 핵생성 밀도의 증가가 혹연에 의한 처리보다 더 현저하였다. 또한 탄소강의 증착의 경우 표면에 굴곡이 없는 매우 평탄하고 균일한 다이아몬드 막을 얻을 수 있었다. 사전증착처리 한 기판에 탄소 층을 형성시켰을 때 탄소 층과 기판과의 접착력이 약한 것을 이용하여 다이아몬드 막을 쉽게 분리시켜 free standing 다이아몬드 박막을 얻을 수 있음을 알았다.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.20-20
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• 2002

Based on experimental and theoretical analyses, we suggested a new possibility that the CVD diamond films grow not by the atomic unit but by the charged clusters containing a few hundreds of carbon atoms, which form spontaneously in the gas phase [J. Crysta] Growth 62 (1996) 55]. These hypothetical negatively-charged clusters were experimentally confirmed under a typical hot-filament diamond CVD process. Thin film growth by charged clusters or gas phase colloids of a few nanometers was also confirmed in Si and ZrO₂ CVD and appears to be general in many other CVD processes. Many puzzling phenomena in the CVD process such as selective deposition and nanowire growth could be explained by the deposition behavior of charged clusters. Charged clusters were shown to generate and contribute at least partially to the film deposition by thermal evaporation. Origin of charging at the relatively low temperature was explained by the surface ionization described by Saha-Langmuir equation. The hot surface with a high work function favors positive charging of clusters while that of a low work function favors negative charging.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2003년도 추계정기총회 및 국제심포지엄
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• pp.185-189
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• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• 한국결정성장학회지
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• 제8권2호
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• pp.240-248
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• 1998

화학기상증착 방법에 의한 다결정 다이아몬드 박막성장을 위한 공정가운데 가장 많이 사용되는 기법중의 하나가 바로 플라즈마에 의한 방법이다. 특히 플라즈마 화학기상증착(Plasma-Enhanced CVD)기술에 의한 다이아몬드 박막응용은 그 공정에 대한 세부 조정을 통하여 더욱 향상시킬 수 있다. 다이아몬드 박막증착의 경우 중요 변수들은 다이아몬드 필름이 증착되는 기판(substrate)의 온도, $CH_4/H_2$가스비율, 전체가스 압력 및 가스 excitation에너지 등이다. 분광 ellipsometry는 다이아몬드 필름 증착과 관련된 극단적인 환경에서도 물리적인 접촉이나 만들어지는 샘플의 손상없이도 필름자체의 여러 성질뿐만 아니라 기초 샘플의 온도까지도 결정할 수 있는 좋은 방법이다. 이러한 장점들을 이용하여 양질의 다이아몬드 박막을 성장시키기 위한 조건과 그에 따른 박막 특성을 얻기 위하여 분광 ellipsomerry의 사용과 해석이 소개된다. 그리고, 분광 ellipsometry를 이용, 플라즈마 화학기상증착 기술에 의하여 성장되는 다이아몬드 박막으로부터 나타나는 중요 변수들이 결정될 것이며 이러한 변수들은 필름의 두께, 필름에 포함되는 void 및 비다이아몬드의 체적비와, 그들의 시간에 따른 변화등을 포함한다. 그리고 샘플이 원하는 두께까지 성장된 후에 라만 분광기로 측정되어 다이아몬드 성분을 확인한다.

• 공업화학
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• 제1권1호
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• pp.11-22
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• 1990

다이아몬드가 준안정상태로 존재하는 조건(저압 및 저온) 하에서 화학증착시키는 방법이 80년대에 개발되어 새로운 다이아몬드 코팅기술로 등장하고 있다. 여기서는 여러가지 CVD 방법을 장단점과 함께 소개하였다. 다이아몬드 박막의 성장에 관련된 반응기구와 수소원자의 역할을 논하였으며, 또 장래의 연구분야와 응용을 전망하였다.

• 한국세라믹학회지
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• 제32권6호
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• pp.697-702
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• 1995

The rough growth surfaces of diamond films fabricated by the hot filament CVD were polished using thermomechanical polishing method. And then, its application to the optical windows was discussed through the measurement of transmittance in the range of infrared radiation and analysis of surfaces structure. The results were compaerd with those of the films polished with conventional mechanicla polishing. The transmittance of the mechanically polished film reached 57~66% over the whole range from 500 to 4000 cm-1. But the transmittance of the film polished with thermomechanical polishing method was reduced below 35%. This decrease in transmittance was due to both the graphitization of diamond on the polished surface and the growth of $\beta$-SiC at diamond/Si interface during polishing. The residual Fe in hte thermomechanically polished surface was confirmed by SIMS analysis. This Fe played the role of the graphitization of near surface region of the diamond film.