• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.343-348
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• 1999

The iron silicide films were prepared by chemical vapor deposition method using rf-plasma in variations of substrate temperature. rf-power, and ratio of $SiH_4$ and Fe-precursor. While iron silicide films are generally grown by ion beam synthesis (IBS) method of multi-step process, it is confirmed that iron silicide or $\beta$-phase consolidated $Fe_aSi_bC_cH_d$ was formed by one-step process in this study. The characteristics of films is variable because the different amounts of carbon and hydrogen was involved in the films as a function of dilute ratio of Fe-precursors and silane. It was shown that the different characteristics of films in carbon and hydrogen following the ratio of Fe-precursor and silane. The optical gap energy of films fabricated according to substrate temperature was invariant because active site brought in desorption of hydrogen was limiled. When rf-power was above 240 watt, the optical gap energy turned out to have high values because of dangling bonds increased by etching.

• Journal of the Korean Applied Science and Technology
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• v.21 no.4
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• pp.289-299
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• 2004

Multi-walled carbon nanotubes (CNTs) were prepared by microwave plasma chemical vapor deposition (MPCVD) using various combination of binary catalysts and methane precursor. The maximum yield (10.3 %) of CNTs was obtained using a methane-hydrogen-nitrogen mixture with volume ratio of 1:1:2 at 1000 W of microwave power. As the microwave power increased up to 1000 W, the deposition yield of CNTs raised from 4.1 % to 10. 3 %. However, the prepared CNTs at 800 W showed the more crystalline structure than those prepared at 1000 W. The prepared CNTs over different binary catalysts had various structural conformations such as aligned cylinder, bamboo, and nanofibers. The Id/Ig value of CNTs over$Fe-Fe/Al_2O_3, $Co-Co/Al_2O_3, and $Co-Cu/Al_2O_3 were in the range of 0.89${\sim}$0.93. Among the various binary catalysts used, $Fe-Co./Al_2O_3 showed the highest yield.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.148-156
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• 1993

TiN films were deposited onto high speed steel (SKH9) by plasma assisted chemical vapor deposition (PACVD) using a TiCl4/N2/H2/Ar gas mixture at around 50$0^{\circ}C$. The effects of the deposition temperature, R.F. power and TiCl4 concentration on the deposition of TiN and the microhardness of TiN film were investigated. The crystallinity and the microhardness of TiN films were improved with increase of the deposition temperature. Optimum deposition temperature in this study was 50$0^{\circ}C$, because a softening or phase transformation of the substrate occurred over 50$0^{\circ}C$. A large increase of the film growth rate with a strong(200) preferred orientation was obtained by increasing R.F. power. Much chlorine content of about 10at.% was found in the deposited films and resulted in relatively low average microhardness of about 1, 500Kgf/$\textrm{mm}^2$ compared with the theoretical value(~2, 000Kgf/$\textrm{mm}^2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• Journal of Powder Materials
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• v.12 no.2 s.49
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• pp.146-150
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• 2005

An optimum route to synthesize $Al_2O_3$-based composite powders with homogeneous dispersion of carbon nanotubes (CNTs) was investigated. CNTs/Metal/$Al_2O_3$ nanocomposite powders were fabricated by thermal chemical vapor deposition of $C_2H_2$ gas over metal/$Al_2O_3$ nanocomposite catalyst prepared by selective reduction of metal oxide/$Al_2O_3$ powders. The FT-Raman spectroscopy analysis revealed that the CNTs have single- and multi-walled structure. The CNTs with the diameter of 25-43 nm were homogeneously distributed in the metal/$Al_2O_3$ powders, and their characteristics were strongly affected by a kind of metal catalyst and catalyst size. The experimental results show that the composite powder with required size and dispersion of CNTs can be realized by control of synthesis condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.311-316
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• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• Journal of the Korean Chemical Society
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• v.60 no.5
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• pp.299-309
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• 2016

In this study, the physicochemical and electrochemical properties of carbon nanomaterials and synthesized nano-carbon/Si composites were studied. The nano-carbon/Si composites were ball-milled to a nano size and coated with pyrolytic carbon using Chemical Vapor Deposition (CVD). They were then finely mixed with respective nano-carbon materials. The physicochemical properties of samples were analyzed using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Raman spectroscopy, X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), and surface area analyzer. The electrochemical characteristics were investigated using the galvanostatic charge-discharge and cyclic voltammetry (CV) measurements. Three-electrode cells were fabricated using the carbon nanomaterials and nano-carbon/Si composites as anode materials and LiPF₆ and LiClO₄ as electrolytes of Li secondary batteries. Reversibility using LiClO₄ as an electrolyte was superior to that of LiPF₆ as the electrolyte. The initial discharge capacities of nano-carbon/Si composites were increased compared to the initial discharge capacities of nano-carbon materials.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.99-100
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• 2005

We have grown carbon nanotubes (CNTs) with a microwave plasma chemical vapor deposition (MPECVD) method, which has been regard as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. We use methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 60 nm thick Ni catalytic layer were deposited on the TiN coated glass substrate by RF magnetron sputtering method. In this work, we report the effects of pressure on the growth of CNTs. We have changed pressure of processing (10 $\sim$ 20 Torr) deposition of CNTs. SEM (Scanning electron microscopy) images show diameter, length and cross section state CNTs.